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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
E. V. Ivanova, P. A. Dementev, M. V. Zamoryanskaya, D. A. Zakgeim, D. Yu. Panov, V. A. Spiridonov, A. V. Kremleva, M. A. Odnoblyudov, D. A. Bauman, A. E. Romanov, V. E. Bugrov, “Study of charge carrier traps in bulk crystal gallium oxide $\beta$-Ga$_{2}$O$_{3}$”, Fizika Tverdogo Tela, 63:4 (2021), 421–426   ; Phys. Solid State, 63:4 (2021), 544–549 |
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| 2. |
V. A. Kravez, E. V. Ivanova, M. A. Yagovkina, M. V. Zamoryanskaya, “Low-temperature synthesis of glass-ceramics with YNbO$_{4}$ : Tb$^{3+}$ crystallites”, Optics and Spectroscopy, 129:11 (2021), 1417–1423 ; Optics and Spectroscopy, 130:14 (2022), 2127–2133 |
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| 3. |
V. A. Kravez, E. V. Ivanova, K. N. Orekhova, G. A. Gusev, V. V. Vaskevich, M. I. Moskvichev, M. V. Zamoryanskaya, “Low-temperature synthesis of glass ceramics containing YNbO$_{4}$ : Eu$^{3+}$ crystallites”, Optics and Spectroscopy, 129:2 (2021), 207–213 ; Optics and Spectroscopy, 129:2 (2021), 245–251 |
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2020 |
| 4. |
P. A. Dementev, E. V. Ivanova, M. N. Lapushkin, D. A. Smirnov, S. N. Timoshnev, “Electronic structure of an ultrathin molybdenum oxide film”, Fizika Tverdogo Tela, 62:10 (2020), 1618–1626 ; Phys. Solid State, 62:10 (2020), 1787–1795 |
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| 5. |
P. A. Dementev, E. V. Ivanova, M. N. Lapushkin, D. A. Smirnov, S. N. Timoshnev, “Gold nanoparticles adsorbed on tungsten: effect of sodium atom deposition and heating”, Fizika Tverdogo Tela, 62:8 (2020), 1171–1178 ; Phys. Solid State, 62:8 (2020), 1317–1324 |
| 6. |
E. V. Ivanova, S. M. Masloboeva, V. A. Kravez, K. N. Orekhova, G. A. Gusev, A. N. Trofimov, O. B. Shcherbina, M. A. Yagovkina, A. A. Averin, M. V. Zamoryanskaya, “Synthesis and luminescent properties of gadolinium tantalum niobates Gd(Nb$_{0.9}$Ta$_{0.1})$O$_{4}$”, Optics and Spectroscopy, 128:2 (2020), 228 ; Optics and Spectroscopy, 127:6 (2019), 1011–1017 |
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| 7. |
P. A. Dementev, E. V. Ivanova, M. N. Lapushkin, D. A. Smirnov, S. N. Timoshnev, “Electronic structure of molybdenum oxide oxidized at different pressures”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1395 ; Semiconductors, 54:12 (2020), 1698–1701 |
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| 8. |
E. V. Kalinina, A. A. Katashev, G. N. Violina, A. M. Strel'chuk, I. P. Nikitina, E. V. Ivanova, V. V. Zabrodskii, “Structural, electrical, and optical properties of 4$H$-SiC for ultraviolet photodetectors”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1368–1373 ; Semiconductors, 54:12 (2020), 1628–1633 |
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| 9. |
E. V. Kalinina, M. F. Kudoyarov, I. P. Nikitina, E. V. Ivanova, V. V. Zabrodskii, “Structural and optical characteristics of 4$H$-SiC UV detectors irradiated with argon ions”, Fizika i Tekhnika Poluprovodnikov, 54:11 (2020), 1244–1248 ; Semiconductors, 54:11 (2020), 1478–1482 |
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| 10. |
E. V. Kalinina, G. N. Violina, I. P. Nikitina, E. V. Ivanova, V. V. Zabrodskii, M. Z. Shvarts, S. A. Levina, A. V. Nikolaev, “Effect of temperature on the characteristics of 4$H$-SiC UV photodetectors”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 195–201 ; Semiconductors, 54:2 (2020), 246–252 |
