|
This article is cited in 2 scientific papers (total in 2 papers)
Physical science of materials
Synthesis of hexagonal AlN и GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy
V. N. Bessolova, E. V. Gushchinaa, E. V. Konenkovaa, S. D. Konenkovb, T. V. L'vovaa, V. N. Panteleeva, M. P. Scheglova a Ioffe Institute, St. Petersburg
b Saint Petersburg State University
Abstract:
Synthesis of AlN and GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy has been considered. The process includes sulfidizing of the silicon surface, nucleation and growth of an AlN layer, and then formation of a GaN/AlN structure. It has been found that in the case of a (100)Si substrate, GaN nucleates on buffer AlN layers that may have two crystallographic orientations in contrast to a Si(111) substrate, on which a buffer layer may have only one orientation. It has been shown that the treatment of the Si(100) substrate in an aqueous solution of (NH$_4$)$_2$S decreases the FWHM of the rocking curve for GaN(0002) by a factor of 1.5.
Received: 16.04.2018
Citation:
V. N. Bessolov, E. V. Gushchina, E. V. Konenkova, S. D. Konenkov, T. V. L'vova, V. N. Panteleev, M. P. Scheglov, “Synthesis of hexagonal AlN и GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy”, Zhurnal Tekhnicheskoi Fiziki, 89:4 (2019), 574–577; Tech. Phys., 64:4 (2019), 531–534
Linking options:
https://www.mathnet.ru/eng/jtf5645 https://www.mathnet.ru/eng/jtf/v89/i4/p574
|
Statistics & downloads: |
Abstract page: | 39 | Full-text PDF : | 7 |
|