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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
E. A. Tarasova, S. V. Khazanova, O. L. Golikov, A. S. Puzanov, S. V. Obolensky, V. E. Zemlyakov, “Analysis of the effect of spacer layers on nonlinear distortions of the current–voltage characteristics of GaAlAs/InGaAs pHEMTs”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 872–876   ; Semiconductors, 55:12 (2021), 895–898 |
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| 2. |
E. V. Volkova, A. B. Loginov, B. A. Loginov, E. A. Tarasova, A. S. Puzanov, S. A. Korolev, E. S. Semyonovykh, S. V. Khazanova, S. V. Obolensky, “Experimental studies of modification of the characteristics of GaAs structures with Schottky contacts after exposure to fast neutrons”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 846–849 ; Semiconductors, 55:12 (2021), 903–906 |
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| 3. |
A. S. Puzanov, V. V. Bibikova, I. Yu. Zabavichev, E. S. Obolenskaya, A. A. Potekhin, E. A. Tarasova, N. V. Vostokov, V. A. Kozlov, S. V. Obolensky, “Modeling the response of a microwave low-barrier uncooled Mott diode to the action of heavy ions of outer space and femtosecond laser pulses”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 743–747 ; Semiconductors, 55:10 (2021), 780–784 |
| 4. |
A. S. Puzanov, V. V. Bibikova, I. Yu. Zabavichev, E. S. Obolenskaya, E. A. Tarasova, N. V. Vostokov, S. V. Obolensky, “Simulation of the response of a low-barrier Mott diode to the influence of heavy charged particles from outer space”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021), 51–54 ; Tech. Phys. Lett., 47:4 (2021), 305–308 |
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| 5. |
S. V. Obolensky, E. V. Volkova, A. B. Loginov, B. A. Loginov, E. A. Tarasova, A. S. Puzanov, S. A. Korolev, “A comprehensive study of radiation defect clusters in GaAs structures after neutron irradiation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:5 (2021), 38–41 ; Tech. Phys. Lett., 47:3 (2021), 248–251 |
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2020 |
| 6. |
E. A. Tarasova, S. V. Obolensky, S. V. Khazanova, N. N. Grigoryeva, O. L. Golikov, A. B. Ivanov, A. S. Puzanov, “Compensation for the nonlinearity of the drain–gate I–V characteristic in field-effect transistors with a gate length of $\sim$100 nm”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 968–973 ; Semiconductors, 54:9 (2020), 1155–1160 |
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| 7. |
I. Yu. Zabavichev, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Impact of the potential of scattering at radiation-induced defects on carrier transport in GaAs structures”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 945–951 ; Semiconductors, 54:9 (2020), 1134–1140 |
| 8. |
A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “On heating and relaxation of the electron–hole-gas energy in the track of a primary recoil atom”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 791–795 ; Semiconductors, 54:8 (2020), 946–950 |
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2019 |
| 9. |
T. A. Shobolova, A. V. Korotkov, E. V. Petryakova, A. V. Lipatnikov, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Comparison of the radiation resistance of prospective bipolar and heterobipolar transistors”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1391–1394 ; Semiconductors, 53:10 (2019), 1353–1356 |
| 10. |
I. Yu. Zabavichev, A. A. Potekhin, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Simulation of the formation of a cascade of displacements and transient ionization processes in silicon semiconductor structures under neutron exposure”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1279–1284 ; Semiconductors, 53:9 (2019), 1249–1254 |
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| 11. |
A. S. Puzanov, M. M. Venediktov, S. V. Obolensky, V. A. Kozlov, “Computational and experimental simulation of static memory cells of submicron microcircuits under the effect of neutron fluxes”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1250–1256 ; Semiconductors, 53:9 (2019), 1222–1228 |
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2018 |
| 12. |
A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Application of the locally nonequilibrium diffusion-drift Cattaneo–Vernotte model to the calculation of photocurrent relaxation in diode structures under subpicosecond pulses of ionizing radiation”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1295–1299 ; Semiconductors, 52:11 (2018), 1407–1411 |
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2017 |
| 13. |
I. Yu. Zabavichev, A. A. Potekhin, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1520–1524 ; Semiconductors, 51:11 (2017), 1466–1471 |
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| 14. |
I. Yu. Zabavichev, E. S. Obolenskaya, A. A. Potekhin, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1489–1492 ; Semiconductors, 51:11 (2017), 1435–1438 |
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2016 |
| 15. |
A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1706–1712 ; Semiconductors, 50:12 (2016), 1678–1683 |
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