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This article is cited in 10 scientific papers (total in 10 papers)
Monitoring of elastic stresses with optical system for measuring the substrate curvature in growth of III–N heterostructures by molecular-beam epitaxy
D. S. Zolotukhin, D. V. Nechaev, S. V. Ivanov, V. N. Zhmerik Ioffe Institute, St. Petersburg
Abstract:
An original optical system for measuring substrate curvature (OSMSC) is described. The system enables a high-precision analysis of the processes of generation and relaxation of elastic stresses in growth of heterostructures (HSs) based on nitride compounds III–N by plasma-assisted molecular-beam epitaxy (PA-MBE). The application of OSMSC to analyze the growth of GaN/AlN/Si(111) HSs made it possible not only to observe in detail the variation dynamics of elastic stresses in this structure in its metal-enriched growth by low-temperature PA-MBE, but also to develop an HS design eliminating the effect of layer cracking by controlling the compressive stresses.
Received: 28.09.2016
Citation:
D. S. Zolotukhin, D. V. Nechaev, S. V. Ivanov, V. N. Zhmerik, “Monitoring of elastic stresses with optical system for measuring the substrate curvature in growth of III–N heterostructures by molecular-beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:5 (2017), 60–67; Tech. Phys. Lett., 43:3 (2017), 262–266
Linking options:
https://www.mathnet.ru/eng/pjtf5980 https://www.mathnet.ru/eng/pjtf/v43/i5/p60
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