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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 7, Pages 921–926
(Mi phts6413)
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This article is cited in 1 scientific paper (total in 1 paper)
Semiconductor structures, low-dimensional systems, quantum phenomena
Specific features of the cathodoluminescence spectra of AlInGaN QWs, caused by the influence of phase separation and internal electric fields
Ya. V. Kuznetsovaa, V. N. Zhmerika, D. V. Nechaeva, A. M. Kuznetsovb, M. V. Zamoryanskayaa a Ioffe Institute, St. Petersburg
b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
Abstract:
The specific features of the cathodoluminescence (CL) spectra in AlInGaN heterostructures, caused by the influence of phase separation and internal electric fields, observed at varied CL excitation density, are studied. It is shown that the evolution of the CL spectrum and the variation in the spectral position of emission lines of nanoscale layers with current density in the primary electron beam makes it possible to identify the occurrence of phase separation in the layer and, in the absence of this separation, to estimate the electric-field strength in the active region of the structure.
Received: 09.12.2015 Accepted: 17.12.2015
Citation:
Ya. V. Kuznetsova, V. N. Zhmerik, D. V. Nechaev, A. M. Kuznetsov, M. V. Zamoryanskaya, “Specific features of the cathodoluminescence spectra of AlInGaN QWs, caused by the influence of phase separation and internal electric fields”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 921–926; Semiconductors, 50:7 (2016), 904–909
Linking options:
https://www.mathnet.ru/eng/phts6413 https://www.mathnet.ru/eng/phts/v50/i7/p921
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Abstract page: | 38 | Full-text PDF : | 8 |
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