Z. N. Sokolova, D. A. Veselov, N. A. Pikhtin, I. S. Tarasov, L. V. Asryan, “Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers”, Fizika i Tekhnika Poluprovodnikov, 51:7 (2017), 998–1003; Semiconductors, 51:7 (2017), 959

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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 7, Pages 998–1003
DOI: https://doi.org/10.21883/FTP.2017.07.44661.8522 (Mi phts6118)

This article is cited in 15 scientific papers (total in 15 papers)

Semiconductor physics

Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers

Z. N. Sokolova^a, D. A. Veselov^a, N. A. Pikhtin^a, I. S. Tarasov^a, L. V. Asryan^b

^a Ioffe Institute, St. Petersburg
^b Virginia Polytechnic Institute and State University, Blacksburg, USA

Full-text PDF (197 kB) Citations (15)

DOI: https://doi.org/10.21883/FTP.2017.07.44661.8522

Abstract: The operating characteristics of semiconductor quantum-well lasers, calculated with consideration for an increase in the internal optical loss in the waveguide region with increasing pump current, are presented. The condition of global electroneutrality in the structure is used. This condition consists in that the total charge of electrons in the 2D active region (quantum well) and bulk waveguide region (optical confinement layer) is equal to the total charge of holes in these two regions. Good agreement between the calculated and experimentally determined light–current characteristics is obtained.

Received: 19.01.2017
Accepted: 25.01.2017

English version:
Semiconductors, 2017, Volume 51, Issue 7, Pages 959–964
DOI: https://doi.org/10.1134/S1063782617070326

Bibliographic databases:

Document Type: Article

Language: Russian

Citation: Z. N. Sokolova, D. A. Veselov, N. A. Pikhtin, I. S. Tarasov, L. V. Asryan, “Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers”, Fizika i Tekhnika Poluprovodnikov, 51:7 (2017), 998–1003; Semiconductors, 51:7 (2017), 959–964

Citation in format AMSBIB

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\paper Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers

\jour Fizika i Tekhnika Poluprovodnikov

\yr 2017

\vol 51

\issue 7

\pages 998--1003

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\crossref{https://doi.org/10.21883/FTP.2017.07.44661.8522}

\elib{https://elibrary.ru/item.asp?id=29772376}

\transl

\jour Semiconductors

\yr 2017

\vol 51

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\crossref{https://doi.org/10.1134/S1063782617070326}

Linking options:

https://www.mathnet.ru/eng/phts6118

https://www.mathnet.ru/eng/phts/v51/i7/p998

This publication is cited in the following 15 articles:

