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This article is cited in 6 scientific papers (total in 6 papers)
Manufacturing, processing, testing of materials and structures
Properties of semipolar GaN grown on a Si(100) substrate
V. N. Bessolova, E. V. Konenkovaa, T. A. Orlovaa, S. N. Rodina, N. V. Seredovaa, A. V. Solomnikovab, M. P. Scheglova, D. S. Kibalovc, V. K. Smirnovc a Ioffe Institute, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
c Quantum Silicon OOO, Moscow, Russia
Abstract:
Semipolar GaN layers synthesized on a nanostructured Si(100) substrate are studied. It is shown that using a Si(100) nanoprofile combined with Si$_ x$ N$_ y$ nanostrips on top of nanostructures can yield, via metal-organic chemical-vapor deposition, GaN(10$\bar1$2) layers. An additional SiC buffer layer makes it possible to obtain GaN(10$\bar1$1) layers with a full-width at half-maximum of the diffraction-curve of $\omega_\theta\approx$ 35' arcmin. It is found that the luminescence properties of the semipolar layers are mostly due to basal plane stacking faults BSF$_ S$ -I$_1$, in contrast to polar layers in which these properties are mostly due to the recombination of excitons.
Received: 17.12.2018 Revised: 22.12.2018 Accepted: 25.12.2018
Citation:
V. N. Bessolov, E. V. Konenkova, T. A. Orlova, S. N. Rodin, N. V. Seredova, A. V. Solomnikova, M. P. Scheglov, D. S. Kibalov, V. K. Smirnov, “Properties of semipolar GaN grown on a Si(100) substrate”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 1006–1009; Semiconductors, 53:7 (2019), 989–992
Linking options:
https://www.mathnet.ru/eng/phts5469 https://www.mathnet.ru/eng/phts/v53/i7/p1006
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