S. A. Teys, E. M. Trukhanov, A. S. Il'in, A. K. Gutakovskii, A. V. Kolesnikov, “Initial stages of Ge epitaxy on Si(111) under quasi-equilibrium growth conditions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 92:6 (2010), 429–437; JETP Letters, 92:6 (2010), 388

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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2010, Volume 92, Issue 6, Pages 429–437 (Mi jetpl1420)

This article is cited in 13 scientific papers (total in 13 papers)

CONDENSED MATTER

Initial stages of Ge epitaxy on Si(111) under quasi-equilibrium growth conditions

S. A. Teys, E. M. Trukhanov, A. S. Il'in, A. K. Gutakovskii, A. V. Kolesnikov

Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia

Full-text PDF (1201 kB) Citations (13)

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Received: 04.08.2010

English version:
Journal of Experimental and Theoretical Physics Letters, 2010, Volume 92, Issue 6, Pages 388–395
DOI: https://doi.org/10.1134/S0021364010180062

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Document Type: Article

Language: Russian

Citation: S. A. Teys, E. M. Trukhanov, A. S. Il'in, A. K. Gutakovskii, A. V. Kolesnikov, “Initial stages of Ge epitaxy on Si(111) under quasi-equilibrium growth conditions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 92:6 (2010), 429–437; JETP Letters, 92:6 (2010), 388–395

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This publication is cited in the following 13 articles:

Citing articles in Google Scholar: Russian citations, English citations
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Письма в Журнал экспериментальной и теоретической физики

Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki

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