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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 14, Pages 72–79
(Mi pjtf6361)
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This article is cited in 3 scientific papers (total in 3 papers)
Normally off transistors based on in situ passivated AlN/GaN heterostructures
K. S. Zhuravlevab, T. V. Malina, V. G. Mansurova, V. E. Zemlyakovc, V. I. Egorkinc, Ya. M. Parnesd a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c National Research University of Electronic Technology
d ZAO Svetlana-Elektronpribor, St. Petersburg
Abstract:
A molecular beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with an ultrathin AlN barrier has been developed. Based on these structures, normally off transistors with maximum current density of about 1 A/mm, saturation voltage of about 1 V, transconductance up to 350 mS/mm, and breakdown voltage above 60 V have been fabricated, in which the drain and gate current collapse phenomena are virtually absent.
Received: 29.02.2016
Citation:
K. S. Zhuravlev, T. V. Malin, V. G. Mansurov, V. E. Zemlyakov, V. I. Egorkin, Ya. M. Parnes, “Normally off transistors based on in situ passivated AlN/GaN heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:14 (2016), 72–79; Tech. Phys. Lett., 42:7 (2016), 750–753
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https://www.mathnet.ru/eng/pjtf6361 https://www.mathnet.ru/eng/pjtf/v42/i14/p72
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Abstract page: | 39 | Full-text PDF : | 16 |
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