Forming the GaN nanocrystals on the graphene-like $g$-AlN and $g$-Si$_{3}$N$_{3}$ surface

The formation of GaN nanocrystals on the graphene-like AlN ($g$-AlN) modification and graphene-like ($g$-Si$_{3}$N$_{3}$) silicon nitride by ammonia molecular beam epitaxy has been investigated. It has been found that the GaN growth on the $g$-Si$_{3}$N$_{3}$ surface leads to the formation of misoriented nanocrystals. During the GaN growth on the $g$-AlN surface, the epitaxial growth of similarly oriented GaN quantum dots of the graphite-like modification has been observed. The lattice parameters and energy structure of two graphite-like GaN modifications with the alternating $AB$ (graphite structure) and $AA^+$ (hexagonal boron nitride structure) layers have been calculated.