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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
D. S. Ponomarev, A. E. Yachmenev, D. V. Lavrukhin, R. A. Khabibullin, N. V. Chernomyrdin, I. E. Spektor, V. N. Kurlov, V. V. Kveder, K. I. Zaytsev, “Optical-to-terahertz switches: state of the art and new opportunities for multispectral imaging”, UFN, 194:1 (2024), 2–22  ; Phys. Usp., 67:1 (2024), 3–21   |
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2021 |
| 2. |
A. E. Yachmenev, D. V. Lavrukhin, R. A. Khabibullin, Yu. G. Goncharov, I. E. Spektor, K. I. Zaitsev, V. A. Solov'ev, S. V. Ivanov, D. S. Ponomarev, “Photoconductive THz detector based on new functional layers in multi-layer heterostructures”, Optics and Spectroscopy, 129:6 (2021), 741–746  ; Optics and Spectroscopy, 129:8 (2021), 851–856 |
| 3. |
R. A. Khabibullin, K. V. Marem'yanin, D. S. Ponomarev, R. R. Galiev, A. A. Zaitsev, A. I. Danilov, I. S. Vasil'evskii, A. N. Vinichenko, A. N. Klochkov, A. A. Afonenko, D. V. Ushakov, S. V. Morozov, V. I. Gavrilenko, “3.3 THz quantum cascade laser based on a three GaAs/AlGaAs quantum-well active module with an operating temperature above 120 K”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 989–994 |
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| 4. |
A. K. Dolgov, D. V. Ushakov, A. A. Afonenko, I. N. Dyuzhikov, I. A. Glinskiy, D. S. Ponomarev, R. A. Khabibullin, “Simulation on the nonuniform electrical pumping efficiency of THz quantum-cascade lasers”, Kvantovaya Elektronika, 51:2 (2021), 164–168 [Quantum Electron., 51:2 (2021), 164–168 ] |
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2020 |
| 5. |
D. V. Lavrukhin, A. E. Yachmenev, I. A. Glinskiy, N. V. Zenchenko, R. A. Khabibullin, Yu. G. Goncharov, I. E. Spektor, K. I. Zaitsev, D. S. Ponomarev, “Emission efficiency of terahertz antennas with conventional topology and metal metasurface: a comparative analysis”, Optics and Spectroscopy, 128:7 (2020), 1012–1019 ; Optics and Spectroscopy, 128:7 (2020), 1018–1025 |
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| 6. |
G. E. Cirlin, R. R. Reznik, A. E. Zhukov, R. A. Khabibullin, K. V. Marem'yanin, V. I. Gavrilenko, S. V. Morozov, “Specific growth features of nanostructures for terahertz quantum cascade lasers and their physical properties”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 902–905 ; Semiconductors, 54:9 (2020), 1092–1095 |
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| 7. |
A. V. Gorbatova, D. I. Khusyainov, A. E. Yachmenev, R. A. Khabibullin, D. S. Ponomarev, A. M. Buryakov, E. D. Mishina, “A photoconductive THz detector based on a superlattice heterostructure with plasmonic amplification”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020), 10–14 ; Tech. Phys. Lett., 46:11 (2020), 1111–1115 |
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2019 |
| 8. |
D. V. Lavrukhin, R. R. Galiev, A. Yu. Pavlov, A. E. Yachmenev, M. V. Maytama, I. A. Glinskiy, R. A. Khabibullin, Yu. G. Goncharov, K. I. Zaitsev, D. S. Ponomarev, “Plasmonic photoconductive antennas for terahertz pulsed spectroscopy and imaging systems”, Optics and Spectroscopy, 126:5 (2019), 663–669 ; Optics and Spectroscopy, 126:5 (2019), 580–586 |
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| 9. |
D. V. Ushakov, A. A. Afonenko, A. A. Dubinov, V. I. Gavrilenko, O. Yu. Volkov, N. V. Shchavruk, D. S. Ponomarev, R. A. Khabibullin, “Balance-equation method for simulating terahertz quantum-cascade lasers using a wave-function basis with reduced dipole moments of tunnel-coupled states”, Kvantovaya Elektronika, 49:10 (2019), 913–918 [Quantum Electron., 49:10 (2019), 913–918 ] |
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2018 |
| 10. |
R. A. Khabibullin, N. V. Shchavruk, D. S. Ponomarev, D. V. Ushakov, A. A. Afonenko, I. S. Vasil'evskii, A. A. Zaitsev, A. I. Danilov, O. Yu. Volkov, V. V. Pavlovskiy, K. V. Marem'yanin, V. I. Gavrilenko, “Temperature dependences of the threshold current and output power of a quantum-cascade laser emitting at 3.3 THz”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1268–1273 ; Semiconductors, 52:11 (2018), 1380–1385 |
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| 11. |
D. S. Ponomarev, R. A. Khabibullin, A. N. Klochkov, A. E. Yachmenev, A. S. Bugaev, D. I. Khusyainov, A. M. Buryakov, V. R. Bilyk, E. D. Mishina, “Ultrafast dynamics of photoexcited charge carriers in In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As superlattices under femtosecond laser excitation”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 723–728 ; Semiconductors, 52:7 (2018), 864–869 |
