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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
K. V. Likhachev, A. M. Skomorokhov, M. V. Uchaev, Yu. A. Uspenskaya, V. V. Kozlovsky, M. E. Levinshteĭn, I. A. Eliseyev, A. N. Smirnov, D. D. Kramushchenko, R. A. Babunts, P. G. Baranov, “Ëîêàëüíàÿ äèàãíîñòèêà ñïèíîâûõ äåôåêòîâ â îáëó÷åííûõ SiC-äèîäàõ Øîòòêè”, Pis'ma v Zh. Èksper. Teoret. Fiz., 120:5 (2024), 367–373  |
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2021 |
| 2. |
S. A. Grudinkin, A. N. Smirnov, V. Yu. Davydov, V. G. Golubev, “Dependence of the characteristics of spectrally narrow luminescence lines in nanodiamonds on the excitation and temperature parameters”, Fizika Tverdogo Tela, 63:8 (2021), 1126–1131  ; Phys. Solid State, 63:8 (2021), 1170–1175 |
| 3. |
D. A. Lozhkina, E. V. Astrova, A. I. Lihachev, A. V. Parfeneva, A. M. Rumyantsev, A. N. Smirnov, V. P. Ulin, “Silicon monoxide carbonized by fluorocarbon as a composite material for anodes of lithium-ion batteries”, Zhurnal Tekhnicheskoi Fiziki, 91:9 (2021), 1381–1392 ; Tech. Phys., 66:11 (2021), 1228–1240  |
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| 4. |
M. V. Lebedev, T. V. L'vova, A. N. Smirnov, V. Yu. Davydov, “Modification of the electronic properties of the $n$-InP(100) surface with sulfide solutions”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 895–900 ; Semiconductors, 55:11 (2021), 844–849 |
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| 5. |
M. V. Baidakova, N. A. Bert, V. Yu. Davydov, A. V. Ershov, A. A. Levin, A. N. Smirnov, L. A. Sokura, O. M. Sreseli, I. N. Yassievich, “Modification of ge structural-morphological properties in multi-layered nanoperiodic Al$_{2}$O$_{3}$/Ge structure with intermediate Si layers”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 882–889 |
| 6. |
M. G. Mynbaeva, A. N. Smirnov, K. J. Mynbaev, “Optical properties of quasi-bulk gallium-nitride crystals with highly oriented texture structure”, Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 554–558 ; Semiconductors, 55:7 (2021), 617–620 |
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| 7. |
E. Yu. Stovpyaga, D. A. Kurdyukov, D. A. Kirilenko, A. N. Smirnov, A. V. Shvidchenko, M. A. Yagovkina, V. G. Golubev, “Synthesis of monodisperse MoS$_{2}$ nanoparticles by the template method”, Fizika i Tekhnika Poluprovodnikov, 55:5 (2021), 475–480 ; Semiconductors, 55:6 (2021), 525–530 |
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2020 |
| 8. |
D. A. Eurov, E. Yu. Stovpyaga, D. A. Kurdyukov, A. A. Dukin, A. N. Smirnov, V. G. Golubev, “Luminescent properties of carbon nanodots bound to the surface of spherical microresonator”, Fizika Tverdogo Tela, 62:10 (2020), 1690–1696 ; Phys. Solid State, 62:10 (2020), 1898–1904 |
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| 9. |
A. S. Kulagina, A. I. Khrebtov, A. A. Ryzhov, V. V. Danilov, I. V. Shtrom, K. P. Kotlyar, P. A. Alekseev, A. N. Smirnov, R. R. Reznik, G. E. Cirlin, “Nonlinear bleaching of InAs nanowires in the visible range”, Optics and Spectroscopy, 128:1 (2020), 128–133 ; Optics and Spectroscopy, 128:1 (2020), 125–130 |
| 10. |
I. A. Eliseyev, V. Yu. Davydov, E. M. Roginskii, Yu. E. Kitaev, A. N. Smirnov, M. A. Yagovkina, D. V. Nechaev, V. N. Zhmerik, M. V. Smirnov, “Structural and dynamical properties of short-period GaN/AlN superlattices: Experiment and theory”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1397 ; Semiconductors, 54:12 (2020), 1706–1709 |
| 11. |
I. A. Eliseyev, V. Yu. Davydov, A. N. Smirnov, S. V. Belov, A. V. Zubov, S. P. Lebedev, A. A. Lebedev, “Raman studies of graphene films grown on 4$H$-SiC subjected to deposition of Ni”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1388 ; Semiconductors, 54:12 (2020), 1674–1677 |
