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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2010, Volume 92, Issue 6, Pages 429–437
(Mi jetpl1420)
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This article is cited in 13 scientific papers (total in 13 papers)
CONDENSED MATTER
Initial stages of Ge epitaxy on Si(111) under quasi-equilibrium growth conditions
S. A. Teys, E. M. Trukhanov, A. S. Il'in, A. K. Gutakovskii, A. V. Kolesnikov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Received: 04.08.2010
Citation:
S. A. Teys, E. M. Trukhanov, A. S. Il'in, A. K. Gutakovskii, A. V. Kolesnikov, “Initial stages of Ge epitaxy on Si(111) under quasi-equilibrium growth conditions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 92:6 (2010), 429–437; JETP Letters, 92:6 (2010), 388–395
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https://www.mathnet.ru/eng/jetpl1420 https://www.mathnet.ru/eng/jetpl/v92/i6/p429
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Abstract page: | 274 | Full-text PDF : | 71 | References: | 33 |
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