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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 44, Issue 4, Pages 42–49
DOI: https://doi.org/10.21883/PJTF.2018.04.45637.17076
(Mi pjtf5880)
 

This article is cited in 1 scientific paper (total in 1 paper)

Spontaneous formation of indium clusters in InN epilayers grown by molecular-beam epitaxy

T. A. Komissarova, V. N. Zhmerik, S. V. Ivanov

Ioffe Institute, St. Petersburg
Full-text PDF (126 kB) Citations (1)
Abstract: We have studied the influence of growth conditions on the number of metallic indium clusters formed spontaneously in indium nitride (InN) layers grown by nitrogen plasma-assisted molecular-beam epitaxy (PAMBE). InN epilayers of N-and In-polarity were grown on c-sapphire substrates and GaN and AlN templates, respectively. N-polar layers were obtained in the standard PAMBE regime, while In-polar layers were grown using a three-stage regime including the stages of epitaxy with enhanced atomic migration and interruption of growth under nitrogen flow. A series of samples were prepared at various growth temperatures and relative In/N flow rates. Measurement of the magnetic-field dependences of the Hall-effect coefficient and its model approximation were used to determine the percentage content of In clusters in various InN layers and the minimum amount of such inclusions that can be achieved by varying the conditions of MBE growth.
Funding agency Grant number
Russian Science Foundation 14-22-00107
Received: 12.10.2017
English version:
Technical Physics Letters, 2018, Volume 44, Issue 2, Pages 149–152
DOI: https://doi.org/10.1134/S1063785018020220
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: T. A. Komissarova, V. N. Zhmerik, S. V. Ivanov, “Spontaneous formation of indium clusters in InN epilayers grown by molecular-beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018), 42–49; Tech. Phys. Lett., 44:2 (2018), 149–152
Citation in format AMSBIB
\Bibitem{KomZhmIva18}
\by T.~A.~Komissarova, V.~N.~Zhmerik, S.~V.~Ivanov
\paper Spontaneous formation of indium clusters in InN epilayers grown by molecular-beam epitaxy
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2018
\vol 44
\issue 4
\pages 42--49
\mathnet{http://mi.mathnet.ru/pjtf5880}
\crossref{https://doi.org/10.21883/PJTF.2018.04.45637.17076}
\elib{https://elibrary.ru/item.asp?id=32740207}
\transl
\jour Tech. Phys. Lett.
\yr 2018
\vol 44
\issue 2
\pages 149--152
\crossref{https://doi.org/10.1134/S1063785018020220}
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  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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