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| 12. |
A. M. Buryakov, D. I. Khusyainov, E. D. Mishina, R. A. Khabibullin, A. E. Yachmenev, D. S. Ponomarev, “The role of excitation photons energy in the photoinduced carrier dynamics in InGaAs/InAlAs superlattice heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:23 (2018), 146–157 ; Tech. Phys. Lett., 44:12 (2018), 1115–1119 |
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| 13. |
D. V. Ushakov, A. A. Afonenko, A. A. Dubinov, V. I. Gavrilenko, I. S. Vasil'evskii, N. V. Shchavruk, D. S. Ponomarev, R. A. Khabibullin, “Mode loss spectra in THz quantum-cascade lasers with gold- and silver-based double metal waveguides”, Kvantovaya Elektronika, 48:11 (2018), 1005–1008 [Quantum Electron., 48:11 (2018), 1005–1008 ] |
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2017 |
| 14. |
D. S. Ponomarev, R. A. Khabibullin, A. E. Yachmenev, A. Yu. Pavlov, D. N. Slapovskiy, I. A. Glinskiy, D. V. Lavrukhin, O. A. Ruban, P. P. Maltsev, “Electrical and thermal properties of photoconductive antennas based on In$_{x}$Ga$_{1-x}$As ($x>$ 0.3) with a metamorphic buffer layer for the generation of terahertz radiation”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1267–1272 ; Semiconductors, 51:9 (2017), 1218–1223 |
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| 15. |
G. B. Galiev, A. N. Klochkov, I. S. Vasil'evskii, E. A. Klimov, S. S. Pushkarev, A. N. Vinichenko, R. A. Khabibullin, P. P. Maltsev, “Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates”, Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 792–797 ; Semiconductors, 51:6 (2017), 760–765 |
| 16. |
R. A. Khabibullin, N. V. Shchavruk, A. N. Klochkov, I. A. Glinskiy, N. V. Zenchenko, D. S. Ponomarev, P. P. Maltsev, A. A. Zaitsev, F. I. Zubov, A. E. Zhukov, G. E. Cirlin, Zh. I. Alferov, “Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 540–546 ; Semiconductors, 51:4 (2017), 514–519 |
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| 17. |
D. S. Ponomarev, R. A. Khabibullin, A. E. Yachmenev, P. P. Maltsev, M. M. Grekhov, I. E. Ilyakov, B. V. Shishkin, R. A. Akhmedzhanov, “Terahertz radiation in In$_{0.38}$Ga$_{0.62}$As, grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 535–539 ; Semiconductors, 51:4 (2017), 509–513 |
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| 18. |
D. I. Khusyainov, A. M. Buryakov, V. R. Bilyk, E. D. Mishina, D. S. Ponomarev, R. A. Khabibullin, A. E. Yachmenev, “Epitaxial stresses in an InGaAs photoconductive layer for terahertz antennas”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:22 (2017), 48–54 ; Tech. Phys. Lett., 43:11 (2017), 1020–1022 |
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| 19. |
S. V. Mikhailovich, R. R. Galiev, A. V. Zuev, A. Yu. Pavlov, D. S. Ponomarev, R. A. Khabibullin, “The influence of gate length on the electron injection of velocity in an AlGaN/AlN/GaN ÍÅÌÒ channel”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:16 (2017), 9–14 ; Tech. Phys. Lett., 43:8 (2017), 733–735 |
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| 20. |
A. V. Ikonnikov, K. V. Marem'yanin, S. V. Morozov, V. I. Gavrilenko, A. Yu. Pavlov, N. V. Shchavruk, R. A. Khabibullin, R. R. Reznik, G. E. Cirlin, F. I. Zubov, A. E. Zhukov, Zh. I. Alferov, “Terahertz radiation generation in multilayer quantum-cascade heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:7 (2017), 86–94 ; Tech. Phys. Lett., 43:4 (2017), 362–365 |
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2016 |
| 21. |
K. N. Tomosh, A. Yu. Pavlov, V. Yu. Pavlov, R. A. Khabibullin, S. S. Arutyunyan, P. P. Maltsev, “Investigation of the fabrication processes of AlGaN/AlN/GaN ÍÅÌÒs with in situ Si$_{3}$N$_{4}$ passivation”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1434–1438 ; Semiconductors, 50:10 (2016), 1416–1420 |
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| 22. |
R. A. Khabibullin, N. V. Shchavruk, A. Yu. Pavlov, D. S. Ponomarev, K. N. Tomosh, R. R. Galiev, P. P. Maltsev, A. E. Zhukov, G. E. Cirlin, F. I. Zubov, Zh. I. Alferov, “Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1395–1400 ; Semiconductors, 50:10 (2016), 1377–1382 |
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| 23. |
R. A. Khabibullin, A. E. Yachmenev, D. V. Lavrukhin, D. S. Ponomarev, A. S. Bugaev, P. P. Maltsev, “Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 185–190 ; Semiconductors, 50:2 (2016), 185–190 |
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