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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 5, Page 526
(Mi phts5852)
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This article is cited in 2 scientific papers (total in 2 papers)
XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Technology
Site-controlled growth of GaN nanorods with inserted InGaN quantum wells on $\mu$-cone patterned sapphire substrates by plasma-assisted MBE
V. N. Zhmerika, T. V. Shubinaa, D. V. Nechaeva, A. N. Semenova, D. A. Kirilenkoa, V. Yu. Davydova, A. N. Smirnova, I. A. Eliseeva, G. Posinab, S. V. Ivanova a Ioffe Institute, 194021 St. Petersburg, Russia
b Linköping University, Department of Physics, Chemistry and Biology, S-58183 Linköping, Sweden
Abstract:
We report on a new approach to fabricate regular arrays of GaN nanorods (NRs) with InGaN QWs by plasma-assisted molecular-beam epitaxy (PA MBE) on micro-cone patterned sapphire substrates ($\mu$-CPSSs). A two-stage PA MBE fabrication process of GaN NRs has been developed, starting with a high temperature nucleation layer growth at metal-rich conditions to aggregate selectively GaN nucleus on $c$-oriented areas of the $\mu$-CPSSs and followed by growth of 1-$\mu$m-thick GaN NRs at strongly nitrogen-rich conditions exactly on the cone tips. These results are explained by energetically favorable GaN growth on the (000$\bar1$) oriented sapphire surface. Both micro-photoluminescence and micro-cathodoluminescence confirm the formation of regular array of optically and spectrally isolated NRs without usage of any nanolithography.
Citation:
V. N. Zhmerik, T. V. Shubina, D. V. Nechaev, A. N. Semenov, D. A. Kirilenko, V. Yu. Davydov, A. N. Smirnov, I. A. Eliseev, G. Posina, S. V. Ivanov, “Site-controlled growth of GaN nanorods with inserted InGaN quantum wells on $\mu$-cone patterned sapphire substrates by plasma-assisted MBE”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 526; Semiconductors, 52:5 (2018), 667–670
Linking options:
https://www.mathnet.ru/eng/phts5852 https://www.mathnet.ru/eng/phts/v52/i5/p526
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