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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 10, Pages 1424–1426
DOI: https://doi.org/10.21883/FTP.2019.10.48301.9114 (Mi phts5390) 		 
This article is cited in 3 scientific papers (total in 3 papers)

Surface, interfaces, thin films

Molecular dynamic modelling of low temperature reconstruction of GaAs (001) surface during nanoindentation process

N. D. Prasolova, A. A. Gutkinb, P. N. Brunkovab

a St. Petersburg National Research University of Information Technologies, Mechanics and Optics
b Ioffe Institute, St. Petersburg
Full-text PDF (622 kB) Citations (3)
DOI: https://doi.org/10.21883/FTP.2019.10.48301.9114
Abstract: Using molecular dynamic technique modelling of nanoindentation of GaAs (001) surface terminated with As atoms to the depth up to 1 nm in the range of temperatures from 1 K to 15 K was carried out. It was shown that it results in to the reconstruction of a surface with formation of stable As dimers (1 $\times$ 2), which do not disappear after withdraw of the indenter from the surface.
Keywords: nanoindentation, surface reconstruction, As dimers, molecular dynamics.
Received: 25.03.2019
Revised: 27.03.2019
Accepted: 18.04.2019
English version:
Semiconductors, 2019, Volume 53, Issue 10, Pages 1386–1388
DOI: https://doi.org/10.1134/S1063782619100166
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. D. Prasolov, A. A. Gutkin, P. N. Brunkov, “Molecular dynamic modelling of low temperature reconstruction of GaAs (001) surface during nanoindentation process”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1424–1426; Semiconductors, 53:10 (2019), 1386–1388
Citation in format AMSBIB
\Bibitem{PraGutBru19}
\by N.~D.~Prasolov, A.~A.~Gutkin, P.~N.~Brunkov
\paper Molecular dynamic modelling of low temperature reconstruction of GaAs (001) surface during nanoindentation process
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 10
\pages 1424--1426
\mathnet{http://mi.mathnet.ru/phts5390}
\crossref{https://doi.org/10.21883/FTP.2019.10.48301.9114}
\elib{https://elibrary.ru/item.asp?id=41174898}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 10
\pages 1386--1388
\crossref{https://doi.org/10.1134/S1063782619100166}
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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