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This article is cited in 1 scientific paper (total in 1 paper)
Investigation of the effect of doping on transition layers of anisotype GaInAsP and InP heterostructures obtained by the method of MOCVD
G. S. Gagisa, V. I. Vasil’eva, R. V. Levina, A. E. Maricheva, B. V. Pushniia, V. I. Kuchinskiiab, D. Yu. Kazantseva, B. Ya. Bera a Ioffe Institute, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
Abstract:
When studying doped anisotypic heterostructures with Ga$_{1-x}$In$_{x}$As$_{y}$P$_{1-y}$ layers grown on InP substrates with an InP buffer layer by metal organic chemical vapor deposition, the presence of transition regions is revealed in the Ga$_{1-x}$In$_{x}$As$_{y}$P$_{1-y}$ layer from the side of the substrate in some of the samples, along which the arsenic content $(y)$ increases from the interface with the InP layer to the surface of the structure by a $\Delta y$ value of up to 0.15, while the content of elements of the third group $(x)$ remains constant.
Keywords:
metal organic chemical vapor deposition, heterostructures, photovoltaic converter, doping, homogeneity.
Received: 10.06.2020 Revised: 30.06.2020 Accepted: 30.06.2020
Citation:
G. S. Gagis, V. I. Vasil'ev, R. V. Levin, A. E. Marichev, B. V. Pushnii, V. I. Kuchinskii, D. Yu. Kazantsev, B. Ya. Ber, “Investigation of the effect of doping on transition layers of anisotype GaInAsP and InP heterostructures obtained by the method of MOCVD”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020), 22–24; Tech. Phys. Lett., 46:10 (2020), 961–963
Linking options:
https://www.mathnet.ru/eng/pjtf4975 https://www.mathnet.ru/eng/pjtf/v46/i19/p22
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