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Optics and Spectroscopy, 2019, Volume 127, Issue 1, Pages 42–45
DOI: https://doi.org/10.21883/OS.2019.07.47929.84-19
(Mi os662)
 

This article is cited in 2 scientific papers (total in 2 papers)

All-Russian Scientific Conference "Modern Problems of Optics and Spectroscopy", Troitsk, Moscow, November 28-29, 2018
Spectroscopy of condensed states

Surface polaritons in silicon-doped aluminum and gallium nitride films

N. N. Novikovaa, V. A. Yakovleva, S. A. Klimina, T. V. Malinb, A. M. Gilinskiib, K. S. Zhuravlevbc

a Institute of Spectroscopy, Russian Academy of Sciences, Troitsk, Moscow
b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
c Novosibirsk State University
Citations (2)
Abstract: The reflection and attenuated total reflection spectra of aluminum and gallium nitride films doped with silicon on sapphire substrates with a buffer layer of aluminum nitride have been measured. In the spectra of attenuated total reflection, surface phonon and plasmon–phonon polaritons were observed. A high concentration of charge carriers in the gallium nitride film and their practical absence in the aluminum nitride film were experimentally observed.
Keywords: aluminum and gallium nitrides, reflection and ATR spectroscopy, surface polaritons.
Funding agency Grant number
Russian Academy of Sciences - Federal Agency for Scientific Organizations I.7
Russian Foundation for Basic Research 18-52-00008
This work was supported by the Program of the Presidium of the Russian Academy of Sciences I.7 “Modern Problems of Photonics; Sensing of Inhomogeneous Media and Materials” (N.N. Novikova, V.A. Yakovlev, and S.A. Klimin) and the Russian Foundation for Basic Research (project no. 18-52-00008) (T.V. Malin, A.M. Gilinsky, and K.S. Zhuravlev).
Received: 25.02.2018
Revised: 25.02.2018
Accepted: 15.03.2019
English version:
Optics and Spectroscopy, 2019, Volume 127, Issue 1, Pages 36–39
DOI: https://doi.org/10.1134/S0030400X19070208
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. N. Novikova, V. A. Yakovlev, S. A. Klimin, T. V. Malin, A. M. Gilinskii, K. S. Zhuravlev, “Surface polaritons in silicon-doped aluminum and gallium nitride films”, Optics and Spectroscopy, 127:1 (2019), 42–45; Optics and Spectroscopy, 127:1 (2019), 36–39
Citation in format AMSBIB
\Bibitem{NovYakKli19}
\by N.~N.~Novikova, V.~A.~Yakovlev, S.~A.~Klimin, T.~V.~Malin, A.~M.~Gilinskii, K.~S.~Zhuravlev
\paper Surface polaritons in silicon-doped aluminum and gallium nitride films
\jour Optics and Spectroscopy
\yr 2019
\vol 127
\issue 1
\pages 42--45
\mathnet{http://mi.mathnet.ru/os662}
\crossref{https://doi.org/10.21883/OS.2019.07.47929.84-19}
\elib{https://elibrary.ru/item.asp?id=41130975}
\transl
\jour Optics and Spectroscopy
\yr 2019
\vol 127
\issue 1
\pages 36--39
\crossref{https://doi.org/10.1134/S0030400X19070208}
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  • https://www.mathnet.ru/eng/os/v127/i1/p42
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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