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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 44, Issue 2, Pages 96–103
DOI: https://doi.org/10.21883/PJTF.2018.02.45470.17006
(Mi pjtf5913)
 

This article is cited in 5 scientific papers (total in 5 papers)

Hexagonal AlN layers grown on sulfided Si(100) substrate

V. N. Bessolova, E. V. Gushchinaa, E. V. Konenkovaab, T. V. L'vovaa, V. N. Panteleeva, M. P. Scheglova

a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Full-text PDF (208 kB) Citations (5)
Abstract: We have studied the influence of sulfide passivation on the initial stages of aluminum nitride (AlN)-layer nucleation and growth by hydride vapor-phase epitaxy (HVPE) on (100)-oriented single-crystalline silicon substrates. It is established that the substrate pretreatment in (NH$_4$)$_2$S aqueous solution leads to the columnar nucleation of hexagonal AlN crystals of two modifications rotated by 30$^\circ$ relative to each other. Based on the sulfide treatment, a simple method of oxide removal from and preparation of Si(100) substrate surface is developed that can be used for the epitaxial growth of group-III nitride layers.
Funding agency Grant number
Russian Foundation for Basic Research 16-08-00208
Received: 08.08.2017
English version:
Technical Physics Letters, 2018, Volume 44, Issue 1, Pages 81–83
DOI: https://doi.org/10.1134/S106378501801011X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. N. Bessolov, E. V. Gushchina, E. V. Konenkova, T. V. L'vova, V. N. Panteleev, M. P. Scheglov, “Hexagonal AlN layers grown on sulfided Si(100) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:2 (2018), 96–103; Tech. Phys. Lett., 44:1 (2018), 81–83
Citation in format AMSBIB
\Bibitem{BesGusKon18}
\by V.~N.~Bessolov, E.~V.~Gushchina, E.~V.~Konenkova, T.~V.~L'vova, V.~N.~Panteleev, M.~P.~Scheglov
\paper Hexagonal AlN layers grown on sulfided Si(100) substrate
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2018
\vol 44
\issue 2
\pages 96--103
\mathnet{http://mi.mathnet.ru/pjtf5913}
\crossref{https://doi.org/10.21883/PJTF.2018.02.45470.17006}
\elib{https://elibrary.ru/item.asp?id=32737564}
\transl
\jour Tech. Phys. Lett.
\yr 2018
\vol 44
\issue 1
\pages 81--83
\crossref{https://doi.org/10.1134/S106378501801011X}
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  • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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