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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 5, Pages 711–716 (Mi phts6478)  
This article is cited in 4 scientific papers (total in 4 papers)

Manufacturing, processing, testing of materials and structures

On the laser detachment of $n$-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in $n^+$-GaN substrates

M. V. Virkoa, V. S. Kogotkova, A. A. Leonidova, V. V. Voronenkovb, Yu. T. Rebaneb, A. S. Zubrilovb, R. I. Gorbunovb, F. E. Latyshevb, N. I. Bochkarevab, Yu. S. Lelikovb, D. V. Tarkhinb, A. N. Smirnovb, V. Yu. Davydovb, Yu. G. Shreterb

a Peter the Great St. Petersburg Polytechnic University
b Ioffe Institute, St. Petersburg
Full-text PDF (1304 kB) Citations (4)
Abstract: The physical and technological basics of the method used to lift off lightly and moderately doped $n$-GaN films from heavily doped $n^+$-GaN substrates are considered. The detachment method is based on the free-charge-carrier absorption of IR laser light, which is substantially higher in $n^+$-GaN films.
Keywords: Device Structure, Free Charge Carrier, Gallium Nitride, Sacrificial Layer, Liquid Gallium.
Received: 22.10.2015
Accepted: 26.10.2015
English version:
Semiconductors, 2016, Volume 50, Issue 5, Pages 699–704
DOI: https://doi.org/10.1134/S1063782616050250
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. V. Virko, V. S. Kogotkov, A. A. Leonidov, V. V. Voronenkov, Yu. T. Rebane, A. S. Zubrilov, R. I. Gorbunov, F. E. Latyshev, N. I. Bochkareva, Yu. S. Lelikov, D. V. Tarkhin, A. N. Smirnov, V. Yu. Davydov, Yu. G. Shreter, “On the laser detachment of $n$-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in $n^+$-GaN substrates”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 711–716; Semiconductors, 50:5 (2016), 699–704
Citation in format AMSBIB
\Bibitem{VirKogLeo16}
\by M.~V.~Virko, V.~S.~Kogotkov, A.~A.~Leonidov, V.~V.~Voronenkov, Yu.~T.~Rebane, A.~S.~Zubrilov, R.~I.~Gorbunov, F.~E.~Latyshev, N.~I.~Bochkareva, Yu.~S.~Lelikov, D.~V.~Tarkhin, A.~N.~Smirnov, V.~Yu.~Davydov, Yu.~G.~Shreter
\paper On the laser detachment of $n$-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in $n^+$-GaN substrates
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 5
\pages 711--716
\mathnet{http://mi.mathnet.ru/phts6478}
\elib{https://elibrary.ru/item.asp?id=27368900}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 5
\pages 699--704
\crossref{https://doi.org/10.1134/S1063782616050250}
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    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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