Pisma v Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Pisma v Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 19, Pages 22–24
DOI: https://doi.org/10.21883/PJTF.2020.19.50039.18419
(Mi pjtf4975)
 

This article is cited in 1 scientific paper (total in 1 paper)

Investigation of the effect of doping on transition layers of anisotype GaInAsP and InP heterostructures obtained by the method of MOCVD

G. S. Gagisa, V. I. Vasil’eva, R. V. Levina, A. E. Maricheva, B. V. Pushniia, V. I. Kuchinskiiab, D. Yu. Kazantseva, B. Ya. Bera

a Ioffe Institute, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
Full-text PDF (123 kB) Citations (1)
Abstract: When studying doped anisotypic heterostructures with Ga$_{1-x}$In$_{x}$As$_{y}$P$_{1-y}$ layers grown on InP substrates with an InP buffer layer by metal organic chemical vapor deposition, the presence of transition regions is revealed in the Ga$_{1-x}$In$_{x}$As$_{y}$P$_{1-y}$ layer from the side of the substrate in some of the samples, along which the arsenic content $(y)$ increases from the interface with the InP layer to the surface of the structure by a $\Delta y$ value of up to 0.15, while the content of elements of the third group $(x)$ remains constant.
Keywords: metal organic chemical vapor deposition, heterostructures, photovoltaic converter, doping, homogeneity.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation RFMEFI62119X0021
Studies by the method of secondary ion mass spectrometry were carried out using the equipment of Materials Science and Diagnostics in Advanced Technologies Center for Collective Use (Ioffe Physical Technical Institute, Russian Academy of Sciences) supported by the Ministry of Science and Higher Education of the Russian Federation (unique project identification code RFMEFI62119X0021).
Received: 10.06.2020
Revised: 30.06.2020
Accepted: 30.06.2020
English version:
Technical Physics Letters, 2020, Volume 46, Issue 10, Pages 961–963
DOI: https://doi.org/10.1134/S1063785020100053
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: G. S. Gagis, V. I. Vasil'ev, R. V. Levin, A. E. Marichev, B. V. Pushnii, V. I. Kuchinskii, D. Yu. Kazantsev, B. Ya. Ber, “Investigation of the effect of doping on transition layers of anisotype GaInAsP and InP heterostructures obtained by the method of MOCVD”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020), 22–24; Tech. Phys. Lett., 46:10 (2020), 961–963
Citation in format AMSBIB
\Bibitem{GagVasLev20}
\by G.~S.~Gagis, V.~I.~Vasil'ev, R.~V.~Levin, A.~E.~Marichev, B.~V.~Pushnii, V.~I.~Kuchinskii, D.~Yu.~Kazantsev, B.~Ya.~Ber
\paper Investigation of the effect of doping on transition layers of anisotype GaInAsP and InP heterostructures obtained by the method of MOCVD
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 46
\issue 19
\pages 22--24
\mathnet{http://mi.mathnet.ru/pjtf4975}
\crossref{https://doi.org/10.21883/PJTF.2020.19.50039.18419}
\elib{https://elibrary.ru/item.asp?id=44257983}
\transl
\jour Tech. Phys. Lett.
\yr 2020
\vol 46
\issue 10
\pages 961--963
\crossref{https://doi.org/10.1134/S1063785020100053}
Linking options:
  • https://www.mathnet.ru/eng/pjtf4975
  • https://www.mathnet.ru/eng/pjtf/v46/i19/p22
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
    Statistics & downloads:
    Abstract page:59
    Full-text PDF :15
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024