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This article is cited in 2 scientific papers (total in 2 papers)
Manufacturing, processing, testing of materials and structures
Raman spectra of thick epitaxial GaN layers formed on SiC by the sublimation sandwich method
A. N. Anisimova, A. A. Vol'fsona, E. N. Mokhovb a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Abstract:
The Raman spectra of thick ($\sim$100 $\mu$m and more) GaN layers grown on crystalline SiC substrates by the sublimation sandwich method are studied. Good agreement between the spectra of the SiC substrates used in the study and published data indicates that the measurements made in the study are reliable. The minimum difference between the results of the measurements and published evidence for GaN layers means that the layers grown by the sublimation sandwich method in the study compare well with those fabricated by the metalorganic vapor phase epitaxy (MOVPE) or chloride-hydride vapor phase epitaxy (CHVPE) techniques.
Keywords:
Sublimation Sandwich Method (SSM), Raman Spectra, Chloride Hydride Vapor Phase Epitaxy (CHVPE), Metalorganic Vapor Phase Epitaxy (MOVPE), Gallium Nitride.
Received: 15.02.2018 Accepted: 22.03.2018
Citation:
A. N. Anisimov, A. A. Vol'fson, E. N. Mokhov, “Raman spectra of thick epitaxial GaN layers formed on SiC by the sublimation sandwich method”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1104–1106; Semiconductors, 52:9 (2018), 1225–1227
Linking options:
https://www.mathnet.ru/eng/phts5746 https://www.mathnet.ru/eng/phts/v52/i9/p1104
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