Thick epitaxial $\alpha$-Ga$_{2}$O$_{3}$ : Sn layers on a patterned sapphire substrate

Epitaxial layers of a new wide-band semiconductor ($\alpha$-Ga$_{2}$O$_{3}$ doped with tin) have been grown by chloride epitaxy on smooth and patterned substrates, which are widely used to increase the emission yield in high-efficiency LED structures based on InGaN, and studied. The properties of the obtained gallium-oxide layers have been compared. Both types of samples had $n$-type conductivity, but the frequency and voltage dependences of their capacitance differed. Differences in the dislocation structure of epitaxial $\alpha$-Ga$_{2}$O$_{3}$ layers on smooth and patterned substrates have been identified by X-ray diffractometry.