|
This article is cited in 2 scientific papers (total in 2 papers)
All-Russian Scientific Conference "Modern Problems of Optics and Spectroscopy", Troitsk, Moscow, November 28-29, 2018
Spectroscopy of condensed states
Surface polaritons in silicon-doped aluminum and gallium nitride films
N. N. Novikovaa, V. A. Yakovleva, S. A. Klimina, T. V. Malinb, A. M. Gilinskiib, K. S. Zhuravlevbc a Institute of Spectroscopy, Russian Academy of Sciences, Troitsk, Moscow
b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
c Novosibirsk State University
Abstract:
The reflection and attenuated total reflection spectra of aluminum and gallium nitride films doped with silicon on sapphire substrates with a buffer layer of aluminum nitride have been measured. In the spectra of attenuated total reflection, surface phonon and plasmon–phonon polaritons were observed. A high concentration of charge carriers in the gallium nitride film and their practical absence in the aluminum nitride film were experimentally observed.
Keywords:
aluminum and gallium nitrides, reflection and ATR spectroscopy, surface polaritons.
Received: 25.02.2018 Revised: 25.02.2018 Accepted: 15.03.2019
Citation:
N. N. Novikova, V. A. Yakovlev, S. A. Klimin, T. V. Malin, A. M. Gilinskii, K. S. Zhuravlev, “Surface polaritons in silicon-doped aluminum and gallium nitride films”, Optics and Spectroscopy, 127:1 (2019), 42–45; Optics and Spectroscopy, 127:1 (2019), 36–39
Linking options:
https://www.mathnet.ru/eng/os662 https://www.mathnet.ru/eng/os/v127/i1/p42
|
|