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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 14, Pages 72–79 (Mi pjtf6361)  
This article is cited in 3 scientific papers (total in 3 papers)

Normally off transistors based on in situ passivated AlN/GaN heterostructures

K. S. Zhuravlevab, T. V. Malina, V. G. Mansurova, V. E. Zemlyakovc, V. I. Egorkinc, Ya. M. Parnesd

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c National Research University of Electronic Technology
d ZAO Svetlana-Elektronpribor, St. Petersburg
Full-text PDF (351 kB) Citations (3)
Abstract: A molecular beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with an ultrathin AlN barrier has been developed. Based on these structures, normally off transistors with maximum current density of about 1 A/mm, saturation voltage of about 1 V, transconductance up to 350 mS/mm, and breakdown voltage above 60 V have been fabricated, in which the drain and gate current collapse phenomena are virtually absent.
Received: 29.02.2016
English version:
Technical Physics Letters, 2016, Volume 42, Issue 7, Pages 750–753
DOI: https://doi.org/10.1134/S1063785016070312
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: K. S. Zhuravlev, T. V. Malin, V. G. Mansurov, V. E. Zemlyakov, V. I. Egorkin, Ya. M. Parnes, “Normally off transistors based on in situ passivated AlN/GaN heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:14 (2016), 72–79; Tech. Phys. Lett., 42:7 (2016), 750–753
Citation in format AMSBIB
\Bibitem{ZhuMalMan16}
\by K.~S.~Zhuravlev, T.~V.~Malin, V.~G.~Mansurov, V.~E.~Zemlyakov, V.~I.~Egorkin, Ya.~M.~Parnes
\paper Normally off transistors based on in situ passivated AlN/GaN heterostructures
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2016
\vol 42
\issue 14
\pages 72--79
\mathnet{http://mi.mathnet.ru/pjtf6361}
\elib{https://elibrary.ru/item.asp?id=27368268}
\transl
\jour Tech. Phys. Lett.
\yr 2016
\vol 42
\issue 7
\pages 750--753
\crossref{https://doi.org/10.1134/S1063785016070312}
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  • https://www.mathnet.ru/eng/pjtf/v42/i14/p72
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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