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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 1, Pages 56–62
DOI: https://doi.org/10.21883/FTP.2017.01.43996.8249 (Mi phts6258) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Micro- and nanocrystalline, porous, composite semiconductors

Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds

M. B. Karavaev, D. A. Kirilenko, E. V. Ivanova, T. B. Popova, A. A. Sitnikova, I. V. Sedova, M. V. Zamoryanskaya

Ioffe Institute, St. Petersburg
Full-text PDF (639 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2017.01.43996.8249
Abstract: Wide-gap ZnSe-based nanoheterostructures grown by molecular-beam epitaxy are studied by local cathodoluminescence and X-ray microanalysis. It is shown that the used methods allow nondestructive determination of the depth, elemental composition, and geometrical parameters of the nanoscale ZnCdSe layer. The accuracy of the results is verified by transmission electron microscopy. The research techniques are based on the possibility of varying the primary electron-beam energy, which results in changes in the regions of characteristic X-ray and cathodoluminescence generation.
Received: 28.05.2016
Accepted: 24.06.2016
English version:
Semiconductors, 2017, Volume 51, Issue 1, Pages 54–60
DOI: https://doi.org/10.1134/S1063782617010080
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. B. Karavaev, D. A. Kirilenko, E. V. Ivanova, T. B. Popova, A. A. Sitnikova, I. V. Sedova, M. V. Zamoryanskaya, “Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 56–62; Semiconductors, 51:1 (2017), 54–60
Citation in format AMSBIB
\Bibitem{KarKirIva17}
\by M.~B.~Karavaev, D.~A.~Kirilenko, E.~V.~Ivanova, T.~B.~Popova, A.~A.~Sitnikova, I.~V.~Sedova, M.~V.~Zamoryanskaya
\paper Study of the parameters of nanoscale layers in nanoheterostructures based on II--VI semiconductor compounds
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 1
\pages 56--62
\mathnet{http://mi.mathnet.ru/phts6258}
\crossref{https://doi.org/10.21883/FTP.2017.01.43996.8249}
\elib{https://elibrary.ru/item.asp?id=28969406 }
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 1
\pages 54--60
\crossref{https://doi.org/10.1134/S1063782617010080}
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  • https://www.mathnet.ru/eng/phts/v51/i1/p56
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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