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Publications in Math-Net.Ru |
Citations |
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2022 |
| 1. |
V. A. Zinovyev, A. F. Zinovieva, V. A. Volodin, A. K. Gutakovskii, A. S. Deryabin, A. Yu. Krupin, L. V. Kulik, V. D. Zhivulko, A. V. Mudryi, A. V. Dvurechenskii, “Synthesis of epitaxial structures with two-dimensional si layers embedded in a CaF$_2$ dielectric matrix”, Pis'ma v Zh. Èksper. Teoret. Fiz., 116:9 (2022), 608–613  ; JETP Letters, 116:9 (2022), 628–633 |
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2021 |
| 2. |
D. S. Abramkin, M. O. Petrushkov, E. A. Emelyanov, A. V. Nenashev, M. Yu. Yesin, A. V. Vasev, M. A. Putyato, D. B. Bogomolov, A. K. Gutakovskii, V. V. Preobrazhenskii, “Formation of InAs/GaP heterostructures with quantum wells on silicon substrates by molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 139–146  ; Semiconductors, 55:2 (2021), 194–201 |
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2019 |
| 3. |
Yu. B. Bolkhovityanov, A. K. Gutakovskii, A. S. Deryabin, L. V. Sokolov, “Forming dislocation pairs in the Ge/GeSi/Si(001) heterostructure”, Fizika Tverdogo Tela, 61:2 (2019), 284–287 ; Phys. Solid State, 61:2 (2019), 145–148 |
| 4. |
S. A. Batsanov, A. K. Gutakovsky, “Analysis of the properties of metal sulfide nanocrystals synthesized by the Langmuir—Blodgett technique”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:11 (2019), 734–738 ; JETP Letters, 109:11 (2019), 700–703   |
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| 5. |
A. F. Zinovieva, V. A. Zinovyev, N. P. Stepina, A. V. Katsyuba, A. V. Dvurechenskii, A. K. Gutakovskii, L. V. Kulik, A. S. Bogomyakov, S. B. Erenburg, S. V. Trubina, M. Voelskow, “Electron paramagnetic resonance in Ge/Si heterostructures with Mn-doped quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:4 (2019), 258–264 ; JETP Letters, 109:4 (2019), 270–275 |
| 6. |
T. V. Perevalov, V. A. Gritsenko, A. K. Gutakovskii, I. P. Prosvirin, “Structure of Hf$_{0.9}$La$_{0.1}$O$_2$ ferroelectric films obtained by the atomic layer deposition”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:2 (2019), 112–117 ; JETP Letters, 109:2 (2019), 116–120 |
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| 7. |
D. S. Abramkin, M. O. Petrushkov, M. A. Putyato, B. R. Semyagin, E. A. Emelyanov, V. V. Preobrazhenskii, A. K. Gutakovskii, T. S. Shamirzaev, “GaAs/GaP quantum-well heterostructures grown on Si substrates”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1167–1171 ; Semiconductors, 53:9 (2019), 1143–1147 |
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2018 |
| 8. |
D. S. Abramkin, A. K. Bakarov, A. K. Gutakovskii, T. S. Shamirzaev, “Spinodal decomposition in InSb/AlAs heterostructures”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1280–1285 ; Semiconductors, 52:11 (2018), 1392–1397 |
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2017 |
| 9. |
A. K. Gutakovskii, A. B. Talochkin, “Strain in ultrathin SiGeSn layers in a silicon matrix”, Pis'ma v Zh. Èksper. Teoret. Fiz., 106:12 (2017), 746–751 ; JETP Letters, 106:12 (2017), 780–784 |
| 10. |
D. V. Gulyaev, S. A. Batsanov, A. K. Gutakovskii, K. S. Zhuravlev, “Nature of luminescence of PbS quantum dots synthesized in a Langmuir–Blodgett matrix”, Pis'ma v Zh. Èksper. Teoret. Fiz., 106:1 (2017), 21–25 ; JETP Letters, 106:1 (2017), 18–22 |
| 11. |
A. K. Bakarov, A. K. Gutakovskii, K. S. Zhuravlev, A. P. Kovchavtsev, A. I. Toropov, I. D. Burlakov, K. O. Boltar, P. V. Vlasov, A. A. Lopukhin, “MBE-grown InSb photodetector arrays”, Zhurnal Tekhnicheskoi Fiziki, 87:6 (2017), 900–904 ; Tech. Phys., 62:6 (2017), 915–919 |
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| 12. |
D. S. Abramkin, A. K. Bakarov, M. A. Putyato, E. A. Emelyanov, D. A. Kolotovkina, A. K. Gutakovskii, T. S. Shamirzaev, “Formation of low-dimensional structures in the InSb/AlAs heterosystem”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1282–1288 ; Semiconductors, 51:9 (2017), 1233–1239 |
