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This article is cited in 10 scientific papers (total in 10 papers)
Semiconductor physics
GaInAsP/InP-based laser power converters ($\lambda$ = 1064 nm)
V. P. Khvostikov, S. V. Sorokina, N. S. Potapovich, R. V. Levin, A. E. Marichev, N. Kh. Timoshina, B. V. Pushnii Ioffe Institute, St. Petersburg
Abstract:
Photovoltaic laser-power converters with irradiation of the substrate side are developed based on lattice-matched GaInAs/InP heterostructures formed by metal-organic vapor-phase epitaxy. Variants of antireflection coatings with a reflection minimum at a wavelength of $\lambda$ = 1064 nm as well as features of chip bonding using soldering pastes with different melting points are considered. The efficiency of 34.5% (1.2 W, $\lambda$ =1064 nm) is achieved for the converters with the area of 3.5 $\times$ 3.5 mm$^2$ at uniform radiation conditions.
Received: 05.06.2018 Accepted: 13.06.2018
Citation:
V. P. Khvostikov, S. V. Sorokina, N. S. Potapovich, R. V. Levin, A. E. Marichev, N. Kh. Timoshina, B. V. Pushnii, “GaInAsP/InP-based laser power converters ($\lambda$ = 1064 nm)”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1641–1646; Semiconductors, 52:13 (2018), 1748–1753
Linking options:
https://www.mathnet.ru/eng/phts5642 https://www.mathnet.ru/eng/phts/v52/i13/p1641
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Abstract page: | 38 | Full-text PDF : | 15 |
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