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Fizika Tverdogo Tela, 2018, Volume 60, Issue 4, Pages 641–659
DOI: https://doi.org/10.21883/FTT.2018.04.45670.211 (Mi ftt9224) 		 
This article is cited in 3 scientific papers (total in 3 papers)

Semiconductors

Group III acceptors with shallow and deep levels in silicon carbide: ESR and ENDOR studies

I. V. Il'in, Yu. A. Uspenskaya, D. D. Kramushchenko, M. V. Muzafarova, V. A. Soltamov, E. N. Mokhov, P. G. Baranov

Ioffe Institute, St. Petersburg
Full-text PDF (956 kB) Citations (3)
DOI: https://doi.org/10.21883/FTT.2018.04.45670.211
Abstract: Results of investigations of Group III acceptors (B, Al, and Ga) in crystals of silicon carbide using the most informative electron spin resonance and electron nuclear double resonance methods are presented. Structural models of the acceptors with shallow and deep levels are considered. In addition to the data obtained earlier, studies using high-frequency magnetic resonance were obtained, which allowed revealing orthorhombic deviations from the axial symmetry for the deep acceptors; theoretical analysis explains experimentally found shifts of g factors for the deep acceptors arising due to the orthorhombic deviations, which appear probably due to the Jahn–Teller effect.
Received: 30.06.2017
English version:
Physics of the Solid State, 2018, Volume 60, Issue 4, Pages 644–662
DOI: https://doi.org/10.1134/S1063783418040121
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. V. Il'in, Yu. A. Uspenskaya, D. D. Kramushchenko, M. V. Muzafarova, V. A. Soltamov, E. N. Mokhov, P. G. Baranov, “Group III acceptors with shallow and deep levels in silicon carbide: ESR and ENDOR studies”, Fizika Tverdogo Tela, 60:4 (2018), 641–659; Phys. Solid State, 60:4 (2018), 644–662
Citation in format AMSBIB
\Bibitem{IliUspKra18}
\by I.~V.~Il'in, Yu.~A.~Uspenskaya, D.~D.~Kramushchenko, M.~V.~Muzafarova, V.~A.~Soltamov, E.~N.~Mokhov, P.~G.~Baranov
\paper Group III acceptors with shallow and deep levels in silicon carbide: ESR and ENDOR studies
\jour Fizika Tverdogo Tela
\yr 2018
\vol 60
\issue 4
\pages 641--659
\mathnet{http://mi.mathnet.ru/ftt9224}
\crossref{https://doi.org/10.21883/FTT.2018.04.45670.211}
\elib{https://elibrary.ru/item.asp?id=32739833}
\transl
\jour Phys. Solid State
\yr 2018
\vol 60
\issue 4
\pages 644--662
\crossref{https://doi.org/10.1134/S1063783418040121}
Linking options:
  • https://www.mathnet.ru/eng/ftt9224
  • https://www.mathnet.ru/eng/ftt/v60/i4/p641
    • This publication is cited in the following 3 articles:
    1. Mokhov Evgeniy N, Baranov Pavel G, Kazarova Olga P, “Intrinsic defects in non-irradiated silicon carbide crystals”, Open Journal of Chemistry, 10:1 (2024), 004  crossref
    2. S. B. Orlinskii, V. A. Soltamov, G. V. Mamin, O. G. Poluektov, J. Schmidt, P. G. Baranov, “Probing Wave Functions of Electrically Active Shallow Level Defects by Means of High-Frequency Pulsed ENDOR in Wide Bandgap Materials: SiC, AlN, ZnO, and AgCl”, Appl Magn Reson, 53:3-5 (2022), 821  crossref
    3. Dariya Savchenko, Volodymyr Yukhymchuk, Mykola Skoryk, Evgeniy Ubyivovk, Evgenii Mokhov, Jan Lančok, Bela Shanina, Ekaterina Kalabukhova, “Magnetic Resonance Study of p‐Type 3C SiC Microparticles”, Physica Status Solidi (b), 257:12 (2020)  crossref
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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