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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 8, Pages 61–69
(Mi pjtf6445)
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This article is cited in 2 scientific papers (total in 2 papers)
X-ray diffractometry of AlN/$c$-sapphire templates obtained by plasma-activated molecular beam epitaxy
V. V. Ratnikov, D. V. Nechaev, V. N. Zhmerik, S. V. Ivanov Ioffe Institute, St. Petersburg
Abstract:
The structure of AlN/$c$-sapphire templates obtained by plasma-activated molecular beam epitaxy (PAMBE) has been studied by X-ray diffractometry techniques. The results show the advantages of using coarse-grained AlN nucleation layers prepared by high-temperature (780$^\circ$C) adatom-migration-enhanced epitaxy. Using 3.5-nm-thick GaN inserts (obtained by three-dimensional growth under N-rich conditions), it is possible to obtain templates with insignificant residual macrostresses and relatively narrow widths (FWHM) of 0002 and 10$\bar1$5 diffraction reflections.
Keywords:
Residual Stress, Technical Physic Letter, Elastic Stress, Seeding Layer, Thread Screw Dislocation.
Received: 26.11.2015
Citation:
V. V. Ratnikov, D. V. Nechaev, V. N. Zhmerik, S. V. Ivanov, “X-ray diffractometry of AlN/$c$-sapphire templates obtained by plasma-activated molecular beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016), 61–69; Tech. Phys. Lett., 42:4 (2016), 419–422
Linking options:
https://www.mathnet.ru/eng/pjtf6445 https://www.mathnet.ru/eng/pjtf/v42/i8/p61
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