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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 10, Pages 1358–1362
(Mi phts6339)
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This article is cited in 9 scientific papers (total in 9 papers)
Semiconductor physics
GaSb laser-power ($\lambda$ = 1550 nm) converters: Fabrication method and characteristics
V. P. Khvostikov, S. V. Sorokina, O. A. Khvostikova, R. V. Levin, B. V. Pushnii, N. Kh. Timoshina, V. M. Andreev Ioffe Institute, St. Petersburg
Abstract:
Photovoltaic converters of laser light with a wavelength of $\lambda$ = 1550 nm are developed using liquidphase epitaxy (LPE), metal-organic chemical-vapor deposition (MOCVD), and diffusion from the gas phase into the $n$-GaSb substrate. Photocells with an area of S of 4, 12.2, and 100 mm$^2$ are fabricated and tested. The characteristics of the samples produced by different methods are compared. The monochromatic efficiency is found to be 38.7% for the best converters (with $S$ = 12.2 mm$^2$) at a laser power of 1.4 W.
Received: 17.02.2016 Accepted: 25.02.2016
Citation:
V. P. Khvostikov, S. V. Sorokina, O. A. Khvostikova, R. V. Levin, B. V. Pushnii, N. Kh. Timoshina, V. M. Andreev, “GaSb laser-power ($\lambda$ = 1550 nm) converters: Fabrication method and characteristics”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1358–1362; Semiconductors, 50:10 (2016), 1338–1343
Linking options:
https://www.mathnet.ru/eng/phts6339 https://www.mathnet.ru/eng/phts/v50/i10/p1358
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Abstract page: | 48 | Full-text PDF : | 31 |
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