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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 44, Issue 12, Pages 45–51
DOI: https://doi.org/10.21883/PJTF.2018.12.46290.17260 (Mi pjtf5777) 		 
This article is cited in 7 scientific papers (total in 7 papers)

Semipolar gan layers grown on nanostructured Si(100) substrate

V. N. Bessolova, E. V. Konenkovaa, T. A. Orlovaa, S. N. Rodina, M. P. Scheglova, D. S. Kibalovb, V. K. Smirnovb

a Ioffe Institute, St. Petersburg
b Quantum Silicon Company, Moscow, Russia
Full-text PDF (620 kB) Citations (7)
DOI: https://doi.org/10.21883/PJTF.2018.12.46290.17260
Abstract: We propose a new method for growing semipolar GaN films on a Si(100) substrate with an array of sub-100-nm-sized V-grooves formed on the surface. It is shown that, using such a nanostructured substrate for metalorganic hydride vapor-phase epitaxy, it is possible to obtain GaN (10$\bar1$1) epilayers deviating by an angle of about 62$^{\circ}$ from the polar direction and having an X-ray rocking curve with a minimum FWHM value of $\omega_\theta\sim$60 arcmin.
Funding agency Grant number
Russian Foundation for Basic Research 16-08-00208
Received: 19.02.2018
English version:
Technical Physics Letters, 2018, Volume 44, Issue 6, Pages 525–527
DOI: https://doi.org/10.1134/S1063785018060172
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. N. Bessolov, E. V. Konenkova, T. A. Orlova, S. N. Rodin, M. P. Scheglov, D. S. Kibalov, V. K. Smirnov, “Semipolar gan layers grown on nanostructured Si(100) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:12 (2018), 45–51; Tech. Phys. Lett., 44:6 (2018), 525–527
Citation in format AMSBIB
\Bibitem{BesKonOrl18}
\by V.~N.~Bessolov, E.~V.~Konenkova, T.~A.~Orlova, S.~N.~Rodin, M.~P.~Scheglov, D.~S.~Kibalov, V.~K.~Smirnov
\paper Semipolar gan layers grown on nanostructured Si(100) substrate
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2018
\vol 44
\issue 12
\pages 45--51
\mathnet{http://mi.mathnet.ru/pjtf5777}
\crossref{https://doi.org/10.21883/PJTF.2018.12.46290.17260}
\elib{https://elibrary.ru/item.asp?id=34982921}
\transl
\jour Tech. Phys. Lett.
\yr 2018
\vol 44
\issue 6
\pages 525--527
\crossref{https://doi.org/10.1134/S1063785018060172}
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    • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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