GaInAsP/InP-based laser power converters ($\lambda$ = 1064 nm)

Photovoltaic laser-power converters with irradiation of the substrate side are developed based on lattice-matched GaInAs/InP heterostructures formed by metal-organic vapor-phase epitaxy. Variants of antireflection coatings with a reflection minimum at a wavelength of $\lambda$ = 1064 nm as well as features of chip bonding using soldering pastes with different melting points are considered. The efficiency of 34.5% (1.2 W, $\lambda$ =1064 nm) is achieved for the converters with the area of 3.5 $\times$ 3.5 mm$^2$ at uniform radiation conditions.