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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
K. A. Mazhukina, V. V. Rumyantsev, A. A. Dubinov, V. V. Utochkin, A. A. Razova, M. A. Fadeev, K. E. Spirin, M. S. Zholudev, N. N. Mikhailov, S. A. Dvoretsky, V. I. Gavrilenko, S. V. Morozov, “Generation of long-wavelength stimulated emission in HgCdTe quantum wells with an increased Auger recombination threshold”, Pis'ma v Zh. Èksper. Teoret. Fiz., 118:5 (2023), 311–316  ; JETP Letters, 118:5 (2023), 309–314 |
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2021 |
| 2. |
V. V. Utochkin, A. A. Dubinov, M. A. Fadeev, V. V. Rumyantsev, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko, S. V. Morozov, “Effect of internal optical losses on the generation of mid-IR stimulated emission in waveguide heterostructures with HgCdTe/CdHgTe quantum wells”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 922–926  ; Semiconductors, 55:12 (2021), 899–902 |
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| 3. |
A. A. Dubinov, V. V. Rumyantsev, M. A. Fadeev, V. V. Utochkin, S. V. Morozov, “Dielectric waveguide optimization for the laser structures with HgTe/CdHgTe QWs emitting in far-infrared range”, Fizika i Tekhnika Poluprovodnikov, 55:5 (2021), 455–459 |
| 4. |
S. V. Morozov, V. V. Utochkin, V. V. Rumyantsev, M. A. Fadeev, A. A. Razova, V. Ya. Aleshkin, V. I. Gavrilenko, N. N. Mikhailov, S. A. Dvoretskii, “Express characterization of the HgCdTe/CdHgTe quantum well waveguide heterostructures with the quasi-relativistic carrier dispersion law by room-temperature photoluminescence spectroscopy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:3 (2021), 51–54 ; Tech. Phys. Lett., 47:2 (2021), 154–157 |
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2020 |
| 5. |
V. V. Utochkin, V. Ya. Aleshkin, A. A. Dubinov, V. I. Gavrilenko, N. S. Kulikov, M. A. Fadeev, V. V. Rumyantsev, N. N. Mikhailov, S. A. Dvoretskii, A. A. Razova, S. V. Morozov, “Continuous-wave stimulated emission in the 10–14-$\mu$m range under optical excitation in HgCdTe/CdHgTe structures with quasirelativistic dispersion”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1169–1173 ; Semiconductors, 54:10 (2020), 1371–1375 |
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| 6. |
L. A. Kushkov, V. V. Utochkin, V. Ya. Aleshkin, A. A. Dubinov, K. E. Kudryavtsev, V. I. Gavrilenko, N. S. Kulikov, M. A. Fadeev, V. V. Rumyantsev, N. N. Mikhailov, S. A. Dvoretskii, A. A. Razova, S. V. Morozov, “Investigation of stimulated emission from HgTe/CdHgTe quantum-well heterostructures in the 3–5 $\mu$m atmospheric transparency window”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1163–1168 ; Semiconductors, 54:10 (2020), 1365–1370 |
| 7. |
V. V. Utochkin, M. A. Fadeev, S. S. Krishtopenko, V. V. Rumyantsev, V. Ya. Aleshkin, A. A. Dubinov, S. V. Morozov, B. R. Semyagin, M. A. Putyato, E. A. Emelyanov, V. V. Preobrazhenskii, V. I. Gavrilenko, “Photoluminescence spectra of InAs/GaInSb/InAs quantum wells in the mid-infrared region”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 929–932 ; Semiconductors, 54:9 (2020), 1119–1122 |
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2019 |
| 8. |
D. V. Kozlov, V. V. Rumyantsev, A. M. Kadykov, M. A. Fadeev, N. S. Kulikov, V. V. Utochkin, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko, H. W. Hubers, F. Teppe, S. V. Morozov, “Features of photoluminescence of double acceptors in HgTe/CdHgTe heterostructures with quantum wells in a terahertz range”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:10 (2019), 679–684 ; JETP Letters, 109:10 (2019), 657–662   |
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| 9. |
S. S. Krishtopenko, S. Ruffenach, F. Gonzalez-Posada, C. Consejo, W. Desrat, B. Jouault, W. Knap, M. A. Fadeev, A. M. Kadykov, V. V. Rumyantsev, S. V. Morozov, G. Boissier, E. Tournié, V. I. Gavrilenko, F. Teppe, “Terahertz spectroscopy of two-dimensional semimetal in three-layer InAs/GaSb/InAs quantum well”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:2 (2019), 91–97 ; JETP Letters, 109:2 (2019), 96–101 |
