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This article is cited in 3 scientific papers (total in 3 papers)
The role of excitation photons energy in the photoinduced carrier dynamics in InGaAs/InAlAs superlattice heterostructures
A. M. Buryakova, D. I. Khusyainova, E. D. Mishinaa, R. A. Khabibullinbc, A. E. Yachmenevbc, D. S. Ponomarevbc a MIREA — Russian Technological University, Moscow
b Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow
c Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
Abstract:
The influence of excitation photons energy on the relaxation times of photoexcited carriers is studied. The involved relaxation mechanisms are evaluated and the reflection coefficient of the InGaAs/InAlAs superlattice heterostructures is analyzed. A model is built for the reflection coefficient of the InAlAs barrier layer, depending on the excitation photons energy. The resonance behavior of the reflection coefficient is explained.
Received: 24.07.2018
Citation:
A. M. Buryakov, D. I. Khusyainov, E. D. Mishina, R. A. Khabibullin, A. E. Yachmenev, D. S. Ponomarev, “The role of excitation photons energy in the photoinduced carrier dynamics in InGaAs/InAlAs superlattice heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:23 (2018), 146–157; Tech. Phys. Lett., 44:12 (2018), 1115–1119
Linking options:
https://www.mathnet.ru/eng/pjtf5630 https://www.mathnet.ru/eng/pjtf/v44/i23/p146
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