|
This article is cited in 6 scientific papers (total in 6 papers)
Thick epitaxial $\alpha$-Ga$_{2}$O$_{3}$ : Sn layers on a patterned sapphire substrate
V. I. Nikolaevab, A. I. Pechnikovab, L. I. Guzilovaab, A. V. Chikiryakaa, M. P. Scheglova, V. V. Nikolaevc, S. I. Stepanovabc, A. A. Vasil’evb, I. V. Shchemerovb, A. Ya. Polyakovb a Ioffe Institute, St. Petersburg
b National University of Science and Technology «MISIS», Moscow
c Perfect Crystals LLC, St. Petersburg, Russia
Abstract:
Epitaxial layers of a new wide-band semiconductor ($\alpha$-Ga$_{2}$O$_{3}$ doped with tin) have been grown by chloride epitaxy on smooth and patterned substrates, which are widely used to increase the emission yield in high-efficiency LED structures based on InGaN, and studied. The properties of the obtained gallium-oxide layers have been compared. Both types of samples had $n$-type conductivity, but the frequency and voltage dependences of their capacitance differed. Differences in the dislocation structure of epitaxial $\alpha$-Ga$_{2}$O$_{3}$ layers on smooth and patterned substrates have been identified by X-ray diffractometry.
Keywords:
gallium oxide, chloride epitaxy, patterned substrates.
Received: 11.11.2019 Revised: 27.11.2019 Accepted: 28.11.2019
Citation:
V. I. Nikolaev, A. I. Pechnikov, L. I. Guzilova, A. V. Chikiryaka, M. P. Scheglov, V. V. Nikolaev, S. I. Stepanov, A. A. Vasil'ev, I. V. Shchemerov, A. Ya. Polyakov, “Thick epitaxial $\alpha$-Ga$_{2}$O$_{3}$ : Sn layers on a patterned sapphire substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020), 27–29; Tech. Phys. Lett., 46:3 (2020), 228–230
Linking options:
https://www.mathnet.ru/eng/pjtf5169 https://www.mathnet.ru/eng/pjtf/v46/i5/p27
|
Statistics & downloads: |
Abstract page: | 40 | Full-text PDF : | 11 |
|