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| 10. |
V. V. Utochkin, V. Ya. Aleshkin, A. A. Dubinov, V. I. Gavrilenko, N. S. Kulikov, M. A. Fadeev, V. V. Rumyantsev, N. N. Mikhailov, S. A. Dvoretskii, S. V. Morozov, “Study of the auger recombination energy threshold in a series of waveguide heterostructures with HgTe/Cd$_{0.7}$Hg$_{0.3}$Te QWs near 14 $\mu$m”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1178–1181 ; Semiconductors, 53:9 (2019), 1154–1157 |
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| 11. |
M. A. Fadeev, A. A. Dubinov, V. Ya. Aleshkin, V. V. Rumyantsev, V. V. Utochkin, V. I. Gavrilenko, F. Teppe, H.-W. Hübers, N. N. Mikhailov, S. A. Dvoretskii, S. V. Morozov, “Effect of Cd content in barriers on the threshold energy of Auger recombination in waveguide structures with HgTe/Cd<sub>x</sub>Hg<sub>1-x</sub>Te quantum wells, emitting at a wavelength of 18 μm”, Kvantovaya Elektronika, 49:6 (2019), 556–558 [Quantum Electron., 49:6 (2019), 556–558 ] |
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2018 |
| 12. |
V. V. Rumyantsev, N. S. Kulikov, A. M. Kadykov, M. A. Fadeev, A. V. Ikonnikov, A. S. Kazakov, M. S. Zholudev, V. Ya. Aleshkin, V. V. Utochkin, N. N. Mikhailov, S. A. Dvoretskii, S. V. Morozov, V. I. Gavrilenko, “Effect of features of the band spectrum on the characteristics of stimulated emission in narrow-gap heterostructures with HgCdTe quantum wells”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1263–1267 ; Semiconductors, 52:11 (2018), 1375–1379 |
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| 13. |
D. V. Kozlov, V. V. Rumyantsev, S. V. Morozov, A. M. Kadykov, M. A. Fadeev, H.-W. Hübers, V. I. Gavrilenko, “Calculation of multiply charged states of impurity-defect centers in epitaxial Hg$_{1-x}$Cd$_{x}$Te layers”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1257–1262 ; Semiconductors, 52:11 (2018), 1369–1374 |
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| 14. |
V. V. Rumyantsev, L. S. Bovkun, A. M. Kadykov, M. A. Fadeev, A. A. Dubinov, V. Ya. Aleshkin, N. N. Mikhailov, S. A. Dvoretsky, B. Piot, M. Orlita, M. Potemski, F. Teppe, S. V. Morozov, V. I. Gavrilenko, “Magnetooptical studies and stimulated emission in narrow gap HgTe/CdHgTe structures in the very long wavelength infrared range”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 464 ; Semiconductors, 52:4 (2018), 436–441 |
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2017 |
| 15. |
V. V. Rumyantsev, A. M. Kadykov, M. A. Fadeev, A. A. Dubinov, V. V. Utochkin, N. N. Mikhailov, S. A. Dvoretskii, S. V. Morozov, V. I. Gavrilenko, “Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1616–1620 ; Semiconductors, 51:12 (2017), 1557–1561 |
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2016 |
| 16. |
A. N. Akimov, A. E. Klimov, S. V. Morozov, S. P. Suprun, V. S. Epov, A. V. Ikonnikov, M. A. Fadeev, V. V. Rumyantsev, “Giant negative photoconductivity of PbSnTe:In films with wavelength cutoff near 30 $\mu$m”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1713–1719 ; Semiconductors, 50:12 (2016), 1684–1690 |
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| 17. |
D. V. Kozlov, V. V. Rumyantsev, S. V. Morozov, A. M. Kadykov, M. A. Fadeev, V. S. Varavin, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko, F. Teppe, “Mercury vacancies as divalent acceptors in HgTe/Cd$_{x}$Hg$_{1-x}$Te structures with quantum wells”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1690–1696 ; Semiconductors, 50:12 (2016), 1662–1668 |
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| 18. |
V. V. Rumyantsev, M. A. Fadeev, S. V. Morozov, A. A. Dubinov, K. E. Kudryavtsev, A. M. Kadykov, I. V. Tuzov, S. A. Dvoretskii, N. N. Mikhailov, V. I. Gavrilenko, F. Teppe, “Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1679–1684 ; Semiconductors, 50:12 (2016), 1651–1656 |
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