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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
N. D. Prasolov, A. A. Gutkin, P. N. Brunkov, “Molecular dynamics study of dimer formation on GaAs (001) surface at low temperatures”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 134–137   ; Semiconductors, 55:2 (2021), 175–178 |
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2020 |
| 2. |
A. A. Nastulyavichus, S. I. Kudryashov, N. A. Smirnov, R. A. Khmelnitskii, A. A. Rudenko, N. N. Mel'nik, D. A. Kirilenko, P. N. Brunkov, A. A. Ionin, “Laser formation of colloidal sulfur- and carbon-doped silicon nanoparticles”, Optics and Spectroscopy, 128:7 (2020), 897–901 ; Optics and Spectroscopy, 128:7 (2020), 885–896 |
| 3. |
A. V. Babichev, S. A. Kadinskaya, K. Yu. Shubina, A. A. Vasil'ev, A. A. Blokhin, È. I. Moiseev, S. A. Blokhin, I. S. Mukhin, I. A. Eliseyev, V. Yu. Davydov, P. N. Brunkov, N. V. Kryzhanovskaya, A. Yu. Egorov, “A study of the photoresponse in graphene produced by chemical vapor deposition”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 833–840 ; Semiconductors, 54:9 (2020), 991–998 |
| 4. |
A. V. Sakharov, V. V. Lundin, E. E. Zavarin, S. O. Usov, P. N. Brunkov, A. F. Tsatsul'nikov, “The influence of reactor pressure on the properties of GaN layers grown by MOVPE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020), 3–6 ; Tech. Phys. Lett., 46:12 (2020), 1211–1214 |
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| 5. |
R. V. Levin, I. V. Fedorov, A. S. Vlasov, P. N. Brunkov, B. V. Pushnii, “Smoothing the surface of gallium antimonide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020), 48–50 ; Tech. Phys. Lett., 46:12 (2020), 1203–1205 |
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2019 |
| 6. |
V. Yu. Davydov, V. N. Jmerik, E. M. Roginskii, Yu. E. Kitaev, Y. M. Beltukov, M. B. Smirnov, D. V. Nechaev, A. N. Smirnov, I. A. Eliseyev, P. N. Brunkov, S. V. Ivanov, “Boson peak related to Ga-nanoclusters in AlGaN layers grown by plasma-assisted molecular beam epitaxy at Ga-rich conditions”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1519 ; Semiconductors, 53:11 (2019), 1479–1488 |
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| 7. |
N. D. Prasolov, A. A. Gutkin, P. N. Brunkov, “Molecular dynamic modelling of low temperature reconstruction of GaAs (001) surface during nanoindentation process”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1424–1426 ; Semiconductors, 53:10 (2019), 1386–1388 |
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| 8. |
N. D. Prasolov, A. A. Gutkin, P. N. Brunkov, “Моделирование с помощью молекулярной динамики низкотемпературной реконструкции поверхности (001) GaAs в процессе наноиндентирования”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1164 |
| 9. |
V. V. Lundin, A. V. Sakharov, E. E. Zavarin, D. A. Zakgeim, E. Yu. Lundina, P. N. Brunkov, A. F. Tsatsul'nikov, “Insulating GaN epilayers co-doped with iron and carbon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 36–39 ; Tech. Phys. Lett., 45:7 (2019), 723–726 |
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2018 |
| 10. |
A. N. Semenov, D. V. Nechaev, S. I. Troshkov, A. V. Nashchekin, P. N. Brunkov, V. N. Zhmerik, S. V. Ivanov, “Features of the selective growth of GaN nanorods on patterned $c$-sapphire substrates of various configurations”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1663–1667 ; Semiconductors, 52:13 (2018), 1770–1774 |
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| 11. |
E. A. Evropeytsev, A. N. Semenov, D. V. Nechaev, V. N. Zhmerik, V. Kh. Kaibyshev, S. I. Troshkov, P. N. Brunkov, A. A. Usikova, S. V. Ivanov, A. A. Toropov, “Metal-semiconductor nanoheterostructures with an AlGaN quantum well and in-situ formed surface Al nanoislands”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 515 ; Semiconductors, 52:5 (2018), 622–624 |
| 12. |
D. V. Lebedev, N. A. Kalyuzhnyy, S. A. Mintairov, K. G. Belyaev, M. V. Rakhlin, A. A. Toropov, P. N. Brunkov, A. S. Vlasov, J. Merz, S. Rouvimov, S. Oktyabrsky, M. Yakimov, I. V. Mukhin, A. V. Shelaev, V. A. Bykov, A. Yu. Romanova, P. A. Buryak, A. M. Mintairov, “Density control of InP/GaInP quantum dots grown by metal-organic vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 477 ; Semiconductors, 52:4 (2018), 497–501 |
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| 13. |
V. A. Solov'ev, M. Yu. Chernov, A. A. Sitnikova, P. N. Brunkov, B. Ya. Mel'tser, S. V. Ivanov, “Optimization of the structural properties and surface morphology of a convex-graded In$_{x}$Al$_{1-x}$As ($x$ = 0.05–0.83) metamorphic buffer layer grown via MBE on GaAs (001)”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 127–132 ; Semiconductors, 52:1 (2018), 120–125 |
