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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 8, Pages 1159–1163
DOI: https://doi.org/10.21883/FTP.2019.08.48011.9124 (Mi phts5445) 		 
This article is cited in 6 scientific papers (total in 6 papers)

Manufacturing, processing, testing of materials and structures

Submonolayer InGaAs/GaAs quantum dots grown by MOCVD

V. Ya. Aleshkina, N. V. Baidusb, A. A. Dubinova, K. E. Kudryavtseva, S. M. Nekorkinb, A. V. Kruglovb, D. G. Reunovb

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b National Research Lobachevsky State University of Nizhny Novgorod
Full-text PDF (1219 kB) Citations (6)
DOI: https://doi.org/10.21883/FTP.2019.08.48011.9124
Abstract: The mode of the growth of InGaAs quantum dots by MOS-hydride epitaxy on GaAs substrates without a deviation and with a deviation of 2$^{\circ}$ is selected for laser structures emitting at wavelengths above 1.2 $\mu$m at room temperature. As a result, a quantum-dot density of 4 $\times$ 10$^{10}$ cm$^{-2}$ is achieved. Stimulated emission is observed in laser structures with seven layers of quantum dots at a wavelength of 1.06 $\mu$m at liquid-nitrogen temperature. The threshold power density of optical pumping is about 5 kW/cm$^2$.
Keywords: quantum dots, MOS-hydride epitaxy, GaAs/InGaAs.
Funding agency Grant number
Russian Foundation for Basic Research 18-29-20016
Ministry of Education and Science of the Russian Federation 0035-2019-0020-С-01
This work was partially supported by the Russian Foundation for Basic Research, project no. 18-29-20016, and within the framework of the state task of the Institute for Physics of Microstructures, Russian Academy of Sciences, for 2019 (no. 0035-2019-0020-С-01).
Received: 01.04.2019
Revised: 11.04.2019
Accepted: 11.04.2019
English version:
Semiconductors, 2019, Volume 53, Issue 8, Pages 1138–1142
DOI: https://doi.org/10.1134/S1063782619080037
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Kruglov, D. G. Reunov, “Submonolayer InGaAs/GaAs quantum dots grown by MOCVD”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1159–1163; Semiconductors, 53:8 (2019), 1138–1142
Citation in format AMSBIB
\Bibitem{AleBaiDub19}
\by V.~Ya.~Aleshkin, N.~V.~Baidus, A.~A.~Dubinov, K.~E.~Kudryavtsev, S.~M.~Nekorkin, A.~V.~Kruglov, D.~G.~Reunov
\paper Submonolayer InGaAs/GaAs quantum dots grown by MOCVD
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 8
\pages 1159--1163
\mathnet{http://mi.mathnet.ru/phts5445}
\crossref{https://doi.org/10.21883/FTP.2019.08.48011.9124}
\elib{https://elibrary.ru/item.asp?id=41129850}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 8
\pages 1138--1142
\crossref{https://doi.org/10.1134/S1063782619080037}
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    • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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