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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 12, Pages 1599–1603
DOI: https://doi.org/10.21883/FTP.2019.12.48609.9208 (Mi phts5317) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Non-electronic properties of semiconductors (atomic structure, diffusion)

High-resistivity gallium antimonide produced by metal–organic vapor-phase epitaxy

R. V. Levin, A. S. Vlasov, A. N. Smirnov, B. V. Pushnii

Ioffe Institute, St. Petersburg
Full-text PDF (160 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2019.12.48609.9208
Abstract: The results of studies of nominally undoped epitaxial $p$-GaSb layers grown by metal–organic vapor-phase epitaxy at a ratio TMSb/TEGa in the range from 1 to 50 are reported. At the ratio TMSb/TEGa = 50, GaSb epitaxial layers, whose resistivity is 400 $\Omega$ cm, are produced. It is shown that, for such layers, the crystal quality assessed by several methods remains comparable to the quality of $n$-GaSb substrates used for the growth of nominally undoped GaSb layers.
Keywords: vapor phase epitaxy, substrate, high-resistance gallium antimonide, crystalline perfection.
Received: 10.07.2019
Revised: 15.07.2019
Accepted: 15.07.2019
English version:
Semiconductors, 2019, Volume 53, Issue 12, Pages 1563–1567
DOI: https://doi.org/10.1134/S1063782619160152
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. V. Levin, A. S. Vlasov, A. N. Smirnov, B. V. Pushnii, “High-resistivity gallium antimonide produced by metal–organic vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1599–1603; Semiconductors, 53:12 (2019), 1563–1567
Citation in format AMSBIB
\Bibitem{LevVlaSmi19}
\by R.~V.~Levin, A.~S.~Vlasov, A.~N.~Smirnov, B.~V.~Pushnii
\paper High-resistivity gallium antimonide produced by metal–organic vapor-phase epitaxy
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 12
\pages 1599--1603
\mathnet{http://mi.mathnet.ru/phts5317}
\crossref{https://doi.org/10.21883/FTP.2019.12.48609.9208}
\elib{https://elibrary.ru/item.asp?id=41848176}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 12
\pages 1563--1567
\crossref{https://doi.org/10.1134/S1063782619160152}
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  • https://www.mathnet.ru/eng/phts/v53/i12/p1599
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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