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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2010, Volume 92, Issue 6, Pages 429–437 (Mi jetpl1420)  

This article is cited in 13 scientific papers (total in 13 papers)

CONDENSED MATTER

Initial stages of Ge epitaxy on Si(111) under quasi-equilibrium growth conditions

S. A. Teys, E. M. Trukhanov, A. S. Il'in, A. K. Gutakovskii, A. V. Kolesnikov

Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
References:
Received: 04.08.2010
English version:
Journal of Experimental and Theoretical Physics Letters, 2010, Volume 92, Issue 6, Pages 388–395
DOI: https://doi.org/10.1134/S0021364010180062
Bibliographic databases:
Document Type: Article
Language: Russian


Citation: S. A. Teys, E. M. Trukhanov, A. S. Il'in, A. K. Gutakovskii, A. V. Kolesnikov, “Initial stages of Ge epitaxy on Si(111) under quasi-equilibrium growth conditions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 92:6 (2010), 429–437; JETP Letters, 92:6 (2010), 388–395
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  • https://www.mathnet.ru/eng/jetpl1420
  • https://www.mathnet.ru/eng/jetpl/v92/i6/p429
  • This publication is cited in the following 13 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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