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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2020, Volume 112, Issue 12, Pages 813–819
DOI: https://doi.org/10.31857/S1234567820240052
(Mi jetpl6325)
 

This article is cited in 4 scientific papers (total in 4 papers)

CONDENSED MATTER

High-temperature spin manipulation on color centers in rhombic silicon carbide polytype 21R-SiC

A. N. Anisimov, R. A. Babunts, I. D. Breev, V. A. Soltamov, E. N. Mokhov, P. G. Baranov

Ioffe Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia
References:
Abstract: A family of atomic-scale color centers, the spin state of which can be controlled via optical and microwave channels, has been found in the rhombic polytype of silicon carbide 21R-SiC considered as a natural superlattice. Zero-phonon lines are observed in photoluminescence corresponding to spin-3/2 centers, which differ in fine structure splitting in the ground and excited states. Giant changes in the photoluminescence intensity under conditions of magnetic resonance and anticrossing of the spin levels of the ground and excited states are demonstrated, which open up possibilities for applications in magnetometry, thermometry, and quantum computing.
Funding agency Grant number
Russian Science Foundation 20-12-00216
This work was supported by the Russian Science Foundation (project no. 20-12-00216).
Received: 03.11.2020
Revised: 10.11.2020
Accepted: 11.11.2020
English version:
Journal of Experimental and Theoretical Physics Letters, 2020, Volume 112, Issue 12, Pages 774–779
DOI: https://doi.org/10.1134/S0021364020240054
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. N. Anisimov, R. A. Babunts, I. D. Breev, V. A. Soltamov, E. N. Mokhov, P. G. Baranov, “High-temperature spin manipulation on color centers in rhombic silicon carbide polytype 21R-SiC”, Pis'ma v Zh. Èksper. Teoret. Fiz., 112:12 (2020), 813–819; JETP Letters, 112:12 (2020), 774–779
Citation in format AMSBIB
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\paper High-temperature spin manipulation on color centers in rhombic silicon carbide polytype 21R-SiC
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2020
\vol 112
\issue 12
\pages 813--819
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\jour JETP Letters
\yr 2020
\vol 112
\issue 12
\pages 774--779
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  • https://www.mathnet.ru/eng/jetpl/v112/i12/p813
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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