|
|
|
Publications in Math-Net.Ru |
Citations |
|
2022 |
| 1. |
S. O. Slipchenko, D. A. Veselov, V. V. Zolotarev, A. V. Lyutetskiy, A. A. Podoskin, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, P. S. Kop'ev, N. A. Pikhtin, “High-power laser diodes based on InGaAs(Р)/Al(In)GaAs(P)/GaAs heterostructures with low internal optical losses”, Kvantovaya Elektronika, 52:12 (2022), 1152–1165  [Bull. Lebedev Physics Institute, 50:suppl. 4 (2023), S494–S512] |
7
|
|
2021 |
| 2. |
Z. N. Sokolova, N. A. Pikhtin, S. O. Slipchenko, L. V. Asryan, “Operating characteristics of semiconductor quantum well lasers as functions of the waveguide region thickness”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1229–1235  |
| 3. |
A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko, N. A. Pikhtin, “Analysis of the threshold conditions and lasing efficiency of internally circulating modes in large rectangular cavities based on AlGaAs/GaAs/InGaAs laser heterostructures”, Fizika i Tekhnika Poluprovodnikov, 55:5 (2021), 460–465 ; Semiconductors, 55:5 (2021), 518–523 |
|
2020 |
| 4. |
A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko, N. A. Pikhtin, “Switching control model of closed-mode structures in large rectangular cavities based on AlGaAs/InGaAs/GaAs laser heterostructures”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 484–489 ; Semiconductors, 54:5 (2020), 581–586 |
2
|
|
2019 |
| 5. |
A. A. Podoskin, D. N. Romanovich, I. S. Shashkin, P. S. Gavrina, Z. N. Sokolova, S. O. Slipchenko, N. A. Pikhtin, “Сlosed mode features in rectangular resonators based on InGaAs/AlGaAs/GaAs laser heterostructures”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 839–843 ; Semiconductors, 53:6 (2019), 828–832 |
5
|
|
2017 |
| 6. |
Z. N. Sokolova, D. A. Veselov, N. A. Pikhtin, I. S. Tarasov, L. V. Asryan, “Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers”, Fizika i Tekhnika Poluprovodnikov, 51:7 (2017), 998–1003 ; Semiconductors, 51:7 (2017), 959–964 |
14
|
|
2016 |
| 7. |
D. A. Veselov, I. S. Shashkin, Yu. K. Bobretsova, K. V. Bakhvalov, A. V. Lyutetskiy, V. A. Kapitonov, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, I. S. Tarasov, “Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1414–1419 ; Semiconductors, 50:10 (2016), 1396–1402 |
8
|
| 8. |
Z. N. Sokolova, K. V. Bakhvalov, A. V. Lyutetskiy, N. A. Pikhtin, I. S. Tarasov, L. V. Asryan, “Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 679–682 ; Semiconductors, 50:5 (2016), 667–670 |
5
|
| 9. |
Z. N. Sokolova, N. A. Pikhtin, I. S. Tarasov, L. V. Asryan, “Threshold characteristics of a semiconductor quantum-well laser: inclusion of global electroneutrality in the structure”, Kvantovaya Elektronika, 46:9 (2016), 777–781 [Quantum Electron., 46:9 (2016), 777–781   ] |
6
|
|
2015 |
| 10. |
V. V. Zolotarev, A. Yu. Leshko, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, Ya. V. Lubyanskiy, N. V. Voronkova, I. S. Tarasov, “Integrated high-order surface diffraction gratings for diode lasers”, Kvantovaya Elektronika, 45:12 (2015), 1091–1097 [Quantum Electron., 45:12 (2015), 1091–1097 ] |
18
|
| 11. |
D. A. Veselov, K. R. Ayusheva, I. S. Shashkin, K. V. Bakhvalov, V. V. Vasil'eva, L. S. Vavilova, A. V. Lyutetskiy, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, I. S. Tarasov, “Optimisation of cavity parameters for lasers based on AlGaInAsP/InP solid solutions (λ=1470 nm)”, Kvantovaya Elektronika, 45:10 (2015), 879–883 [Quantum Electron., 45:10 (2015), 879–883 ] |
2
|
| 12. |
D. A. Veselov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, N. V. Voronkova, I. S. Tarasov, “Study of the absorption coefficient in layers of a semiconductor laser heterostructure”, Kvantovaya Elektronika, 45:7 (2015), 604–606 [Quantum Electron., 45:7 (2015), 604–606 ] |
15
|
| 13. |
