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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 20, Pages 22–25
DOI: https://doi.org/10.21883/PJTF.2019.20.48388.17954 (Mi pjtf5290) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Luminescence properties of GaInAsP layers with graded composition–depth profiles grown on InP substrates

G. S. Gagisab, A. S. Vlasova, R. V. Levina, A. E. Maricheva, M. P. Scheglova, T. B. Popovaa, B. Ya. Bera, D. Yu. Kazantseva, D. V. Chistyakovc, V. I. Kuchinskiiab, V. I. Vasil’evab

a Ioffe Institute, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Full-text PDF (124 kB) Citations (1)
DOI: https://doi.org/10.21883/PJTF.2019.20.48388.17954
Abstract: Luminescence properties of epilayers of Ga$_{1-x}$In$_{x}$As$_{y}$P$_{1-y}$ (GaInAsP) solid solutions with graded content of Group V elements ($\Delta y$ up to 0.08 over a total thickness of about 1 $\mu$m) were studied at 77 and 300 K. The photoluminescence (PL) spectra of GaInAsP epilayers with large $\Delta y$ values were broadened. The GaInAsP epilayers of low crystalline perfection exhibited either no PL emission or showed PL spectra characteristic of transitions involving impurity energy levels.
Keywords: photoluminescence, solid solutions, heterostructures, photovoltaic converters.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation RFMEFI62117X0018
SIMS and SEM studies and measurements on the Camebax microanalyzer were carried out using instruments of the Center of Multi-User Scientific Equipment “Materials Science and Diagnostics for Advanced Technologies”, (Ioffe Institute) and supported by the Ministry of Education and Science of the Russian Federation, project no. ID RFMEFI62117X0018.
Received: 28.06.2019
Revised: 28.06.2019
Accepted: 01.07.2019
English version:
Technical Physics Letters, 2019, Volume 45, Issue 10, Pages 1031–1034
DOI: https://doi.org/10.1134/S1063785019100213
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: G. S. Gagis, A. S. Vlasov, R. V. Levin, A. E. Marichev, M. P. Scheglov, T. B. Popova, B. Ya. Ber, D. Yu. Kazantsev, D. V. Chistyakov, V. I. Kuchinskii, V. I. Vasil'ev, “Luminescence properties of GaInAsP layers with graded composition–depth profiles grown on InP substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019), 22–25; Tech. Phys. Lett., 45:10 (2019), 1031–1034
Citation in format AMSBIB
\Bibitem{GagVlaLev19}
\by G.~S.~Gagis, A.~S.~Vlasov, R.~V.~Levin, A.~E.~Marichev, M.~P.~Scheglov, T.~B.~Popova, B.~Ya.~Ber, D.~Yu.~Kazantsev, D.~V.~Chistyakov, V.~I.~Kuchinskii, V.~I.~Vasil'ev
\paper Luminescence properties of GaInAsP layers with graded composition--depth profiles grown on InP substrates
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 20
\pages 22--25
\mathnet{http://mi.mathnet.ru/pjtf5290}
\crossref{https://doi.org/10.21883/PJTF.2019.20.48388.17954}
\elib{https://elibrary.ru/item.asp?id=41300903}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 10
\pages 1031--1034
\crossref{https://doi.org/10.1134/S1063785019100213}
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