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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 5, Pages 679–682
(Mi phts6472)
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This article is cited in 4 scientific papers (total in 4 papers)
Semiconductor physics
Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers
Z. N. Sokolovaa, K. V. Bakhvalova, A. V. Lyutetskiya, N. A. Pikhtina, I. S. Tarasova, L. V. Asryanb a Ioffe Institute, St. Petersburg
b Virginia Polytechnic Institute and State University Blacksburg, USA
Abstract:
Three laser structures with a single strained InGaAs quantum well of different depths and a GaAs or Al$_{0.1}$Ga$_{0.9}$As waveguide region are grown by metal-organic chemical vapor deposition. Using the experimentally determined values of the threshold current density and internal differential quantum efficiency, the velocity of electron capture into the quantum well is calculated for each of these structures. It is found that the capture velocity into deep quantum wells is significantly lower than into shallow ones.
Keywords:
GaAs, Semiconductor Laser, Lasing Threshold, Laser Structure, Threshold Current Density.
Received: 03.11.2015 Accepted: 13.11.2015
Citation:
Z. N. Sokolova, K. V. Bakhvalov, A. V. Lyutetskiy, N. A. Pikhtin, I. S. Tarasov, L. V. Asryan, “Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 679–682; Semiconductors, 50:5 (2016), 667–670
Linking options:
https://www.mathnet.ru/eng/phts6472 https://www.mathnet.ru/eng/phts/v50/i5/p679
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