Ivan Makhov, Sergey Komarov, Nikita Fominykh, Anna Obraztsova, Veronica Voitovich, Nikolay Derkach, Ivan Melnichenko, Nikita Shandyba, Natalia Chernenko, Maxim Solodovnik, Andrey Lipovskii, Yuri Shernyakov, Nikolay Kalyuzhnyy, Sergey Mintairov, Natalia Kryzhanovskaya, Alexey Zhukov, “Ultra-short stripe microlasers fabricated with a focused ion beam etching technique”, Opt. Lett., 50:2 (2025), 387
A. E. Zhukov, A. M. Nadtochiy, N. V. Kryzhanovskaya, Yu. M. Shernyakov, N. Yu. Gordeev, A. A. Serin, S. A. Mintairov, N. A. Kalyuzhnyy, A. S. Payusov, G. O. Kornyshov, M. V. Maximov, Y. Wang, “Internal Loss in Diode Lasers with Quantum Well-Dots”, Semiconductors, 57:11 (2023), 513
Z. N. Sokolova, N. A Pikhtin, S. O. Slipchenko, L. V. Asryan, “Operating Characteristics of Semiconductor Quantum Well Lasers as Functions of the Waveguide Region Thickness”, Semiconductors, 56:2 (2022), 115
A. A. Afonenko, D. V. Ushakov, A. A. Dubinov, V. Ya. Aleshkin, S. V. Morozov, V. I. Gavrilenko, “Hot phonon effects and Auger recombination on 3 μm room temperature lasing in HgTe-based multiple quantum well diodes”, Journal of Applied Physics, 132:7 (2022)
A. I. Danilov, A. V. Ivanov, V. P. Konyaev, Yu. V. Kurnyavko, M. A. Ladugin, A. V. Lobintsov, A. A. Marmalyuk, S. M. Sapozhnikov, V. A. Simakov, “Semiconductor lasers with improved radiation characteristics”, Quantum Electron., 50:suppl. 4 (2023), S405–S417
S. O. Slipchenko, D. A. Veselov, V. V. Zolotarev, A. V. Lyutetskiy, A. A. Podoskin, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, P. S. Kop'ev, N. A. Pikhtin, “High-power laser diodes based on InGaAs(Р)/Al(In)GaAs(P)/GaAs heterostructures with low internal optical losses”, Quantum Electron., 50:suppl. 4 (2023), S494–S512
N. A. Volkov, T. A. Bagaev, D. R. Sabitov, A. Yu. Andreev, I. V. Yarotskaya, A. A. Padalitsa, M. A. Ladugin, A. A. Marmalyuk, K. V. Bakhvalov, D. A. Veselov, A. V. Lyutetskiy, N. A. Rudova, V. A. Strelets, S. O. Slipchenko, N. A. Pikhtin, “InGaAs/AlGaAs/GaAs semiconductor lasers ( $\lambda$ = 900–920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics”, Quantum Electron., 51:10 (2021), 905–908
A. V. Rozhkov, “On the current dependence of the injection efficiency and the relative contribution of the escape rate and internal optical loss to saturation of the power–current characteristics of high-power pulsed lasers ( $\lambda$ = 1.06 $\mu$ m)”, Semiconductors, 54:8 (2020), 869–876
Olga S. Soboleva, Valentin S. Yuferev, Aleksandr A. Podoskin, Nikita A. Pikhtin, Vasily V. Zolotarev, Vyacheslav S. Golovin, Sergey O. Slipchenko, “Numerical Study of Carrier Transport in n+/n/n+GaAs/AlGaAs Heterostructure at High Current Densities”, IEEE Trans. Electron Devices, 67:2 (2020), 438
D. A. Veselov, Yu. K. Bobretsova, A. Y. Leshko, V. V. Shamakhov, S. O. Slipchenko, N. A. Pikhtin, “Measurements of internal optical loss inside an operating laser diode”, Journal of Applied Physics, 126:21 (2019)
Z.N. Sokolova, N.A. Pikhtin, L.V. Asryan, “Evolution of light‐current characteristic shape in high‐power semiconductor quantum well lasers”, Electron. lett., 55:9 (2019), 550
Yu. K. Bobretsova, D. A. Veselov, A. A. Klimov, L. S. Vavilova, V. V. Shamakhov, S. O. Slipchenko, N. A. Pikhtin, “Ultranarrow-waveguide AlGaAs/GaAs/InGaAs lasers”, Quantum Electron., 49:7 (2019), 661–665
Zinaida N. Sokolova, Nikita A. Pikhtin, Levon V. Asryan, “Two-Valued Characteristics in Semiconductor Quantum Well Lasers”, J. Lightwave Technol., 36:11 (2018), 2295
L. V. Asryan, F. I. Zubov, Yu. S. Balezina (Polubavkina), È. I. Moiseev, M. E. Muretova, N. V. Kryzhanovskaya, M. V. Maksimov, A. E. Zhukov, “Violation of local electroneutrality in the quantum well of a semiconductor laser with asymmetric barrier layers”, Semiconductors, 52:12 (2018), 1621–1629
Z.N. Sokolova, N.A. Pikhtin, L.V. Asryan, 2018 International Conference Laser Optics (ICLO), 2018, 169

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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