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This article is cited in 5 scientific papers (total in 5 papers)
Hexagonal AlN layers grown on sulfided Si(100) substrate
V. N. Bessolova, E. V. Gushchinaa, E. V. Konenkovaab, T. V. L'vovaa, V. N. Panteleeva, M. P. Scheglova a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Abstract:
We have studied the influence of sulfide passivation on the initial stages of aluminum nitride (AlN)-layer nucleation and growth by hydride vapor-phase epitaxy (HVPE) on (100)-oriented single-crystalline silicon substrates. It is established that the substrate pretreatment in (NH$_4$)$_2$S aqueous solution leads to the columnar nucleation of hexagonal AlN crystals of two modifications rotated by 30$^\circ$ relative to each other. Based on the sulfide treatment, a simple method of oxide removal from and preparation of Si(100) substrate surface is developed that can be used for the epitaxial growth of group-III nitride layers.
Received: 08.08.2017
Citation:
V. N. Bessolov, E. V. Gushchina, E. V. Konenkova, T. V. L'vova, V. N. Panteleev, M. P. Scheglov, “Hexagonal AlN layers grown on sulfided Si(100) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:2 (2018), 96–103; Tech. Phys. Lett., 44:1 (2018), 81–83
Linking options:
https://www.mathnet.ru/eng/pjtf5913 https://www.mathnet.ru/eng/pjtf/v44/i2/p96
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