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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2005, Volume 82, Issue 7, Pages 494–497
(Mi jetpl1581)
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This article is cited in 77 scientific papers (total in 77 papers)
CONDENSED MATTER
EPR identification of the triplet ground state and photoinduced population inversion for a Si-C divacancy in silicon carbide
P. G. Baranova, I. V. Il'ina, E. N. Mokhova, M. V. Muzafarovaa, S. B. Orlinskiib, J. Shmidtb a Ioffe Physico-Technical Institute, Russian Academy of Sciences
b Huygens Laboratory, Department of Physics, Leiden University, Leiden, The Netherlands
Abstract:
It is shown that intrinsic defects responsible for the semi-insulating properties of SiC represent Si-C divacancies in a neutral state (V Si-V C)0, which have the triplet ground state. The energy level scheme and the mechanism of creating the photoinduced population inversion of the triplet sublevels of the divacancy ground state are determined. It is concluded that there is a singlet excited state through which spin polarization is accomplished, and this fact opens the possibility of detecting magnetic resonance on single divacancies.
Received: 17.08.2005
Citation:
P. G. Baranov, I. V. Il'in, E. N. Mokhov, M. V. Muzafarova, S. B. Orlinskii, J. Shmidt, “EPR identification of the triplet ground state and photoinduced population inversion for a Si-C divacancy in silicon carbide”, Pis'ma v Zh. Èksper. Teoret. Fiz., 82:7 (2005), 494–497; JETP Letters, 82:7 (2005), 441–443
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https://www.mathnet.ru/eng/jetpl1581 https://www.mathnet.ru/eng/jetpl/v82/i7/p494
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Abstract page: | 374 | Full-text PDF : | 103 | References: | 36 |
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