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This article is cited in 1 scientific paper (total in 1 paper)
Non-electronic properties of semiconductors (atomic structure, diffusion)
High-resistivity gallium antimonide produced by metal–organic vapor-phase epitaxy
R. V. Levin, A. S. Vlasov, A. N. Smirnov, B. V. Pushnii Ioffe Institute, St. Petersburg
Abstract:
The results of studies of nominally undoped epitaxial $p$-GaSb layers grown by metal–organic vapor-phase epitaxy at a ratio TMSb/TEGa in the range from 1 to 50 are reported. At the ratio TMSb/TEGa = 50, GaSb epitaxial layers, whose resistivity is 400 $\Omega$ cm, are produced. It is shown that, for such layers, the crystal quality assessed by several methods remains comparable to the quality of $n$-GaSb substrates used for the growth of nominally undoped GaSb layers.
Keywords:
vapor phase epitaxy, substrate, high-resistance gallium antimonide, crystalline perfection.
Received: 10.07.2019 Revised: 15.07.2019 Accepted: 15.07.2019
Citation:
R. V. Levin, A. S. Vlasov, A. N. Smirnov, B. V. Pushnii, “High-resistivity gallium antimonide produced by metal–organic vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1599–1603; Semiconductors, 53:12 (2019), 1563–1567
Linking options:
https://www.mathnet.ru/eng/phts5317 https://www.mathnet.ru/eng/phts/v53/i12/p1599
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