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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 11, Pages 1593–1596
DOI: https://doi.org/10.21883/FTP.2019.11.48461.9171 (Mi phts5370) 		 
This article is cited in 11 scientific papers (total in 11 papers)

Manufacturing, processing, testing of materials and structures

Raman scattering in AlN crystals grown by sublimation on SiC и AlN seeds

I. D. Breeva, A. N. Anisimova, A. A. Vol'fsona, O. P. Kazarovaa, E. N. Mokhovb

a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Full-text PDF (136 kB) Citations (11)
DOI: https://doi.org/10.21883/FTP.2019.11.48461.9171
Abstract: The Raman-scattering technique is used to analyze the structural quality of bulk AlN crystals grown by sublimation on SiC and AlN seeds. Growth on SiC seeds is conducted with retention of the SiC seed during growth (type 1) and with total evaporation of the SiC seed (type 2). Growth on AlN seeds is conducted in tungsten containers with no graphite parts (type 3). According to the analysis of Raman spectra, the highest quality is inherent in type-3 crystals that exhibit minimal full widths at half maximum of Raman lines. The experimentally observed specific features are defined by differences in the mechanism of growth and by the content of dopant impurities in the crystals grown.
Keywords: AlN, sublimation sandwich method, Raman scattering.
Funding agency Grant number
Russian Foundation for Basic Research 19-02-00649-a
The study was supported by the Russian Foundation for Basic Research, project no. 19-02-00649-a.
Received: 28.05.2019
Revised: 03.06.2019
Accepted: 03.06.2019
English version:
Semiconductors, 2019, Volume 53, Issue 11, Pages 1558–1561
DOI: https://doi.org/10.1134/S1063782619110034
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. D. Breev, A. N. Anisimov, A. A. Vol'fson, O. P. Kazarova, E. N. Mokhov, “Raman scattering in AlN crystals grown by sublimation on SiC и AlN seeds”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1593–1596; Semiconductors, 53:11 (2019), 1558–1561
Citation in format AMSBIB
\Bibitem{BreAniVol19}
\by I.~D.~Breev, A.~N.~Anisimov, A.~A.~Vol'fson, O.~P.~Kazarova, E.~N.~Mokhov
\paper Raman scattering in AlN crystals grown by sublimation on SiC и AlN seeds
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 11
\pages 1593--1596
\mathnet{http://mi.mathnet.ru/phts5370}
\crossref{https://doi.org/10.21883/FTP.2019.11.48461.9171}
\elib{https://elibrary.ru/item.asp?id=41300665}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 11
\pages 1558--1561
\crossref{https://doi.org/10.1134/S1063782619110034}
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  • https://www.mathnet.ru/eng/phts/v53/i11/p1593
    • This publication is cited in the following 11 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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