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2019 |
| 11. |
P. A. Dementev, E. V. Ivanova, M. N. Lapushkin, D. A. Smirnov, S. N. Timoshnev, “Electronic structure of molybdenum oxidized in air”, Fizika Tverdogo Tela, 61:11 (2019), 2024–2029 ; Phys. Solid State, 61:11 (2019), 1993–1998 |
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| 12. |
P. A. Dementev, E. V. Ivanova, M. V. Zamoryanskaya, “Traps in the nanocomposite layer of silicon-silicon dioxide and their influence on the luminescent properties”, Fizika Tverdogo Tela, 61:8 (2019), 1448–1454 ; Phys. Solid State, 61:8 (2019), 1394–1400 |
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| 13. |
K. N. Orekhova, Yu. M. Serov, P. A. Dementev, E. V. Ivanova, V. A. Kravez, V. P. Usacheva, M. V. Zamoryanskaya, “Investigation of a contamination film formed by the electron beam irradiation”, Zhurnal Tekhnicheskoi Fiziki, 89:9 (2019), 1412–1419 ; Tech. Phys., 64:9 (2019), 1336–1342 |
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| 14. |
E. V. Kalinina, G. N. Violina, I. P. Nikitina, M. A. Yagovkina, E. V. Ivanova, V. V. Zabrodskii, “Proton irradiation of 4$H$-SiC photodetectors with Schottky barriers”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 856–861 ; Semiconductors, 53:6 (2019), 844–849 |
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2018 |
| 15. |
D. R. Islamov, V. A. Gritsenko, V. N. Kruchinin, E. V. Ivanova, M. V. Zamoryanskaya, M. S. Lebedev, “The evolution of the conductivity and cathodoluminescence of the films of hafnium oxide in the case of a change in the concentration of oxygen vacancies”, Fizika Tverdogo Tela, 60:10 (2018), 2006–2013 ; Phys. Solid State, 60:10 (2018), 2050–2057 |
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| 16. |
V. A. Kravez, K. N. Orekhova, M. A. Yagovkina, E. V. Ivanova, M. V. Zamoryanskaya, “Eu$^{3+}$ as a luminescent probe for studying the structure of R$_{2}$O$_{3}$ materials (R = Y, Eu, and Gd)”, Optics and Spectroscopy, 125:2 (2018), 180–186 ; Optics and Spectroscopy, 125:2 (2018), 188–194 |
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2017 |
| 17. |
M. B. Karavaev, D. A. Kirilenko, E. V. Ivanova, T. B. Popova, A. A. Sitnikova, I. V. Sedova, M. V. Zamoryanskaya, “Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 56–62 ; Semiconductors, 51:1 (2017), 54–60 |
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2016 |
| 18. |
E. V. Ivanova, M. V. Zamoryanskaya, “Transformation of point defects in silicon dioxide during annealing”, Fizika Tverdogo Tela, 58:10 (2016), 1895–1898 ; Phys. Solid State, 58:10 (2016), 1962–1966 |
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| 19. |
M. B. Karavaev, D. A. Kirilenko, E. V. Ivanova, T. B. Popova, A. A. Sitnikova, I. V. Sedova, M. V. Zamoryanskaya, “Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1726 ; Semiconductors, 51:1 (2017), 54–60 |
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| 20. |
E. V. Ivanova, A. A. Sitnikova, O. V. Aleksandrov, M. V. Zamoryanskaya, “Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016), 807–810 ; Semiconductors, 50:6 (2016), 791–794 |
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| 21. |
K. M. Makeev, V. N. Gurin, L. I. Derkachenko, M. P. Volkov, A. S. Kuzanyan, A. A. Kuzanyan, T. B. Popova, E. V. Ivanova, “Obtaining of crystals of polyelemental solid solutions of rare earth hexaborides”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:1 (2016), 3–8 ; Tech. Phys. Lett., 43:1 (2016), 1–3 |
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