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2019 |
| 12. |
G. S. Grebenyuk, E. Yu. Lobanova, D. A. Smirnov, I. A. Eliseyev, A. V. Zubov, A. N. Smirnov, S. P. Lebedev, V. Yu. Davydov, A. A. Lebedev, I. I. Pronin, “Cobalt intercalation of graphene on silicon carbide”, Fizika Tverdogo Tela, 61:7 (2019), 1374–1384 ; Phys. Solid State, 61:7 (2019), 1316–1326 |
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| 13. |
R. V. Levin, A. S. Vlasov, A. N. Smirnov, B. V. Pushnii, “High-resistivity gallium antimonide produced by metal–organic vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1599–1603 ; Semiconductors, 53:12 (2019), 1563–1567 |
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| 14. |
V. Yu. Davydov, V. N. Jmerik, E. M. Roginskii, Yu. E. Kitaev, Y. M. Beltukov, M. B. Smirnov, D. V. Nechaev, A. N. Smirnov, I. A. Eliseyev, P. N. Brunkov, S. V. Ivanov, “Boson peak related to Ga-nanoclusters in AlGaN layers grown by plasma-assisted molecular beam epitaxy at Ga-rich conditions”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1519 ; Semiconductors, 53:11 (2019), 1479–1488 |
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| 15. |
S. V. Sorokin, P. S. Avdienko, I. V. Sedova, D. A. Kirilenko, M. A. Yagovkina, A. N. Smirnov, V. Yu. Davydov, S. V. Ivanov, “Molecular-beam epitaxy of two-dimensional gase layers on GaAs(001) and GaAs(112) substrates: structural and optical properties”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1152–1158 ; Semiconductors, 53:8 (2019), 1131–1137 |
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| 16. |
D. A. Kurdyukov, N. A. Feoktistov, D. A. Kirilenko, A. N. Smirnov, V. Yu. Davydov, V. G. Golubev, “Template synthesis of monodisperse submicrometer spherical nanoporous silicon particles”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1068–1073 ; Semiconductors, 53:8 (2019), 1048–1053 |
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| 17. |
S. I. Goloudina, V. V. Luchinin, V. M. Pasyuta, A. N. Smirnov, D. A. Kirilenko, E. N. Sevostyanov, G. A. Konoplev, V. V. Andryushkin, V. P. Sklizkova, I. V. Gofman, V. M. Svetlichnyi, V. V. Kudryavtsev, “Formation of highly conductive and optically transparent multilayer graphene films by carbonization of polyimide Langmuir–Blodgett films”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:9 (2019), 50–54 ; Tech. Phys. Lett., 45:5 (2019), 471–474 |
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2018 |
| 18. |
M. V. Gomoyunova, G. S. Grebenyuk, V. Yu. Davydov, I. A. Ermakov, I. A. Eliseyev, A. A. Lebedev, S. P. Lebedev, E. Yu. Lobanova, A. N. Smirnov, D. A. Smirnov, I. I. Pronin, “Intercalation of iron atoms under graphene formed on silicon carbide”, Fizika Tverdogo Tela, 60:7 (2018), 1423–1430 ; Phys. Solid State, 60:7 (2018), 1439–1446 |
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| 19. |
S. P. Lebedev, V. Yu. Davydov, D. Yu. Usachov, A. N. Smirnov, V. S. Levitskii, I. A. Eliseyev, E. V. Gushchina, M. S. Dunaevskii, O. Yu. Vilkov, A. G. Rybkin, A. A. Lebedev, S. N. Novikov, Yu. N. Makarov, “Graphene on silicon carbide as a basis for gas- and biosensor applications”, Nanosystems: Physics, Chemistry, Mathematics, 9:1 (2018), 95–97  |
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| 20. |
P. A. Dementev, M. S. Dunaevskii, L. B. Matyshkin, A. V. Nezhdanov, A. N. Smirnov, D. O. Filatov, “Study of CsPbBr$_{3}$ nanocrystals and their agglomerates by combined scanning probe microscopy and optical spectrometry”, Optics and Spectroscopy, 125:6 (2018), 752–757 ; Optics and Spectroscopy, 125:6 (2018), 858–863 |
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| 21. |
E. Yu. Stovpyaga, D. A. Eurov, D. A. Kurdyukov, A. N. Smirnov, M. A. Yagovkina, D. R. Yakovlev, V. G. Golubev, “Template synthesis of monodisperse spherical nanocomposite SiO$_{2}$/GaN:Eu$^{3+}$ particles”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1000–1005 ; Semiconductors, 52:9 (2018), 1123–1128 |
