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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
B. A. Andreev, D. N. Lobanov, L. V. Krasil’nikova, K. E. Kudryavtsev, A. V. Novikov, P. A. Yunin, M. A. Kalinnikov, E. V. Skorokhodov, M. V. Shaleev, Z. F. Krasil'nik, “Features of the structural and optical properties of InGaN layers obtained by the MBE PA method with a pulsed supply of metal flows”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 766–772   |
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2020 |
| 2. |
L. A. Kushkov, V. V. Utochkin, V. Ya. Aleshkin, A. A. Dubinov, K. E. Kudryavtsev, V. I. Gavrilenko, N. S. Kulikov, M. A. Fadeev, V. V. Rumyantsev, N. N. Mikhailov, S. A. Dvoretskii, A. A. Razova, S. V. Morozov, “Investigation of stimulated emission from HgTe/CdHgTe quantum-well heterostructures in the 3–5 $\mu$m atmospheric transparency window”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1163–1168 ; Semiconductors, 54:10 (2020), 1365–1370 |
| 3. |
K. V. Marem'yanin, V. Parshin, E. A. Serov, V. V. Rumyantsev, K. E. Kudryavtsev, A. A. Dubinov, A. P. Fokin, S. S. Morozov, V. Ya. Aleshkin, M. Yu. Glyavin, G. G. Denisov, S. V. Morozov, “Investigation into microwave absorption in semiconductors for frequency-multiplication devices and radiation-output control of continuous and pulsed gyrotrons”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 878–883 ; Semiconductors, 54:9 (2020), 1069–1074 |
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2019 |
| 4. |
V. A. Solov'ev, M. Yu. Chernov, S. V. Morozov, K. E. Kudryavtsev, A. A. Sitnikova, S. V. Ivanov, “Stimulated emission at a wavelength of $2.86 \mu$m from In(Sb, As)/In(Ga, Al)As/GaAs metamorphic quantum wells under optical pumping”, Pis'ma v Zh. Èksper. Teoret. Fiz., 110:5 (2019), 297–302 ; JETP Letters, 110:5 (2019), 313–318   |
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| 5. |
V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Kruglov, D. G. Reunov, “Submonolayer InGaAs/GaAs quantum dots grown by MOCVD”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1159–1163 ; Semiconductors, 53:8 (2019), 1138–1142 |
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2018 |
| 6. |
N. V. Baidus, V. Ya. Aleshkin, A. A. Dubinov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, D. G. Reunov, M. V. Shaleev, P. A. Yunin, D. V. Yurasov, “On the application of strain-compensating GaAsP layers for the growth of InGaAs/GaAs quantum-well laser heterostructures emitting at wavelengths above 1100 nm on artificial Ge/Si substrates”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1443–1446 ; Semiconductors, 52:12 (2018), 1547–1550 |
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| 7. |
K. E. Kudryavtsev, A. A. Dubinov, V. Ya. Aleshkin, D. V. Yurasov, P. V. Gorlachuk, Yu. L. Ryaboshtan, A. A. Marmalyuk, A. V. Novikov, Z. F. Krasil'nik, “Stimulated emission in the 1.3–1.5 $\mu$m spectral range from AlGaInAs quantum wells in hybrid light-emitting III–V heterostructures on silicon substrates”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1384–1389 ; Semiconductors, 52:11 (2018), 1495–1499 |
| 8. |
A. V. Novikov, D. V. Yurasov, E. E. Morozova, E. V. Skorokhodov, V. A. Verbus, A. N. Yablonskii, N. A. Baidakova, N. S. Gusev, K. E. Kudryavtsev, A. V. Nezhdanov, A. I. Mashin, “Formation and properties of locally tensile strained Ge microstructures for silicon photonics”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1331–1336 ; Semiconductors, 52:11 (2018), 1442–1447 |
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| 9. |
I. V. Shtrom, N. G. Filosofov, V. F. Agekyan, M. B. Smirnov, A. Yu. Serov, R. R. Reznik, K. E. Kudryavtsev, G. E. Cirlin, “Optical properties of GaN nanowires grown by MBE on SiC/Si(111) hybrid substrate”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 509 ; Semiconductors, 52:5 (2018), 602–604 |
| 10. |
V. Ya. Aleshkin, N. V. Baidus, O. V. Vikhrova, A. A. Dubinov, B. N. Zvonkov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, I. V. Samartsev, D. V. Yurasov, “Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018), 67–74 ; Tech. Phys. Lett., 44:8 (2018), 735–738 |
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2017 |
| 11. |
N. V. Baidus, V. Ya. Aleshkin, A. A. Dubinov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, A. V. Rykov, A. A. Sushkov, M. V. Shaleev, P. A. Yunin, D. V. Yurasov, A. N. Yablonskii, Z. F. Krasil'nik, “Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1579–1582 ; Semiconductors, 51:11 (2017), 1527–1530 |
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| 12. |
V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, I. V. Samartsev, A. G. Fefelov, D. V. Yurasov, Z. F. Krasil'nik, “Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1530–1533 ; Semiconductors, 51:11 (2017), 1477–1480 |
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2016 |
| 13. |
V. V. Rumyantsev, M. A. Fadeev, S. V. Morozov, A. A. Dubinov, K. E. Kudryavtsev, A. M. Kadykov, I. V. Tuzov, S. A. Dvoretskii, N. N. Mikhailov, V. I. Gavrilenko, F. Teppe, “Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1679–1684 ; Semiconductors, 50:12 (2016), 1651–1656 |
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| 14. |
V. Ya. Aleshkin, A. A. Dubinov, K. E. Kudryavtsev, P. A. Yunin, M. N. Drozdov, O. V. Vikhrova, S. M. Nekorkin, B. N. Zvonkov, “Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 596–599 ; Semiconductors, 50:5 (2016), 586–589 |
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2014 |
| 15. |
K. E. Kudryavtsev, D. I. Kryzhkov, L. V. Krasil’nikova, D. V. Shengurov, V. B. Shmagin, B. A. Andreev, Z. F. Krasil'nik, “Absorption cross section for the $^4I_{15/2}\to^4I_{13/2}$ transition of Er$^{3+}$ in Si:Er:O/SOI epitaxial layers”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014), 913–918 ; JETP Letters, 100:12 (2014), 807–811 |
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| 16. |
V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, S. A. Denisov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. A. Matveev, S. M. Nekorkin, V. G. Shengurov, “Stimulated emission from an InGaAs/GaAs/AlGaAs heterostructure grown on a Si substrate”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014), 900–903 ; JETP Letters, 100:12 (2014), 795–797 |
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2013 |
| 17. |
V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, B. N. Zvonkov, M. V. Karzanova, K. E. Kudryavtsev, S. M. Nekorkin, A. N. Yablonskii, “Guiding effect of quantum wells in semiconductor lasers”, Kvantovaya Elektronika, 43:5 (2013), 401–406 [Quantum Electron., 43:5 (2013), 401–406 ] |
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2008 |
| 18. |
V. Ya. Aleshkin, A. A. Antonov, S. V. Gaponov, A. A. Dubinov, Z. F. Krasil'nik, K. E. Kudryavtsev, A. G. Spivakov, A. N. Yablonskii, “Tunable source of terahertz radiation based on the difference-frequency generation in a GaP crystal”, Pis'ma v Zh. Èksper. Teoret. Fiz., 88:12 (2008), 905–907 ; JETP Letters, 88:12 (2008), 787–789 |
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