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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
E. A. Evropeitsev, Yu. M. Serov, D. V. Nechaev, V. N. Jmerik, T. V. Shubina, A. A. Toropov, “Two-dimensional excitons in multiple GaN/AlN monolayer quantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 113:8 (2021), 507–513   ; JETP Letters, 113:8 (2021), 504–509   |
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2020 |
| 2. |
I. A. Eliseyev, V. Yu. Davydov, E. M. Roginskii, Yu. E. Kitaev, A. N. Smirnov, M. A. Yagovkina, D. V. Nechaev, V. N. Zhmerik, M. V. Smirnov, “Structural and dynamical properties of short-period GaN/AlN superlattices: Experiment and theory”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1397 ; Semiconductors, 54:12 (2020), 1706–1709 |
| 3. |
A. V. Myasoedov, D. V. Nechaev, V. V. Ratnikov, A. E. Kalmykov, L. M. Sorokin, V. N. Zhmerik, “An increase of threading dislocations filtering efficiency in AlN/$c$-Al$_{2}$O$_{3}$ templates with faceted surface morphology during a growth by molecular beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020), 26–30 ; Tech. Phys. Lett., 46:6 (2020), 543–547 |
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| 4. |
V. V. Ratnikov, D. V. Nechaev, A. V. Myasoedov, O. A. Koshelev, V. N. Zhmerik, “Decreasing density of grown-in dislocations in AlN/$c$-sapphire templates grown by plasma-activated molecular beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:8 (2020), 36–39 ; Tech. Phys. Lett., 46:4 (2020), 389–392 |
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2019 |
| 5. |
V. Yu. Davydov, V. N. Jmerik, E. M. Roginskii, Yu. E. Kitaev, Y. M. Beltukov, M. B. Smirnov, D. V. Nechaev, A. N. Smirnov, I. A. Eliseyev, P. N. Brunkov, S. V. Ivanov, “Boson peak related to Ga-nanoclusters in AlGaN layers grown by plasma-assisted molecular beam epitaxy at Ga-rich conditions”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1519 ; Semiconductors, 53:11 (2019), 1479–1488 |
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| 6. |
E. V. Lutsenko, N. V. Rzheutskii, A. V. Nagorny, A. V. Danil'chik, D. V. Nechaev, V. N. Zhmerik, S. V. Ivanov, “Stimulated emission, photoluminescence, and localisation of nonequilibrium charge carriers in ultrathin (monolayer) GaN/AlN quantum wells”, Kvantovaya Elektronika, 49:6 (2019), 535–539 [Quantum Electron., 49:6 (2019), 535–539 ] |
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2018 |
| 7. |
A. N. Semenov, D. V. Nechaev, S. I. Troshkov, A. V. Nashchekin, P. N. Brunkov, V. N. Zhmerik, S. V. Ivanov, “Features of the selective growth of GaN nanorods on patterned $c$-sapphire substrates of various configurations”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1663–1667 ; Semiconductors, 52:13 (2018), 1770–1774 |
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| 8. |
V. N. Zhmerik, T. V. Shubina, D. V. Nechaev, A. N. Semenov, D. A. Kirilenko, V. Yu. Davydov, A. N. Smirnov, I. A. Eliseev, G. Posina, S. V. Ivanov, “Site-controlled growth of GaN nanorods with inserted InGaN quantum wells on $\mu$-cone patterned sapphire substrates by plasma-assisted MBE”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 526 ; Semiconductors, 52:5 (2018), 667–670 |
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| 9. |
E. A. Evropeytsev, A. N. Semenov, D. V. Nechaev, V. N. Zhmerik, V. Kh. Kaibyshev, S. I. Troshkov, P. N. Brunkov, A. A. Usikova, S. V. Ivanov, A. A. Toropov, “Metal-semiconductor nanoheterostructures with an AlGaN quantum well and in-situ formed surface Al nanoislands”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 515 ; Semiconductors, 52:5 (2018), 622–624 |
| 10. |
T. A. Komissarova, V. N. Zhmerik, S. V. Ivanov, “Spontaneous formation of indium clusters in InN epilayers grown by molecular-beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018), 42–49 ; Tech. Phys. Lett., 44:2 (2018), 149–152 |
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2017 |
| 11. |
D. V. Nechaev, A. A. Sitnikova, P. N. Brunkov, S. V. Ivanov, V. N. Zhmerik, “Stress generation and relaxation in (Al, Ga)N/6$H$-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:9 (2017), 67–74 ; Tech. Phys. Lett., 43:5 (2017), 443–446 |
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| 12. |
D. S. Zolotukhin, D. V. Nechaev, S. V. Ivanov, V. N. Zhmerik, “Monitoring of elastic stresses with optical system for measuring the substrate curvature in growth of III–N heterostructures by molecular-beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:5 (2017), 60–67 ; Tech. Phys. Lett., 43:3 (2017), 262–266 |
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2016 |
| 13. |
A. A. Toropov, E. A. Shevchenko, T. V. Shubina, V. N. Zhmerik, D. V. Nechaev, G. Pozina, S. V. Ivanov, “AlGaN nanostructures with extremely high quantum yield at 300 K”, Fizika Tverdogo Tela, 58:11 (2016), 2180–2185 ; Phys. Solid State, 58:11 (2016), 2261–2266 |
| 14. |
Ya. V. Kuznetsova, V. N. Zhmerik, D. V. Nechaev, A. M. Kuznetsov, M. V. Zamoryanskaya, “Specific features of the cathodoluminescence spectra of AlInGaN QWs, caused by the influence of phase separation and internal electric fields”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 921–926 ; Semiconductors, 50:7 (2016), 904–909 |
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| 15. |
N. V. Kuznetsova, D. V. Nechaev, N. M. Shmidt, S. Yu. Karpov, N. V. Rzheutskii, V. E. Zemlyakov, V. Kh. Kaibyshev, D. Yu. Kazantsev, S. I. Troshkov, V. I. Egorkin, B. Ya. Ber, E. V. Lutsenko, S. V. Ivanov, V. N. Zhmerik, “Solar-blind Al$_{x}$Ga$_{1-x}$N ($x>$ 0.45) $p$–$i$–$n$ photodiodes with a polarization-$p$-doped emitter”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016), 57–63 ; Tech. Phys. Lett., 42:6 (2016), 635–638 |
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| 16. |
V. V. Ratnikov, D. V. Nechaev, V. N. Zhmerik, S. V. Ivanov, “X-ray diffractometry of AlN/$c$-sapphire templates obtained by plasma-activated molecular beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016), 61–69 ; Tech. Phys. Lett., 42:4 (2016), 419–422 |
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2010 |
| 17. |
G. V. Benemanskaya, V. N. Zhmerik, M. N. Lapushkin, S. N. Timoshnev, “Electronic structure of a Ba/<i>n</i>-AlGaN(0001) interface and the formation of a degenerate 2D electron gas”, Pis'ma v Zh. Èksper. Teoret. Fiz., 91:12 (2010), 739–743 ; JETP Letters, 91:12 (2010), 670–674 |
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