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| 14. |
V. V. Lundin, A. V. Sakharov, E. E. Zavarin, D. A. Zakgeim, A. E. Nikolaev, P. N. Brunkov, M. A. Yagovkina, A. F. Tsatsul'nikov, “The effect of the method by which a high-resistivity GaN buffer layer is formed on properties of InAlN/GaN and AlGaN/GaN heterostructures with 2D electron gas”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018), 51–58 ; Tech. Phys. Lett., 44:7 (2018), 577–580 |
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| 15. |
E. V. Balashova, B. B. Krichevtsov, S. N. Popov, P. N. Brunkov, G. A. Pankova, A. A. Zolotarev, “Elastic and piezoelectric parameters of the crystals of histidine phosphite $L$-Hist $\cdot$ H$_{3}$РО$_{3}$ measured by the method of electromechanical resonance”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:3 (2018), 69–78 ; Tech. Phys. Lett., 44:2 (2018), 118–122 |
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2017 |
| 16. |
D. V. Nechaev, A. A. Sitnikova, P. N. Brunkov, S. V. Ivanov, V. N. Zhmerik, “Stress generation and relaxation in (Al, Ga)N/6$H$-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:9 (2017), 67–74 ; Tech. Phys. Lett., 43:5 (2017), 443–446 |
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2016 |
| 17. |
A. V. Voronin, A. E. Aleksandrov, B. Ya. Ber, P. N. Brunkov, A. A. Bormatov, V. K. Gusev, E. V. Demina, A. N. Novokhatskii, S. I. Pavlov, M. D. Prusakova, G. Yu. Sotnikova, M. A. Yagovkina, “Experimental study of cyclic action of plasma on tungsten”, Zhurnal Tekhnicheskoi Fiziki, 86:3 (2016), 51–57 ; Tech. Phys., 61:3 (2016), 370–376 |
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| 18. |
V. I. Nikolaev, A. I. Pechnikov, S. I. Stepanov, Sh. Sh. Sharofidinov, A. A. Golovatenko, I. P. Nikitina, A. N. Smirnov, V. E. Bugrov, A. E. Romanov, P. N. Brunkov, D. A. Kirilenko, “Chloride epitaxy of $\beta$-Ga$_{2}$O$_{3}$ layers grown on $c$-sapphire substrates”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 997–1000 ; Semiconductors, 50:7 (2016), 980–983 |
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| 19. |
S. A. Blokhin, M. A. Bobrov, A. G. Kuz'menkov, A. A. Blokhin, A. P. Vasil'ev, Yu. A. Guseva, M. M. Kulagina, I. O. Karpovskii, Yu. M. Zadiranov, S. I. Troshkov, N. D. Prasolov, P. N. Brunkov, V. S. Levitskii, V. Lisak, N. A. Maleev, V. M. Ustinov, “A study of distributed dielectric Bragg reflectors for vertically emitting lasers of the near-IR range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016), 57–65 ; Tech. Phys. Lett., 42:10 (2016), 1049–1053 |
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| 20. |
V. V. Lundin, E. E. Zavarin, P. N. Brunkov, M. A. Yagovkina, A. V. Sakharov, M. A. Sinicin, B. Ya. Ber, D. Yu. Kazantsev, A. F. Tsatsul'nikov, “Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016), 85–91 ; Tech. Phys. Lett., 42:5 (2016), 539–542 |
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| 21. |
V. V. Lundin, E. E. Zavarin, P. N. Brunkov, M. A. Yagovkina, S. I. Troshkov, A. V. Sakharov, A. E. Nikolaev, A. F. Tsatsul'nikov, “The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016), 86–93 ; Tech. Phys. Lett., 42:4 (2016), 431–434 |
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2021 |
| 22. |
A. M. Sergeev, Yu. Yu. Balega, I. A. Shcherbakov, E. B. Aleksandrov, V. M. Andreev, A. L. Aseev, A. M. Bykov, I. V. Grekhov, V. V. Gusarov, A. V. Dvurechenskii, A. V. Ivanchik, E. L. Ivchenko, N. N. Kazansky, A. A. Kaplyanskii, V. V. Kveder, N. N. Kolachevsky, S. G. Konnikov, P. S. Kop'ev, Z. F. Krasil'nik, A. G. Litvak, S. V. Medvedev, Yu. V. Natochin, V. N. Parmon, E. E. Son, R. A. Suris, V. B. Timofeev, V. V. Ustinov, V. M. Ustinov, S. V. Ivanov, A. N. Aleshin, M. V. Arkhipov, P. N. Brunkov, A. I. Veinger, A. K. Vershovskii, E. A. Volkova, S. A. Gurevich, V. K. Gusev, V. A. Dergachev, A. G. Deryagin, O. V. Dudnik, V. V. Zhdanov, N. L. Istomina, A. M. Kalashnikova, E. S. Kornilova, E. V. Kustova, A.A. Lebedev, E.V. Lipatova, A. V. Nashchekin, R. V. Parfen'ev, M. P. Petrov, G. V. Skornyakov, E. M. Smirnov, G. S. Sokolovskii, A. V. Solomonov, M. G. Sushkova, E. I. Terukov, E. A. Chaban, O. L. Chagunava, A. P. Shergin, E. V. Shestopalova, M. L. Shmatov, A. A. Shmidt, V. L. Shubin, “Андрей Георгиевич Забродский, к 75-летию со дня рождения”, Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021), 893–894 |
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