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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 15, Pages 21–24
DOI: https://doi.org/10.21883/PJTF.2019.15.48081.17844 (Mi pjtf5360) 		 
This article is cited in 5 scientific papers (total in 5 papers)

Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors

T. V. Malina, D. S. Milakhina, I. A. Aleksandrova, V. E. Zemlyakovb, V. I. Egorkinb, A. A. Zaitsevb, D. Yu. Protasovac, A. S. Kozhukhova, B. Ya. Berd, D. Yu. Kazantsevd, V. G. Mansurova, K. S. Zhuravlevae

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b National Research University of Electronic Technology
c Novosibirsk State Technical University
d Ioffe Institute, St. Petersburg
e Novosibirsk State University
Full-text PDF (355 kB) Citations (5)
DOI: https://doi.org/10.21883/PJTF.2019.15.48081.17844
Abstract: In this paper the possibility of obtaining the intentionally undoped high resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors by ammonia molecular beam epitaxy was demonstrated. The growth conditions based on background impurity concentrations and point defects calculations for different gallium and ammonia flows ratios were optimized.
Keywords: GaN, intrinsic point defects, background impurities, AlGaN/GaN, HEMT, NH$_3$-MBE.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 14.577.21.0250
This study was supported by the Ministry of Science and Higher Education of the Russian Federation, agreement no. 14.577.21.0250 dated Sept. 26, 2017, unique object identifier RFMEFI57717X0250.
Received: 19.04.2019
Revised: 24.04.2019
Accepted: 24.04.2019
English version:
Technical Physics Letters, 2019, Volume 45, Issue 8, Pages 761–764
DOI: https://doi.org/10.1134/S1063785019080108
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: T. V. Malin, D. S. Milakhin, I. A. Aleksandrov, V. E. Zemlyakov, V. I. Egorkin, A. A. Zaitsev, D. Yu. Protasov, A. S. Kozhukhov, B. Ya. Ber, D. Yu. Kazantsev, V. G. Mansurov, K. S. Zhuravlev, “Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019), 21–24; Tech. Phys. Lett., 45:8 (2019), 761–764
Citation in format AMSBIB
\Bibitem{MalMilAle19}
\by T.~V.~Malin, D.~S.~Milakhin, I.~A.~Aleksandrov, V.~E.~Zemlyakov, V.~I.~Egorkin, A.~A.~Zaitsev, D.~Yu.~Protasov, A.~S.~Kozhukhov, B.~Ya.~Ber, D.~Yu.~Kazantsev, V.~G.~Mansurov, K.~S.~Zhuravlev
\paper Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 15
\pages 21--24
\mathnet{http://mi.mathnet.ru/pjtf5360}
\crossref{https://doi.org/10.21883/PJTF.2019.15.48081.17844}
\elib{https://elibrary.ru/item.asp?id=41131142}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 8
\pages 761--764
\crossref{https://doi.org/10.1134/S1063785019080108}
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    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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