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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 18, Pages 48–51
DOI: https://doi.org/10.21883/PJTF.2019.18.48239.17894 (Mi pjtf5325) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Optical gain in heavily doped Al$_{x}$Ga$_{1-x}$N : Si structures

P. A. Bokhana, K. S. Zhuravlevab, D. È. Zakrevskiia, T. V. Malina, I. V. Osinnykha, N. V. Fateeva

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
Full-text PDF (164 kB) Citations (2)
DOI: https://doi.org/10.21883/PJTF.2019.18.48239.17894
Abstract: Gain characteristics of heavily doped Al$_{x}$Ga$_{1-x}$N : Si structures with c $x$ = 0.65 and 0.74 have been studied under pulsed optical pumping by Nd:YAG laser radiation at wavelength $\lambda$ = 266 nm. The absolute values of the optical gain measured at spectral maximum of the room-temperature luminescence spectrum reach (0.5 – 6) $\times$ 10$^3$ сm$^{-1}$ at an pumping power density of 8–600 kW/cm$^2$. Cross sections of the radiative and donor–acceptor recombination are close to each other and exceed 10$^{16}$ cm$^2$.
Keywords: heavily doped structures, Al$_{x}$Ga$_{1-x}$N/AlN, gain characteristics.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 0306-2019-0020
Russian Foundation for Basic Research 18-52-00008
This work was performed in the framework of the Program of State Orders (project no. 0306.2019-0020) and supported in part by the Russian Foundation for Basic Research (project. no. 18-52-00008).
Received: 27.05.2019
Revised: 27.05.2019
Accepted: 13.06.2019
English version:
Technical Physics Letters, 2019, Volume 45, Issue 9, Pages 951–954
DOI: https://doi.org/10.1134/S1063785019090189
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. A. Bokhan, K. S. Zhuravlev, D. È. Zakrevskii, T. V. Malin, I. V. Osinnykh, N. V. Fateev, “Optical gain in heavily doped Al$_{x}$Ga$_{1-x}$N : Si structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:18 (2019), 48–51; Tech. Phys. Lett., 45:9 (2019), 951–954
Citation in format AMSBIB
\Bibitem{BokZhuZak19}
\by P.~A.~Bokhan, K.~S.~Zhuravlev, D.~\`E.~Zakrevskii, T.~V.~Malin, I.~V.~Osinnykh, N.~V.~Fateev
\paper Optical gain in heavily doped Al$_{x}$Ga$_{1-x}$N : Si structures
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 18
\pages 48--51
\mathnet{http://mi.mathnet.ru/pjtf5325}
\crossref{https://doi.org/10.21883/PJTF.2019.18.48239.17894}
\elib{https://elibrary.ru/item.asp?id=41175085}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 9
\pages 951--954
\crossref{https://doi.org/10.1134/S1063785019090189}
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