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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
R. V. Levin, A. S. Vlasov, B. V. Pushnii, “Silicon-doped GaSb grown by MOVPE in a wide range of the V/III ratio”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 932–936   ; Semiconductors, 55:11 (2021), 850–854 |
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2020 |
| 2. |
R. V. Levin, I. V. Fedorov, A. S. Vlasov, P. N. Brunkov, B. V. Pushnii, “Smoothing the surface of gallium antimonide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020), 48–50 ; Tech. Phys. Lett., 46:12 (2020), 1203–1205 |
| 3. |
G. S. Gagis, V. I. Vasil’ev, R. V. Levin, A. E. Marichev, B. V. Pushnii, V. I. Kuchinskii, D. Yu. Kazantsev, B. Ya. Ber, “Investigation of the effect of doping on transition layers of anisotype GaInAsP and InP heterostructures obtained by the method of MOCVD”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020), 22–24 ; Tech. Phys. Lett., 46:10 (2020), 961–963 |
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2019 |
| 4. |
R. V. Levin, B. V. Pushnii, I. V. Fedorov, A. A. Usikova, V. N. Nevedomskiy, N. L. Bazhenov, K. J. Mynbaev, N. V. Pavlov, G. G. Zegrya, “Examination of the capabilities of metalorganic vapor-phase epitaxy in fabrication of thin InAs/GaSb layers”, Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019), 1592–1597 ; Tech. Phys., 64:10 (2019), 1509–1514 |
| 5. |
R. V. Levin, A. S. Vlasov, A. N. Smirnov, B. V. Pushnii, “High-resistivity gallium antimonide produced by metal–organic vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1599–1603 ; Semiconductors, 53:12 (2019), 1563–1567 |
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| 6. |
G. S. Gagis, R. V. Levin, A. E. Marichev, B. V. Pushnii, M. P. Scheglov, B. Ya. Ber, D. Yu. Kazantsev, Yu. A. Kudriavtsev, A. S. Vlasov, T. B. Popova, D. V. Chistyakov, V. I. Kuchinskii, V. I. Vasil’ev, “Investigation of composition uniformity on thickness of GaInAsP layers grown on InP substrates by vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1512–1518 ; Semiconductors, 53:11 (2019), 1472–1478 |
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| 7. |
R. V. Levin, V. N. Nevedomskiy, N. L. Bazhenov, G. G. Zegrya, B. V. Pushnii, M. N. Mizerov, “On the possibility of manufacturing strained InAs/GaSb superlattices by the mocvd method”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 273–276 ; Semiconductors, 53:2 (2019), 260–263 |
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| 8. |
M. P. Mikhailova, E. V. Ivanov, L. V. Danilov, R. V. Levin, I. A. Andreev, E. V. Kunitsyna, Yu. P. Yakovlev, “Electroluminescence in $n$-GaSb/InAs/$p$-GaSb heterostructures with a single quantum well grown by MOVPE”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 50–54 ; Semiconductors, 53:1 (2019), 46–50 |
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| 9. |
G. S. Gagis, A. S. Vlasov, R. V. Levin, A. E. Marichev, M. P. Scheglov, T. B. Popova, B. Ya. Ber, D. Yu. Kazantsev, D. V. Chistyakov, V. I. Kuchinskii, V. I. Vasil’ev, “Luminescence properties of GaInAsP layers with graded composition–depth profiles grown on InP substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019), 22–25 ; Tech. Phys. Lett., 45:10 (2019), 1031–1034 |
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2018 |
| 10. |
V. P. Khvostikov, S. V. Sorokina, N. S. Potapovich, R. V. Levin, A. E. Marichev, N. Kh. Timoshina, B. V. Pushnii, “GaInAsP/InP-based laser power converters ($\lambda$ = 1064 nm)”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1641–1646 ; Semiconductors, 52:13 (2018), 1748–1753 |
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| 11. |
M. P. Mikhailova, I. A. Andreev, G. G. Konovalov, L. V. Danilov, E. V. Ivanov, E. V. Kunitsyna, N. D. Il'inskaya, R. V. Levin, B. V. Pushnii, Yu. P. Yakovlev, “Photoconductivity amplification in a type-II $n$-GaSb/InAs/$p$-GaSb heterostructure with a single QW”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 906–911 ; Semiconductors, 52:8 (2018), 1037–1042 |
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| 12. |
R. V. Levin, A. E. Marichev, E. V. Kontrosh, N. D. Prasolov, V. S. Kalinovskii, B. V. Pushnii, “Manufacture and study of switch $p$–$n$-junctions for cascade photovoltaic cells”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018), 25–31 ; Tech. Phys. Lett., 44:12 (2018), 1130–1132 |
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| 13. |
V. I. Vasil’ev, G. S. Gagis, R. V. Levin, A. E. Marichev, B. V. Pushnii, M. P. Scheglov, V. I. Kuchinskii, B. Ya. Ber, D. Yu. Kazantsev, A. N. Gorokhov, T. B. Popova, “A study of the composition gradient of GaInAsP layers formed on InP by vapor-phase epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018), 17–24 ; Tech. Phys. Lett., 44:12 (2018), 1127–1129 |
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2017 |
| 14. |
V. I. Vasil’ev, G. S. Gagis, R. V. Levin, V. I. Kuchinskii, A. G. Deryagin, D. Yu. Kazantsev, B. Ya. Ber, “A study of transition regions in InAsPSb/InAs heterostructures grown by MOVPE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017), 78–86 ; Tech. Phys. Lett., 43:10 (2017), 905–908 |
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| 15. |
A. E. Marichev, R. V. Levin, A. B. Gordeeva, G. S. Gagis, V. I. Kuchinskii, B. V. Pushnii, N. D. Prasolov, N. M. Shmidt, “Stress relaxation in InGaAsP/InP heterostructures for 1064-nm laser radiation converters”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:2 (2017), 3–9 ; Tech. Phys. Lett., 43:1 (2017), 88–91 |
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2016 |
| 16. |
V. P. Khvostikov, S. V. Sorokina, O. A. Khvostikova, R. V. Levin, B. V. Pushnii, N. Kh. Timoshina, V. M. Andreev, “GaSb laser-power ($\lambda$ = 1550 nm) converters: Fabrication method and characteristics”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1358–1362 ; Semiconductors, 50:10 (2016), 1338–1343 |
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| 17. |
R. V. Levin, V. N. Nevedomskiy, B. V. Pushnii, N. A. Bert, M. N. Mizerov, “InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:2 (2016), 79–84 ; Tech. Phys. Lett., 42:1 (2016), 96–98 |
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2018 |
| 18. |
L. V. Danilov, M. P. Mikhailova, R. V. Levin, G. G. Konovalov, E. V. Ivanov, I. A. Andreev, B. V. Pushnyi, G. G. Zegrya, “Enhancement of photoconductivity by carrier screening effect in $n$-GaSb/$n$-InAs/$p$-GaSb heterostructure with single deep quantum well”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 476 ; Semiconductors, 52:4 (2018), 493–496 |
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