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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
V. N. Bessolov, N. D. Gruzinov, M. E. Kompan, E. V. Konenkova, V. N. Panteleev, S. N. Rodin, M. P. Scheglov, “Vapor-phase epitaxy of AlN layers on AlN/Si(111) templates synthesized by reactive magnetron sputtering”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:8 (2020), 29–31   ; Tech. Phys. Lett., 46:4 (2020), 382–384 |
| 2. |
V. I. Nikolaev, A. I. Pechnikov, L. I. Guzilova, A. V. Chikiryaka, M. P. Scheglov, V. V. Nikolaev, S. I. Stepanov, A. A. Vasil’ev, I. V. Shchemerov, A. Ya. Polyakov, “Thick epitaxial $\alpha$-Ga$_{2}$O$_{3}$ : Sn layers on a patterned sapphire substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020), 27–29 ; Tech. Phys. Lett., 46:3 (2020), 228–230 |
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2019 |
| 3. |
V. A. Sanina, B. Kh. Khannanov, E. I. Golovenchits, M. P. Scheglov, “Electric polarization in ErCrO$_{3}$ induced by restricted polar domains”, Fizika Tverdogo Tela, 61:3 (2019), 501–509 ; Phys. Solid State, 61:3 (2019), 370–378 |
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| 4. |
V. A. Sanina, B. Kh. Khannanov, E. I. Golovenchits, M. P. Scheglov, “Electric polarization in YCrO$_{3}$ induced by restricted polar domains of magnetic and structural natures”, Fizika Tverdogo Tela, 61:1 (2019), 95–103 ; Phys. Solid State, 60:12 (2018), 2532–2540 |
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| 5. |
V. N. Bessolov, E. V. Gushchina, E. V. Konenkova, S. D. Konenkov, T. V. L'vova, V. N. Panteleev, M. P. Scheglov, “Synthesis of hexagonal AlN è GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy”, Zhurnal Tekhnicheskoi Fiziki, 89:4 (2019), 574–577 ; Tech. Phys., 64:4 (2019), 531–534 |
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| 6. |
G. S. Gagis, R. V. Levin, A. E. Marichev, B. V. Pushnii, M. P. Scheglov, B. Ya. Ber, D. Yu. Kazantsev, Yu. A. Kudriavtsev, A. S. Vlasov, T. B. Popova, D. V. Chistyakov, V. I. Kuchinskii, V. I. Vasil’ev, “Investigation of composition uniformity on thickness of GaInAsP layers grown on InP substrates by vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1512–1518 ; Semiconductors, 53:11 (2019), 1472–1478 |
3
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| 7. |
V. N. Bessolov, E. V. Konenkova, T. A. Orlova, S. N. Rodin, N. V. Seredova, A. V. Solomnikova, M. P. Scheglov, D. S. Kibalov, V. K. Smirnov, “Properties of semipolar GaN grown on a Si(100) substrate”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 1006–1009 ; Semiconductors, 53:7 (2019), 989–992 |
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| 8. |
A. I. Pechnikov, S. I. Stepanov, A. V. Chikiryaka, M. P. Scheglov, M. A. Odnoblyudov, V. I. Nikolaev, “Thick $\alpha$-Ga$_{2}$O$_{3}$ layers on sapphire substrates grown by halide epitaxy”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 789–792 ; Semiconductors, 53:6 (2019), 780–783 |
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| 9. |
G. S. Gagis, A. S. Vlasov, R. V. Levin, A. E. Marichev, M. P. Scheglov, T. B. Popova, B. Ya. Ber, D. Yu. Kazantsev, D. V. Chistyakov, V. I. Kuchinskii, V. I. Vasil’ev, “Luminescence properties of GaInAsP layers with graded composition–depth profiles grown on InP substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019), 22–25 ; Tech. Phys. Lett., 45:10 (2019), 1031–1034 |
1
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| 10. |
V. N. Bessolov, M. E. Kompan, E. V. Konenkova, V. N. Panteleev, S. N. Rodin, M. P. Scheglov, “Epitaxy of GaN(0001) and GaN(10$\bar1$1) layers on Si(100) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019), 3–5 |
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2018 |
| 11. |
V. A. Sanina, B. Kh. Khannanov, E. I. Golovenchits, M. P. Scheglov, “Frozen superparaelectric state of local polar regions in GdMn$_{2}$O$_{5}$ and Gd$_{0.8}$Ce$_{0.2}$Mn$_{2}$O$_{5}$”, Fizika Tverdogo Tela, 60:3 (2018), 531–542 ; Phys. Solid State, 60:3 (2018), 537–548 |
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| 12. |
V. V. Ratnikov, M. P. Scheglov, B. Ya. Ber, D. Yu. Kazantsev, I. V. Osinnykh, T. V. Malin, K. S. Zhuravlev, “Change in the character of biaxial stresses with an increase in $x$ from 0 to 0.7 in Al$_{x}$Ga$_{1-x}$N:Si layers obtained by ammonia molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 233–237 ; Semiconductors, 52:2 (2018), 221–225 |
1
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| 13. |
V. I. Vasil’ev, G. S. Gagis, R. V. Levin, A. E. Marichev, B. V. Pushnii, M. P. Scheglov, V. I. Kuchinskii, B. Ya. Ber, D. Yu. Kazantsev, A. N. Gorokhov, T. B. Popova, “A study of the composition gradient of GaInAsP layers formed on InP by vapor-phase epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018), 17–24 ; Tech. Phys. Lett., 44:12 (2018), 1127–1129 |
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| 14. |
R. N. Kyutt, M. P. Scheglov, “Reciprocal-space maps of X-ray diffraction intensity distribution and their relation to the dislocation structure of epitaxial layers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:12 (2018), 96–102 ; Tech. Phys. Lett., 44:6 (2018), 548–550 |
| 15. |
V. N. Bessolov, E. V. Konenkova, T. A. Orlova, S. N. Rodin, M. P. Scheglov, D. S. Kibalov, V. K. Smirnov, “Semipolar gan layers grown on nanostructured Si(100) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:12 (2018), 45–51 ; Tech. Phys. Lett., 44:6 (2018), 525–527 |
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| 16. |
V. N. Bessolov, E. V. Gushchina, E. V. Konenkova, T. V. L'vova, V. N. Panteleev, M. P. Scheglov, “Hexagonal AlN layers grown on sulfided Si(100) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:2 (2018), 96–103 ; Tech. Phys. Lett., 44:1 (2018), 81–83 |
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2016 |
| 17. |
B. Kh. Khannanov, V. A. Sanina, E. I. Golovenchits, M. P. Scheglov, “Room-temperature electric polarization induced by phase separation in multiferroic GdMn$_2$O$_5$”, Pis'ma v Zh. Èksper. Teoret. Fiz., 103:4 (2016), 274–279 ; JETP Letters, 103:4 (2016), 248–253   |
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1987 |
| 18. |
M. P. Scheglov, R. N. Kyutt, L. M. Sorokin, “MEASURING THE SCATTERING OF X-RAYS UNDER THE MIRROR REFLECTION IN THE
DIFFERENTIAL REGIME”, Zhurnal Tekhnicheskoi Fiziki, 57:7 (1987), 1436–1438 |
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