Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 4, Page 476 (Mi phts5872)  
This article is cited in 1 scientific paper (total in 1 paper)

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Quantum wells, Quantum wires, Quantum dots, band structure

Enhancement of photoconductivity by carrier screening effect in $n$-GaSb/$n$-InAs/$p$-GaSb heterostructure with single deep quantum well

L. V. Danilov, M. P. Mikhailova, R. V. Levin, G. G. Konovalov, E. V. Ivanov, I. A. Andreev, B. V. Pushnyi, G. G. Zegrya

Ioffe Institute, 194021 St. Petersburg, Russia
Full-text PDF (24 kB) Citations (1)
Abstract: $n$-GaSb/$n$-InAs/$p$-GaSb heterostructure with a single InAs QW was grown for the first time by MOVPE. Photocurrent spectra were obtained at reverse bias in the range from 0 to 0.8 V. It was shown that the photocurrent increases nonlinearly. The maximum of differential photoconductivity is archived at low applied voltage up to 0.2 V. This effect was explained by electrostatic screening of electrons localized in QW.
Funding agency Grant number
Russian Foundation for Basic Research 16-08-01130
15-02-03151
This work was partially supported by grants RFBR № 16-08-01130 and 15-02-03151.
English version:
Semiconductors, 2018, Volume 52, Issue 4, Pages 493–496
DOI: https://doi.org/10.1134/S1063782618040115
Bibliographic databases:
Document Type: Article
Language: English
Citation: L. V. Danilov, M. P. Mikhailova, R. V. Levin, G. G. Konovalov, E. V. Ivanov, I. A. Andreev, B. V. Pushnyi, G. G. Zegrya, “Enhancement of photoconductivity by carrier screening effect in $n$-GaSb/$n$-InAs/$p$-GaSb heterostructure with single deep quantum well”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 476; Semiconductors, 52:4 (2018), 493–496
Citation in format AMSBIB
\Bibitem{DanMikLev18}
\by L.~V.~Danilov, M.~P.~Mikhailova, R.~V.~Levin, G.~G.~Konovalov, E.~V.~Ivanov, I.~A.~Andreev, B.~V.~Pushnyi, G.~G.~Zegrya
\paper Enhancement of photoconductivity by carrier screening effect in $n$-GaSb/$n$-InAs/$p$-GaSb heterostructure with single deep quantum well
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 4
\pages 476
\mathnet{http://mi.mathnet.ru/phts5872}
\elib{https://elibrary.ru/item.asp?id=32740471}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 4
\pages 493--496
\crossref{https://doi.org/10.1134/S1063782618040115}
Linking options:
  • https://www.mathnet.ru/eng/phts5872
  • https://www.mathnet.ru/eng/phts/v52/i4/p476
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:41
    Full-text PDF :13
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024