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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 12, Pages 1407–1413
DOI: https://doi.org/10.21883/FTP.2018.12.46748.27
(Mi phts5651)
 

This article is cited in 6 scientific papers (total in 6 papers)

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Formation of a graphene-like SiN layer on the surface Si(111)

V. G. Mansurova, Yu. G. Galitsyna, T. V. Malina, S. A. Teysa, E. V. Fedosenkoa, A. S. Kozhukhova, K. S. Zhuravlevab, Ildikó Corac, Béla Péczc

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c Thin Film Physics Department, Institute for Technical Physics and Materials Science, Centre for Energy Research, Hungarian Academy of Sciences, Budapest, Hungary
Full-text PDF (686 kB) Citations (6)
Abstract: The kinetics of the formation and thermal decomposition of a two-dimensional SiN-(8 $\times$ 8) nitride layer on a Si(111) surface is studied. The SiN-(8 $\times$ 8) structure is a metastable intermediate phase formed during the nitridation of silicon before the formation of a stable amorphous Si$_3$N$_4$ phase. Studying the SiN-(8 $\times$ 8) structure by scanning tunneling microscopy shows its complex structure: it consists of an adsorption (8/3 $\times$ 8/3) phase, with the lateral period 10.2 $\mathring{\mathrm{A}}$, and a honeycomb structure with a $\sim$6 $\mathring{\mathrm{A}}$ side of a hexagon that is turned 30$^{\circ}$ with respect the adsorption phase. The band gap of the SiN-(8 $\times$ 8) phase is measured and found to be $\sim$2.8 eV, which is smaller compared to the band gap of the $\beta$-Si$_3$N$_4$ crystal phase 5.3 eV. The interplanar spacings in the (AlN$_3$)/(SiN)$_2$ structure on the Si(111) surface are measured. The spacings are 3.3 and 2.86 $\mathring{\mathrm{A}}$ in SiN and AlN, respectively. Such interplanar spacings are indicative of weak van der Waals interaction between the layers. A model of the SiN-(8 $\times$ 8) structure as a flat graphene-like layer is suggested. The model is consistent with the diffraction and microscopy data.
Keywords: Amorphous Si$_3$N$_4$, Honeycomb Structure, Nitride Layer, Low-energy Electron Diffraction (LEED), Lateral Lattice Constant.
Funding agency Grant number
Russian Foundation for Basic Research 17-02-00947
18-52-00008
Received: 25.04.2018
Accepted: 07.05.2018
English version:
Semiconductors, 2018, Volume 52, Issue 12, Pages 1511–1517
DOI: https://doi.org/10.1134/S1063782618120151
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. G. Mansurov, Yu. G. Galitsyn, T. V. Malin, S. A. Teys, E. V. Fedosenko, A. S. Kozhukhov, K. S. Zhuravlev, Ildikó Cora, Béla Pécz, “Formation of a graphene-like SiN layer on the surface Si(111)”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1407–1413; Semiconductors, 52:12 (2018), 1511–1517
Citation in format AMSBIB
\Bibitem{ManGalMal18}
\by V.~G.~Mansurov, Yu.~G.~Galitsyn, T.~V.~Malin, S.~A.~Teys, E.~V.~Fedosenko, A.~S.~Kozhukhov, K.~S.~Zhuravlev, Ildik\'o~Cora, B\'ela~P\'ecz
\paper Formation of a graphene-like SiN layer on the surface Si(111)
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 12
\pages 1407--1413
\mathnet{http://mi.mathnet.ru/phts5651}
\crossref{https://doi.org/10.21883/FTP.2018.12.46748.27}
\elib{https://elibrary.ru/item.asp?id=36903624}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 12
\pages 1511--1517
\crossref{https://doi.org/10.1134/S1063782618120151}
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  • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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