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| 22. |
T. V. Malin, D. S. Milakhin, V. G. Mansurov, Yu. G. Galitsyn, A. S. Kozhukhov, V. V. Ratnikov, A. N. Smirnov, V. Yu. Davydov, K. S. Zhuravlev, “Effect of the sapphire-nitridation level and nucleation-layer enrichment with aluminum on the structural properties of AlN layers”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 643–650 ; Semiconductors, 52:6 (2018), 789–796 |
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| 23. |
V. N. Zhmerik, T. V. Shubina, D. V. Nechaev, A. N. Semenov, D. A. Kirilenko, V. Yu. Davydov, A. N. Smirnov, I. A. Eliseev, G. Posina, S. V. Ivanov, “Site-controlled growth of GaN nanorods with inserted InGaN quantum wells on $\mu$-cone patterned sapphire substrates by plasma-assisted MBE”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 526 ; Semiconductors, 52:5 (2018), 667–670 |
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| 24. |
P. A. Alekseev, B. R. Borodin, M. S. Dunaevskii, A. N. Smirnov, V. Yu. Davydov, S. P. Lebedev, A. A. Lebedev, “Local anodic oxidation of graphene layers on SiC”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:9 (2018), 34–40 ; Tech. Phys. Lett., 44:5 (2018), 381–383 |
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2017 |
| 25. |
V. G. Golubev, S. A. Grudinkin, V. Yu. Davydov, A. N. Smirnov, N. A. Feoktistov, “New luminescence lines in nanodiamonds obtained by chemical vapor deposition”, Fizika Tverdogo Tela, 59:12 (2017), 2382–2386 ; Phys. Solid State, 59:12 (2017), 2407–2412 |
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| 26. |
E. Yu. Stovpyaga, D. A. Eurov, D. A. Kurdyukov, A. N. Smirnov, M. A. Yagovkina, V. Yu. Grigoryev, V. V. Romanov, D. R. Yakovlev, V. G. Golubev, “The synthesis of clusters of iron oxides in mesopores of monodisperse spherical silica particles”, Fizika Tverdogo Tela, 59:8 (2017), 1598–1603 ; Phys. Solid State, 59:8 (2017), 1623–1628 |
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| 27. |
D. V. Lebedev, A. M. Mintairov, A. S. Vlasov, V. Yu. Davydov, M. M. Kulagina, S. I. Troshkov, A. A. Bogdanov, A. N. Smirnov, A. Gocalinska, G. Juska, E. Pelucchi, J. Kapaldo, S. Rouvimov, J. Merz, “Lasing in microdisks with an active region based on lattice-matched InP/AlInAs nanostructures”, Zhurnal Tekhnicheskoi Fiziki, 87:7 (2017), 1066–1070 ; Tech. Phys., 62:7 (2017), 1082–1086 |
| 28. |
V. Yu. Davydov, D. Yu. Usachov, S. P. Lebedev, A. N. Smirnov, V. S. Levitskii, I. A. Eliseyev, P. A. Alekseev, M. S. Dunaevskii, O. Yu. Vilkov, A. G. Rybkin, A. A. Lebedev, “Study of the crystal and electronic structure of graphene films grown on 6$H$-SiC (0001)”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1116–1124 ; Semiconductors, 51:8 (2017), 1072–1080 |
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| 29. |
V. V. Voronenkov, M. V. Virko, V. S. Kogotkov, A. A. Leonidov, A. V. Pinchuk, A. S. Zubrilov, R. I. Gorbunov, F. E. Latyshev, N. I. Bochkareva, Yu. S. Lelikov, D. V. Tarkhin, A. N. Smirnov, V. Yu. Davydov, I. A. Sheremet, Yu. G. Shreter, “On the laser lift-off of lightly doped micrometer-thick $n$-GaN films from substrates via the absorption of IR radiation in sapphire”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 116–123 ; Semiconductors, 51:1 (2017), 115–121 |
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| 30. |
S. P. Lebedev, I. A. Eliseyev, V. Yu. Davydov, A. N. Smirnov, V. S. Levitskii, M. G. Mynbaeva, M. M. Kulagina, B. Hähnlein, J. Pezoldt, A. A. Lebedev, “Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017), 64–72 ; Tech. Phys. Lett., 43:9 (2017), 849–852 |
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| 31. |
