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Optics and Spectroscopy, 2019, Volume 127, Issue 1, Pages 42–45
DOI: https://doi.org/10.21883/OS.2019.07.47929.84-19 (Mi os662) 		 
This article is cited in 2 scientific papers (total in 2 papers)

All-Russian Scientific Conference "Modern Problems of Optics and Spectroscopy", Troitsk, Moscow, November 28-29, 2018
Spectroscopy of condensed states

Surface polaritons in silicon-doped aluminum and gallium nitride films

N. N. Novikovaa, V. A. Yakovleva, S. A. Klimina, T. V. Malinb, A. M. Gilinskiib, K. S. Zhuravlevbc

a Institute of Spectroscopy, Russian Academy of Sciences, Troitsk, Moscow
b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
c Novosibirsk State University
Citations (2)
DOI: https://doi.org/10.21883/OS.2019.07.47929.84-19
Abstract: The reflection and attenuated total reflection spectra of aluminum and gallium nitride films doped with silicon on sapphire substrates with a buffer layer of aluminum nitride have been measured. In the spectra of attenuated total reflection, surface phonon and plasmon–phonon polaritons were observed. A high concentration of charge carriers in the gallium nitride film and their practical absence in the aluminum nitride film were experimentally observed.
Keywords: aluminum and gallium nitrides, reflection and ATR spectroscopy, surface polaritons.
Funding agency Grant number
Russian Academy of Sciences - Federal Agency for Scientific Organizations I.7
Russian Foundation for Basic Research 18-52-00008
This work was supported by the Program of the Presidium of the Russian Academy of Sciences I.7 “Modern Problems of Photonics; Sensing of Inhomogeneous Media and Materials” (N.N. Novikova, V.A. Yakovlev, and S.A. Klimin) and the Russian Foundation for Basic Research (project no. 18-52-00008) (T.V. Malin, A.M. Gilinsky, and K.S. Zhuravlev).
Received: 25.02.2018
Revised: 25.02.2018
Accepted: 15.03.2019
English version:
Optics and Spectroscopy, 2019, Volume 127, Issue 1, Pages 36–39
DOI: https://doi.org/10.1134/S0030400X19070208
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. N. Novikova, V. A. Yakovlev, S. A. Klimin, T. V. Malin, A. M. Gilinskii, K. S. Zhuravlev, “Surface polaritons in silicon-doped aluminum and gallium nitride films”, Optics and Spectroscopy, 127:1 (2019), 42–45; Optics and Spectroscopy, 127:1 (2019), 36–39
Citation in format AMSBIB
\Bibitem{NovYakKli19}
\by N.~N.~Novikova, V.~A.~Yakovlev, S.~A.~Klimin, T.~V.~Malin, A.~M.~Gilinskii, K.~S.~Zhuravlev
\paper Surface polaritons in silicon-doped aluminum and gallium nitride films
\jour Optics and Spectroscopy
\yr 2019
\vol 127
\issue 1
\pages 42--45
\mathnet{http://mi.mathnet.ru/os662}
\crossref{https://doi.org/10.21883/OS.2019.07.47929.84-19}
\elib{https://elibrary.ru/item.asp?id=41130975}
\transl
\jour Optics and Spectroscopy
\yr 2019
\vol 127
\issue 1
\pages 36--39
\crossref{https://doi.org/10.1134/S0030400X19070208}
Linking options:
  • https://www.mathnet.ru/eng/os662
  • https://www.mathnet.ru/eng/os/v127/i1/p42
    • This publication is cited in the following 2 articles:
    1. A. G. Belov, E. V. Molodtsova, S. S. Kormilitsina, R. Yu. Kozlov, E. O. Zhuravlev, S. A. Klimin, N. N. Novikova, V. A. Yakovlev, “Determination of Conductivity Electron Concentration in Single-Crystalline n-GaSb Samples Using FIR Reflection Spectra at T = 295 K”, Opt. Spectrosc., 132:4 (2024), 325  crossref
    2. M.A.A.Z. Md Sahar, Z. Hassan, S.S. Ng, N.A. Hamzah, Y. Yusuf, N.N. Novikova, V.A. Yakovlev, S.A. Klimin, “An insight into growth transition in AlN epitaxial films produced by metal-organic chemical vapour deposition at different growth temperatures”, Superlattices and Microstructures, 161 (2022), 107095  crossref
    Citing articles in Google Scholar: Russian citations, English citations
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