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This article is cited in 7 scientific papers (total in 7 papers)
Semipolar gan layers grown on nanostructured Si(100) substrate
V. N. Bessolova, E. V. Konenkovaa, T. A. Orlovaa, S. N. Rodina, M. P. Scheglova, D. S. Kibalovb, V. K. Smirnovb a Ioffe Institute, St. Petersburg
b Quantum Silicon Company, Moscow, Russia
Abstract:
We propose a new method for growing semipolar GaN films on a Si(100) substrate with an array of sub-100-nm-sized V-grooves formed on the surface. It is shown that, using such a nanostructured substrate for metalorganic hydride vapor-phase epitaxy, it is possible to obtain GaN (10$\bar1$1) epilayers deviating by an angle of about 62$^{\circ}$ from the polar direction and having an X-ray rocking curve with a minimum FWHM value of $\omega_\theta\sim$60 arcmin.
Received: 19.02.2018
Citation:
V. N. Bessolov, E. V. Konenkova, T. A. Orlova, S. N. Rodin, M. P. Scheglov, D. S. Kibalov, V. K. Smirnov, “Semipolar gan layers grown on nanostructured Si(100) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:12 (2018), 45–51; Tech. Phys. Lett., 44:6 (2018), 525–527
Linking options:
https://www.mathnet.ru/eng/pjtf5777 https://www.mathnet.ru/eng/pjtf/v44/i12/p45
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Abstract page: | 42 | Full-text PDF : | 3 |
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