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This article is cited in 3 scientific papers (total in 3 papers)
Surface, interfaces, thin films
Molecular dynamic modelling of low temperature reconstruction of GaAs (001) surface during nanoindentation process
N. D. Prasolova, A. A. Gutkinb, P. N. Brunkovab a St. Petersburg National Research University of Information Technologies, Mechanics and Optics
b Ioffe Institute, St. Petersburg
Abstract:
Using molecular dynamic technique modelling of nanoindentation of GaAs (001) surface terminated with As atoms to the depth up to 1 nm in the range of temperatures from 1 K to 15 K was carried out. It was shown that it results in to the reconstruction of a surface with formation of stable As dimers (1 $\times$ 2), which do not disappear after withdraw of the indenter from the surface.
Keywords:
nanoindentation, surface reconstruction, As dimers, molecular dynamics.
Received: 25.03.2019 Revised: 27.03.2019 Accepted: 18.04.2019
Citation:
N. D. Prasolov, A. A. Gutkin, P. N. Brunkov, “Molecular dynamic modelling of low temperature reconstruction of GaAs (001) surface during nanoindentation process”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1424–1426; Semiconductors, 53:10 (2019), 1386–1388
Linking options:
https://www.mathnet.ru/eng/phts5390 https://www.mathnet.ru/eng/phts/v53/i10/p1424
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