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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 3, Pages 395–402
DOI: https://doi.org/10.21883/FTP.2017.03.44215.8287 (Mi phts6217) 		 
This article is cited in 5 scientific papers (total in 5 papers)

Semiconductor physics

AlN/GaN heterostructures for normally-off transistors

K. S. Zhuravlevab, T. V. Malina, V. G. Mansurova, O. E. Tereshchenkoab, K. K. Abgaryanc, D. L. Reviznikovc, V. E. Zemlyakovd, V. I. Egorkind, Ya. M. Parnese, V. G. Tikhomirove, I. P. Prosvirinf

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c Dorodnicyn Computing Centre of the Russian Academy of Sciences, Moscow, Russia
d National Research University of Electronic Technology
e ZAO Svetlana-Elektronpribor, St. Petersburg
f Boreskov Institute of Catalysis SB RAS, Novosibirsk
Full-text PDF (1180 kB) Citations (5)
DOI: https://doi.org/10.21883/FTP.2017.03.44215.8287
Abstract: The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed. Normally-off transistors with a maximum current density of $\sim$1 A/mm, a saturation voltage of 1 V, a transconductance of 350 mS/mm, and a breakdown voltage of more than 60 V are demonstrated. Gate lag and drain lag effects are almost lacking in these transistors.
Received: 30.08.2016
Accepted: 05.09.2016
English version:
Semiconductors, 2017, Volume 51, Issue 3, Pages 379–386
DOI: https://doi.org/10.1134/S1063782617030277
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: K. S. Zhuravlev, T. V. Malin, V. G. Mansurov, O. E. Tereshchenko, K. K. Abgaryan, D. L. Reviznikov, V. E. Zemlyakov, V. I. Egorkin, Ya. M. Parnes, V. G. Tikhomirov, I. P. Prosvirin, “AlN/GaN heterostructures for normally-off transistors”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 395–402; Semiconductors, 51:3 (2017), 379–386
Citation in format AMSBIB
\Bibitem{ZhuMalMan17}
\by K.~S.~Zhuravlev, T.~V.~Malin, V.~G.~Mansurov, O.~E.~Tereshchenko, K.~K.~Abgaryan, D.~L.~Reviznikov, V.~E.~Zemlyakov, V.~I.~Egorkin, Ya.~M.~Parnes, V.~G.~Tikhomirov, I.~P.~Prosvirin
\paper AlN/GaN heterostructures for normally-off transistors
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 3
\pages 395--402
\mathnet{http://mi.mathnet.ru/phts6217}
\crossref{https://doi.org/10.21883/FTP.2017.03.44215.8287}
\elib{https://elibrary.ru/item.asp?id=29006036}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 3
\pages 379--386
\crossref{https://doi.org/10.1134/S1063782617030277}
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  • https://www.mathnet.ru/eng/phts/v51/i3/p395
    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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