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This article is cited in 8 scientific papers (total in 8 papers)
Epitaxial stresses in an InGaAs photoconductive layer for terahertz antennas
D. I. Khusyainova, A. M. Buryakova, V. R. Bilyka, E. D. Mishinaa, D. S. Ponomarevb, R. A. Khabibullinb, A. E. Yachmenevb a MIREA — Russian Technological University, Moscow
b Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow
Abstract:
The effect of epitaxial stresses on the excess-carrier dynamics and the terahertz radiation spectrum of the In$_{y}$Ga$_{1-y}$As films have been investigated by optical pump-probe and terahertz time-domain spectroscopy. It has been demonstrated that a In$_{y}$Ga$_{1-y}$As film with a higher mechanical stress has the shorter excesscarrier lifetime and broader terahertz radiation spectrum.
Received: 07.07.2017
Citation:
D. I. Khusyainov, A. M. Buryakov, V. R. Bilyk, E. D. Mishina, D. S. Ponomarev, R. A. Khabibullin, A. E. Yachmenev, “Epitaxial stresses in an InGaAs photoconductive layer for terahertz antennas”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:22 (2017), 48–54; Tech. Phys. Lett., 43:11 (2017), 1020–1022
Linking options:
https://www.mathnet.ru/eng/pjtf6070 https://www.mathnet.ru/eng/pjtf/v43/i22/p48
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Abstract page: | 56 | Full-text PDF : | 11 |
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