D. A. Veselov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, V. A. Kapitonov, I. S. Tarasov, “Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers”, Kvantovaya Elektronika, 45:7 (2015), 597–600 [Quantum Electron., 45:7 (2015), 597–600 ] |
20
|
|
2014 |
| 14. |
D. A. Veselov, V. A. Kapitonov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, I. S. Tarasov, “Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime”, Kvantovaya Elektronika, 44:11 (2014), 993–996 [Quantum Electron., 44:11 (2014), 993–996 ] |
40
|
| 15. |
Z. N. Sokolova, I. S. Tarasov, L. V. Asryan, “Calculation of output characteristics of semiconductor quantum-well lasers with account for both electrons and holes”, Kvantovaya Elektronika, 44:9 (2014), 801–805 [Quantum Electron., 44:9 (2014), 801–805 ] |
3
|
|
2013 |
| 16. |
Z. N. Sokolova, I. S. Tarasov, L. V. Asryan, “Threshold characteristics of semiconductor lasers under conditions of violation of electroneutrality in quantum wells”, Kvantovaya Elektronika, 43:5 (2013), 428–432 [Quantum Electron., 43:5 (2013), 428–432 ] |
2
|
|
1989 |
| 17. |
Z. N. Sokolova, V. B. Khalfin, “Расчеты вероятностей излучательных переходов и времен жизни
в квантово-размерных структурах”, Fizika i Tekhnika Poluprovodnikov, 23:10 (1989), 1806–1812 |
|
1988 |
| 18. |
Z. N. Sokolova, V. B. Khalfin, Al. L. Efros, “Размерное квантование дырок и особенности экситонных спектров
в квантовой яме конечной глубины”, Fizika i Tekhnika Poluprovodnikov, 22:12 (1988), 2124–2130 |
| 19. |
D. Z. Garbuzov, A. V. Tikunov, S. N. Zhigulin, Z. N. Sokolova, V. B. Khalfin, “Влияние насыщения усиления на пороговые характеристики
квантово-размерных InGaAsP/GaAs-гетеролазеров”, Fizika i Tekhnika Poluprovodnikov, 22:6 (1988), 1035–1039 |
|
1986 |
| 20. |
Zh. I. Alferov, D. Z. Garbuzov, K. Yu. Kizhaev, A. B. Nivin, S. A. Nikishin, A. V. Ovchinnikov, Z. N. Sokolova, I. S. Tarasov, A. V. Chudinov, “Low-threshold in $In\,Ga\,As\,P/In\,P$ lasers of divided limitation with $\lambda=1.3$-mu-m and $\lambda =1.55$-mu-m
($I_{\text{threshold}}=600-700\,\text{A/cm}^{2}$)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:4 (1986), 210–215 |
2
|
|
1985 |
| 21. |
I. S. Tarasov, D. Z. Garbuzov, V. P. Evtikhiev, A. V. Ovchinnikov, Z. N. Sokolova, A. V. Chudinov, “Special Features of Temperature Dependence of Thresholds in
InGaAsP/InP DH Lasers (${\lambda=1.3}\, \mu m$) with Separate Limitation
and Thin Active Region”, Fizika i Tekhnika Poluprovodnikov, 19:8 (1985), 1496–1498 |
| 22. |
V. P. Evtikhiev, D. Z. Garbuzov, Z. N. Sokolova, I. S. Tarasov, V. B. Khalfin, V. P. Chalyi, A. V. Chudinov, “Special Features of Threshold Characteristics of InGaAsP/InP DH
Lasers (${\lambda=1.3}\,\mu m$) with Separate
Limitation and Superthin Active
Regions”, Fizika i Tekhnika Poluprovodnikov, 19:8 (1985), 1420–1423 |
| 23. |
D. Z. Garbuzov, V. P. Evtikhiev, S. Yu. Karpov, Z. N. Sokolova, V. B. Khalfin, “Calculation of Threshold Currents for InGaAsP/InP and InGaAsP/GaAs Double-Heterostructure Lasers with Separate Limitation”, Fizika i Tekhnika Poluprovodnikov, 19:3 (1985), 449–455 |
|
1984 |
| 24. |
B. L. Gel'mont, Z. N. Sokolova, V. B. Khalfin, “Межзонная оже-рекомбинация в лазерных структурах на основе GaSb”, Fizika i Tekhnika Poluprovodnikov, 18:10 (1984), 1803–1807 |
| 25. |
D. Z. Garbuzov, V. V. Agaev, Z. N. Sokolova, V. B. Khalfin, V. P. Chalyi, “Recombination Processes in InGaAsP/InP Double Heterostructures
with ${\lambda= 1\div1.5} \mu m$”, Fizika i Tekhnika Poluprovodnikov, 18:6 (1984), 1069–1076 |
|
1983 |
| 26. |
D. Z. Garbuzov, Z. N. Sokolova, V. B. Khalfin, “TIME CALCULATIONS OF AUGER-PROCESSES IN P-INGAASP SOLID-SOLUTIONS”, Zhurnal Tekhnicheskoi Fiziki, 53:2 (1983), 315–319 |
| 27. |
B. L. Gel'mont, Z. N. Sokolova, V. B. Khalfin, “Оже-рекомбинация в вырожденной электронно-дырочной плазме твердых
растворов InGaAsP”, Fizika i Tekhnika Poluprovodnikov, 17:3 (1983), 453–458 |
|
| Organisations |
|
| |
|
|
Contact us: