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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
P. A. Bokhan, K. S. Zhuravlev, D. È. Zakrevskii, T. V. Malin, I. V. Osinnykh, N. V. Fateev, “Features of optical gain in heavily doped Al$_{x}$Ga$_{1-x}$N:Si-structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021), 39–42   ; Tech. Phys. Lett., 47:9 (2021), 692–695 |
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2019 |
| 2. |
D. S. Milakhin, T. V. Malin, V. G. Mansurov, Yu. G. Galitsyn, A. S. Kozhukhov, I. A. Aleksandrov, N. V. Rzheutskii, E. V. Lebiadok, A. A. Razumets, K. S. Zhuravlev, “Forming the GaN nanocrystals on the graphene-like $g$-AlN and $g$-Si$_{3}$N$_{3}$ surface”, Fizika Tverdogo Tela, 61:12 (2019), 2327–2332 ; Phys. Solid State, 61:12 (2019), 2329–2334 |
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| 3. |
N. N. Novikova, V. A. Yakovlev, S. A. Klimin, T. V. Malin, A. M. Gilinskii, K. S. Zhuravlev, “Surface polaritons in silicon-doped aluminum and gallium nitride films”, Optics and Spectroscopy, 127:1 (2019), 42–45 ; Optics and Spectroscopy, 127:1 (2019), 36–39 |
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| 4. |
P. A. Bokhan, K. S. Zhuravlev, D. È. Zakrevskii, T. V. Malin, I. V. Osinnykh, N. V. Fateev, “Optical gain in heavily doped Al$_{x}$Ga$_{1-x}$N : Si structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:18 (2019), 48–51 ; Tech. Phys. Lett., 45:9 (2019), 951–954 |
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| 5. |
T. V. Malin, D. S. Milakhin, I. A. Aleksandrov, V. E. Zemlyakov, V. I. Egorkin, A. A. Zaitsev, D. Yu. Protasov, A. S. Kozhukhov, B. Ya. Ber, D. Yu. Kazantsev, V. G. Mansurov, K. S. Zhuravlev, “Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019), 21–24 ; Tech. Phys. Lett., 45:8 (2019), 761–764 |
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2018 |
| 6. |
V. G. Mansurov, Yu. G. Galitsyn, T. V. Malin, S. A. Teys, E. V. Fedosenko, A. S. Kozhukhov, K. S. Zhuravlev, Ildikó Cora, Béla Pécz, “Formation of a graphene-like SiN layer on the surface Si(111)”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1407–1413 ; Semiconductors, 52:12 (2018), 1511–1517 |
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| 7. |
T. V. Malin, D. S. Milakhin, V. G. Mansurov, Yu. G. Galitsyn, A. S. Kozhukhov, V. V. Ratnikov, A. N. Smirnov, V. Yu. Davydov, K. S. Zhuravlev, “Effect of the sapphire-nitridation level and nucleation-layer enrichment with aluminum on the structural properties of AlN layers”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 643–650 ; Semiconductors, 52:6 (2018), 789–796 |
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| 8. |
V. V. Ratnikov, M. P. Scheglov, B. Ya. Ber, D. Yu. Kazantsev, I. V. Osinnykh, T. V. Malin, K. S. Zhuravlev, “Change in the character of biaxial stresses with an increase in $x$ from 0 to 0.7 in Al$_{x}$Ga$_{1-x}$N:Si layers obtained by ammonia molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 233–237 ; Semiconductors, 52:2 (2018), 221–225 |
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| 9. |
P. A. Bokhan, K. S. Zhuravlev, D. È. Zakrevskii, T. V. Malin, I. V. Osinnykh, N. V. Fateev, “Amplified luminescence of heavily doped Al<sub>x</sub>Ga<sub>1-x</sub>N structures under optical pumping”, Kvantovaya Elektronika, 48:3 (2018), 215–221 [Quantum Electron., 48:3 (2018), 215–221   ] |
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2017 |
| 10. |
K. S. Zhuravlev, T. V. Malin, V. G. Mansurov, O. E. Tereshchenko, K. K. Abgaryan, D. L. Reviznikov, V. E. Zemlyakov, V. I. Egorkin, Ya. M. Parnes, V. G. Tikhomirov, I. P. Prosvirin, “AlN/GaN heterostructures for normally-off transistors”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 395–402 ; Semiconductors, 51:3 (2017), 379–386 |
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| 11. |
P. A. Bokhan, K. S. Zhuravlev, Dm. È. Zakrevskii, T. V. Malin, I. V. Osinnykh, N. V. Fateev, “Radiation enhancement in doped AlGaN-structures upon optical pumping”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017), 5–13 ; Tech. Phys. Lett., 43:1 (2017), 46–49 |
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2016 |
| 12. |
K. S. Zhuravlev, T. V. Malin, V. G. Mansurov, V. E. Zemlyakov, V. I. Egorkin, Ya. M. Parnes, “Normally off transistors based on in situ passivated AlN/GaN heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:14 (2016), 72–79 ; Tech. Phys. Lett., 42:7 (2016), 750–753 |
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