S. V. Kidalov, F. M. Shakhov, A. V. Shvidchenko, A. N. Smirnov, V. V. Sokolov, M. A. Yagovkina, A. Ya. Vul', “Growth of diamond microcrystals by the oriented attachment mechanism at high pressure and high temperature”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017), 21–29 ; Tech. Phys. Lett., 43:1 (2017), 53–56 |
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2016 |
| 32. |
M. A. Prosnikov, A. D. Molchanova, R. M. Dubrovin, K. N. Boldyrev, A. N. Smirnov, V. Yu. Davydov, A. M. Balbashov, M. N. Popova, R. V. Pisarev, “Lattice dynamics and electronic structure of cobalt–titanium spinel Co$_{2}$TiO$_{4}$”, Fizika Tverdogo Tela, 58:12 (2016), 2427–2433 ; Phys. Solid State, 58:12 (2016), 2516–2522 |
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| 33. |
T. V. Shubina, K. G. Belyaev, M.A. Semina, A. V. Rodina, A. A. Golovatenko, A. A. Toropov, S. V. Sorokin, I. V. Sedova, V. Yu. Davydov, A. N. Smirnov, P. S. Kop'ev, S. V. Ivanov, “Resonance energy transfer in a dense array of II–VI quantum dots”, Fizika Tverdogo Tela, 58:11 (2016), 2175–2179 ; Phys. Solid State, 58:11 (2016), 2256–2260 |
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| 34. |
A. V. Butko, V. Yu. Butko, S. P. Lebedev, A. N. Smirnov, V. Yu. Davydov, A. A. Lebedev, Yu. A. Kumzerov, “Transport properties of graphene in the region of its interface with water surface”, Fizika Tverdogo Tela, 58:7 (2016), 1432–1435 ; Phys. Solid State, 58:7 (2016), 1483–1486 |
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| 35. |
D. A. Kurdyukov, A. B. Pevtsov, A. N. Smirnov, M. A. Yagovkina, V. Yu. Grigoryev, V. V. Romanov, N. T. Bagraev, V. G. Golubev, “Formation of three-dimensional arrays of magnetic clusters NiO, Co$_{3}$O$_{4}$, and NiCo$_{2}$O$_{4}$ by the matrix method”, Fizika Tverdogo Tela, 58:6 (2016), 1176–1181 ; Phys. Solid State, 58:6 (2016), 1216–1221 |
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| 36. |
A. A. Lebedev, S. P. Lebedev, S. N. Novikov, V. Yu. Davydov, A. N. Smirnov, D. P. Litvin, Yu. N. Makarov, V. S. Levitskii, “Supersensitive graphene-based gas sensor”, Zhurnal Tekhnicheskoi Fiziki, 86:3 (2016), 135–139 ; Tech. Phys., 61:3 (2016), 453–457 |
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| 37. |
D. V. Pankin, M. B. Smirnov, V. Yu. Davydov, A. N. Smirnov, E. E. Zavarin, V. V. Lundin, “Elastic strains and delocalized optical phonons in AlN/GaN superlattices”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1064–1069 ; Semiconductors, 50:8 (2016), 1043–1048 |
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| 38. |
V. I. Nikolaev, A. I. Pechnikov, S. I. Stepanov, Sh. Sh. Sharofidinov, A. A. Golovatenko, I. P. Nikitina, A. N. Smirnov, V. E. Bugrov, A. E. Romanov, P. N. Brunkov, D. A. Kirilenko, “Chloride epitaxy of $\beta$-Ga$_{2}$O$_{3}$ layers grown on $c$-sapphire substrates”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 997–1000 ; Semiconductors, 50:7 (2016), 980–983 |
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| 39. |
M. V. Virko, V. S. Kogotkov, A. A. Leonidov, V. V. Voronenkov, Yu. T. Rebane, A. S. Zubrilov, R. I. Gorbunov, F. E. Latyshev, N. I. Bochkareva, Yu. S. Lelikov, D. V. Tarkhin, A. N. Smirnov, V. Yu. Davydov, Yu. G. Shreter, “On the laser detachment of $n$-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in $n^+$-GaN substrates”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 711–716 ; Semiconductors, 50:5 (2016), 699–704 |
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| 40. |
Sh. Sh. Sharofidinov, V. I. Nikolaev, A. N. Smirnov, A. V. Chikiryaka, I. P. Nikitina, M. A. Odnoblyudov, V. E. Bugrov, A. E. Romanov, “On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 549–552 ; Semiconductors, 50:4 (2016), 541–544 |
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