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2016 |
| 13. |
D. S. Abramkin, K. M. Rumynin, A. K. Bakarov, D. A. Kolotovkina, A. K. Gutakovskii, T. S. Shamirzaev, “Quantum dots formed in InSb/AlAs and AlSb/AlAs heterostructures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 103:11 (2016), 785–791 ; JETP Letters, 103:11 (2016), 692–698 |
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| 14. |
V. A. Timofeev, A. I. Nikiforov, A. R. Tuktamyshev, M. Yu. Yesin, V. I. Mashanov, A. K. Gutakovskii, N. A. Baidakova, “Strained multilayer structures with pseudomorphic GeSiSn layers”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1610–1614 ; Semiconductors, 50:12 (2016), 1584–1588 |
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2014 |
| 15. |
D. S. Abramkin, V. T. Shamirzaev, M. A. Putyato, A. K. Gutakovskii, T. S. Shamirzaev, “Coexistence of type-I and type-II band alignment in Ga(Sb,P)/GaP
heterostructures with pseudomorphic self-assembled quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 99:2 (2014), 81–86 ; JETP Letters, 99:2 (2014), 76–81 |
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2012 |
| 16. |
T. S. Shamirzaev, D. S. Abramkin, A. K. Gutakovskii, M. A. Putyato, “Novel self-assembled quantum dots in the GaSb/AlAs heterosystem”, Pis'ma v Zh. Èksper. Teoret. Fiz., 95:10 (2012), 601–603 ; JETP Letters, 95:10 (2012), 534–536 |
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2011 |
| 17. |
I. V. Sabinina, A. K. Gutakovskii, Yu. G. Sidorov, A. V. Latyshev, “Spontaneous composition modulation during Cd$_{x}$Hg$_{1-x}$Te(301) molecular beam epitaxy”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:4 (2011), 348–352 ; JETP Letters, 94:4 (2011), 324–328 |
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2010 |
| 18. |
S. A. Teys, E. M. Trukhanov, A. S. Il'in, A. K. Gutakovskii, A. V. Kolesnikov, “Initial stages of Ge epitaxy on Si(111) under quasi-equilibrium growth conditions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 92:6 (2010), 429–437 ; JETP Letters, 92:6 (2010), 388–395 |
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2005 |
| 19. |
I. V. Sabinina, A. K. Gutakovskii, Yu. G. Sidorov, M. V. Yakushev, V. S. Varavin, A. V. Latyshev, “Observation of antiphase domains in Cd<sub>x</sub>Hg<sub>1−<i>x</i></sub>Te films on silicon by the phase contrast method in atomic force microscopy”, Pis'ma v Zh. Èksper. Teoret. Fiz., 82:5 (2005), 326–330 ; JETP Letters, 82:5 (2005), 292–296 |
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| 20. |
S. S. Kosolobov, S. A. Song, L. I. Fedina, A. K. Gutakovskii, A. V. Latyshev, “Instability of the distribution of atomic steps on Si(111) upon submonolayer gold adsorption at high temperatures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:3 (2005), 149–153 ; JETP Letters, 81:3 (2005), 117–121 |
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| 21. |
D. D. Ri, V. G. Mansurov, A. Yu. Nikitin, A. K. Gutakovskii, K. S. Zhuravlev, P. Tronc, “Photoluminescence kinetics of wurtzite GaN quantum dots in an AlN matrix”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:2 (2005), 70–73 ; JETP Letters, 81:2 (2005), 62–65 |
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1989 |
| 22. |
S. A. Dvoretskii, V. I. Budamykh, A. K. Gutakovskii, V. Yu. Karasev, N. A. Kiselev, I. V. Sabinina, Yu. G. Sidorov, S. I. Stenin, “Twinning in $\mathrm{CdTe(111)}$ films on $\mathrm{GaAs(100)}$ substrates”, Dokl. Akad. Nauk SSSR, 304:3 (1989), 604–606 |
| 23. |
A. K. Gutakovskii, Yu. O. Kanter, V. Yu. Karasev, N. A. Kiselev, S. M. Pintus, S. V. Rubanov, S. I. Stenin, A. A. Fedorov, “Film and interface structure of $\mathrm{GaAs}$- and $\mathrm{InAs}$-based multilayered systems”, Dokl. Akad. Nauk SSSR, 304:2 (1989), 355–357 |
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